HERF1002G C0G Diode Array Equivalent & Substitute Parts

Part Overview

The HERF1002G C0G is a diode array rectifier manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode design rated for 100 V DC reverse voltage and 10 A average rectified current per diode. The component is packaged in a TO-220-3 Full Pack with isolated tab configuration for through-hole mounting applications. This part is Active in product status with 925 units currently in stock.

Equivalent and substitute parts are identified to address component availability, supply chain continuity, and application-specific performance requirements while maintaining compatibility with the original design specifications.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io) (per Diode)	10 A
Voltage - Forward (Vf) (Max) @ If	1 V @ 10 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50 ns
Current - Reverse Leakage @ Vr	10 µA @ 100 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the HERF1002G C0G are grouped based on the following critical parameters that determine functional compatibility:

Primary Compatibility Criteria:

Diode Configuration: 1 Pair Common Cathode (all substitutes maintain this configuration)
Voltage - DC Reverse (Vr) (Max): 100 V (all substitutes rated for 100 V)
Package / Case: TO-220-3 Full Pack, Isolated Tab (all substitutes use identical package)
Mounting Type: Through Hole (all substitutes are through-hole mounted)

Secondary Selection Parameters:

Current - Average Rectified (Io) (per Diode): Substitutes available at 5 A, 10 A, and 20 A ratings
Voltage - Forward (Vf) (Max) @ If: Varies by technology and current rating
Speed: Fast Recovery (≤ 500ns) or Standard Recovery (> 500ns)
Operating Temperature - Junction: Extended range options available
Technology: Standard or Super Barrier implementations

Substitutes are organized into three current rating categories: 5 A devices (SBR10100CTFP, SBR10U100CTFP), 10 A devices (SBR20A100CTFP, SBR20U100CTFP-G), and 20 A devices (SBR40100CTFP, SBRT40V100CTFP).

Parameter Comparison

Part Number	Manufacturer	Io (per Diode)	Vf (Max) @ If	Speed	Vr (Max)	Tj (Operating)	Technology	Reverse Leakage @ Vr
HERF1002G C0G	Taiwan Semiconductor Corporation	10 A	1 V @ 10 A	Fast Recovery ≤ 500ns	100 V	-55°C ~ 150°C	Standard	10 µA @ 100 V
SBR10100CTFP	Diodes Incorporated	5 A	800 mV @ 5 A	Fast Recovery ≤ 500ns	100 V	-65°C ~ 150°C	Super Barrier	100 µA @ 100 V
SBR10U100CTFP	Diodes Incorporated	5 A	670 mV @ 5 A	Fast Recovery ≤ 500ns	100 V	-65°C ~ 175°C	Super Barrier	200 µA @ 100 V
SBR20A100CTFP	Diodes Incorporated	10 A	750 mV @ 10 A	Fast Recovery ≤ 500ns	100 V	-65°C ~ 175°C	Super Barrier	100 µA @ 100 V
SBR20U100CTFP-G	Diodes Incorporated	10 A	700 mV @ 10 A	Standard Recovery > 500ns	100 V	-65°C ~ 175°C	Super Barrier	500 µA @ 100 V
SBR40100CTFP	Diodes Incorporated	20 A	820 mV @ 20 A	Fast Recovery ≤ 500ns	100 V	-65°C ~ 175°C	Super Barrier	100 µA @ 100 V
SBRT40V100CTFP	Diodes Incorporated	20 A	730 mV @ 20 A	Standard Recovery > 500ns	100 V	-55°C ~ 150°C	Super Barrier	300 µA @ 100 V

Engineering Selection Recommendations

Direct Equivalent (10 A Current Rating):

SBR20A100CTFP is the primary direct equivalent to HERF1002G C0G. Both devices are rated for 10 A average rectified current per diode at 100 V reverse voltage. SBR20A100CTFP features Super Barrier technology with improved forward voltage characteristics (750 mV @ 10 A versus 1 V @ 10 A), extended operating temperature range (-65°C ~ 175°C versus -55°C ~ 150°C), and fast recovery speed matching the original specification. This part is Active in product status with 23,517 units in stock and is ROHS3 compliant.

SBR20U100CTFP-G provides an alternative 10 A rated option with lower forward voltage (700 mV @ 10 A) but operates with standard recovery speed (> 500ns) rather than fast recovery. This part is suitable for applications where recovery speed is not a critical constraint. Operating temperature range extends to -65°C ~ 175°C. Inventory availability is 1,188 units.

Lower Current Rating Alternatives (5 A):

SBR10100CTFP and SBR10U100CTFP are rated for 5 A average rectified current per diode. These devices are suitable for applications requiring lower current handling than the original 10 A specification. SBR10100CTFP maintains fast recovery speed with 800 mV forward voltage at 5 A. SBR10U100CTFP offers improved forward voltage performance (670 mV @ 5 A) with extended temperature range to -65°C ~ 175°C. Both parts are Active in product status with 6,598 and 2,143 units in stock respectively.

Higher Current Rating Alternatives (20 A):

SBR40100CTFP and SBRT40V100CTFP are rated for 20 A average rectified current per diode. These devices provide increased current capacity for applications exceeding the original 10 A specification. SBR40100CTFP features fast recovery speed with 820 mV forward voltage at 20 A and extended temperature range (-65°C ~ 175°C). SBRT40V100CTFP is qualified to AEC-Q101 automotive standard with standard recovery speed and 730 mV forward voltage at 20 A, operating temperature range -55°C ~ 150°C matching the original part. Inventory availability is 1,387 and 2,082 units respectively.

All substitute parts maintain identical package configuration (TO-220-3 Full Pack, Isolated Tab), through-hole mounting type, and ROHS3 compliance with the original HERF1002G C0G specification.

Frequently Asked Questions (FAQ)

Q: Can SBR20A100CTFP directly replace HERF1002G C0G in existing designs?

A: Yes. SBR20A100CTFP is a direct equivalent with matching 10 A current rating, 100 V reverse voltage, identical TO-220-3 package configuration, and through-hole mounting. The Super Barrier technology provides improved forward voltage performance (750 mV @ 10 A versus 1 V @ 10 A) and extended operating temperature range (-65°C ~ 175°C versus -55°C ~ 150°C). Both parts are ROHS3 compliant and Active in product status.

Q: What is the difference between Fast Recovery and Standard Recovery speed options?

A: Fast Recovery (≤ 500ns) devices exhibit shorter reverse recovery time, reducing switching losses and improving efficiency in high-frequency applications. Standard Recovery (> 500ns) devices have longer recovery times and are suitable for lower-frequency or linear applications. HERF1002G C0G specifies Fast Recovery with 50 ns reverse recovery time. SBR20A100CTFP and SBR10100CTFP maintain Fast Recovery specification, while SBR20U100CTFP-G and SBRT40V100CTFP operate with Standard Recovery.

Q: Are 5 A rated devices suitable replacements for 10 A applications?

A: No. SBR10100CTFP and SBR10U100CTFP are rated for 5 A average rectified current per diode, which is insufficient for applications requiring 10 A operation. Using undersized current-rated devices results in thermal stress, reduced component lifetime, and potential circuit failure. These 5 A devices are suitable only for applications with maximum current requirements of 5 A or less.

Q: Can 20 A rated devices be used in place of 10 A rated devices?

A: Yes. SBR40100CTFP and SBRT40V100CTFP are rated for 20 A average rectified current per diode and are electrically compatible with 10 A applications. The higher current rating provides additional thermal margin and component reliability. Package configuration, voltage rating, and mounting type remain identical. Forward voltage characteristics differ slightly (820 mV and 730 mV @ 20 A respectively versus 1 V @ 10 A), which may affect circuit performance in precision applications.

Q: What is the significance of the isolated tab feature in the TO-220-3 package?

A: The isolated tab configuration electrically isolates the mounting tab from the semiconductor die, eliminating the need for an insulating washer when mounting to a heat sink. This simplifies thermal management and reduces assembly complexity. All substitute parts maintain this isolated tab feature, ensuring identical mechanical and thermal interface characteristics.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. HERF1002G C0G specifies 1 V @ 10 A, while SBR20A100CTFP specifies 750 mV @ 10 A. Lower forward voltage reduces power dissipation and heat generation. In precision rectifier circuits or applications with tight voltage regulation requirements, forward voltage differences may require circuit analysis to confirm compatibility. In general power supply applications, the improved efficiency of lower forward voltage devices is beneficial.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (SBR10100CTFP, SBR10U100CTFP, SBR20A100CTFP, SBR20U100CTFP-G, SBR40100CTFP, SBRT40V100CTFP) are ROHS3 compliant, matching the original HERF1002G C0G specification. All parts are also REACH unaffected and classified as EAR99 for export control purposes.

Q: What is the difference between SBR20A100CTFP and SBR20U100CTFP-G?

A: Both devices are rated for 10 A average rectified current at 100 V reverse voltage with identical TO-220-3 packaging. SBR20A100CTFP features Fast Recovery speed (≤ 500ns) with 750 mV forward voltage and 100 µA reverse leakage. SBR20U100CTFP-G operates with Standard Recovery speed (> 500ns), lower forward voltage (700 mV), but higher reverse leakage (500 µA). SBR20A100CTFP is preferred for high-frequency switching applications, while SBR20U100CTFP-G is suitable for linear or lower-frequency rectification.

Q: Is SBRT40V100CTFP suitable for automotive applications?

A: Yes. SBRT40V100CTFP is qualified to AEC-Q101 automotive standard and carries Automotive grade designation. This part is suitable for automotive and industrial applications requiring automotive-level reliability and qualification. The 20 A current rating and 100 V reverse voltage specification exceed the original 10 A HERF1002G C0G requirement, providing additional design margin for automotive thermal and electrical stress conditions.

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