HERAF1008G C0G Equivalent & Substitute Parts

Part Overview

The HERAF1008G C0G is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 10 A average rectified current in a through-hole TO-220-2 package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent alternatives for ongoing design requirements and procurement needs. The part operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with an 80 ns reverse recovery time, making it suitable for standard rectification applications requiring moderate switching speeds.

Substiute Parts

HERAF1008G C0G
Taiwan Semiconductor CorporationIn Stock: 1231HERAF1008G C0G Datasheet
HERAF1008G C0G
Current Part
HERAF1008G
Taiwan Semiconductor CorporationIn Stock: 3353HERAF1008G Datasheet
HERAF1008G
Direct

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 10 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Reverse Recovery Time (trr) 80 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Capacitance @ Vr, F 60 pF @ 4V, 1MHz
Mounting Type Through Hole -
Package / Case TO-220-2 Full Pack -
Operating Temperature - Junction -55 to 150 °C
Technology Standard -
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -

Substitute Part Grouping Explanation

Substitution of the HERAF1008G C0G is determined by electrical and mechanical parameter equivalence within the rectifier diode category. The critical parameters establishing substitution eligibility are:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 60 pF @ 4V, 1MHz
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Operating Temperature - Junction: -55°C to 150°C

Substitute parts must match all specified electrical and mechanical parameters to ensure functional equivalence and direct replacement capability without circuit redesign or thermal management modifications.

Parameter Comparison

Parameter HERAF1008G C0G (Main Part) HERAF1008G (Substitute)
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Category Diodes, Rectifiers Diodes, Rectifiers
Description DIODE GEN PURP 10A ITO220AC DIODE GEN PURP 1KV 10A ITO220AC
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V
Current - Average Rectified (Io) 10 A 10 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A
Reverse Recovery Time (trr) 80 ns 80 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 1000 V
Capacitance @ Vr, F 60 pF @ 4V, 1MHz 60 pF @ 4V, 1MHz
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack
Supplier Device Package ITO-220AC ITO-220AC
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C
Technology Standard Standard
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.10.0080 8541.10.0080
Product Status Discontinued at DiGi Electronics Active
Packaging - Tube
Inventory Availability 1192 Pcs New Original In Stock 3246 Pcs New Original In Stock

Engineering Selection Recommendations

The HERAF1008G substitute part is electrically and mechanically equivalent to the HERAF1008G C0G main part across all specified parameters. Both components are manufactured by Taiwan Semiconductor Corporation and maintain identical electrical characteristics including reverse voltage rating, forward voltage drop, reverse recovery time, and leakage current specifications.

The primary distinction between the two parts is product status and packaging format. The HERAF1008G C0G is discontinued at DiGi Electronics, while the HERAF1008G remains active with higher inventory availability (3246 pieces versus 1192 pieces). The substitute part is supplied in tube packaging rather than the unspecified packaging of the main part.

Both parts satisfy identical compliance requirements: ROHS3 compliance, REACH unaffected status, and EAR99 export classification. Moisture sensitivity level is equivalent at MSL 1 (Unlimited), indicating no special moisture handling requirements during storage or assembly.

For applications currently utilizing the HERAF1008G C0G, direct substitution with the HERAF1008G is supported without circuit modification, thermal redesign, or performance degradation. The active product status and superior inventory availability of the substitute part make it the preferred selection for new procurement and ongoing production requirements.

Frequently Asked Questions (FAQ)

Q: Can the HERAF1008G directly replace the HERAF1008G C0G in existing designs?

A: Yes. Both parts are electrically and mechanically equivalent across all specified parameters including voltage rating (1000 V), current rating (10 A), forward voltage (1.7 V @ 10 A), reverse recovery time (80 ns), and package type (TO-220-2 through-hole). No circuit modifications are required.

Q: What is the difference between the HERAF1008G C0G and HERAF1008G?

A: The parts are electrically identical. The primary differences are product status (discontinued versus active) and packaging format (unspecified versus tube). The HERAF1008G offers superior inventory availability.

Q: Are there any compliance or certification differences between these parts?

A: No. Both parts maintain identical compliance status: ROHS3 compliant, REACH unaffected, EAR99 export classification, and MSL 1 moisture sensitivity level.

Q: What is the operating temperature range for these diodes?

A: The junction operating temperature range is -55°C to 150°C for both parts.

Q: What packaging options are available?

A: The HERAF1008G C0G packaging is unspecified in the provided data. The HERAF1008G substitute is supplied in tube packaging. Both use the TO-220-2 Full Pack case style with ITO-220AC supplier device package designation.

Q: What is the reverse recovery time specification?

A: The reverse recovery time (trr) is 80 ns for both parts, classifying them as fast recovery diodes with recovery time ≤ 500 ns at currents > 200 mA.

Q: Are these parts suitable for high-frequency switching applications?

A: These are standard technology rectifier diodes with 80 ns reverse recovery time. They are classified as fast recovery devices but are designed for general-purpose rectification rather than high-frequency switching applications.

Q: What is the reverse leakage current specification?

A: The reverse leakage current is 10 µA at the maximum reverse voltage rating of 1000 V for both parts.

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