HERAF1007G C0G Equivalent & Substitute Parts

Part Overview

The HERAF1007G C0G is a general-purpose rectifier diode rated for 800 V DC reverse voltage and 10 A average rectified current in a through-hole TO-220-2 package. This component is designed for standard rectification applications requiring fast recovery characteristics with a reverse recovery time of 80 ns. The main part number HERAF1007G C0G is discontinued at DiGi Electronics, necessitating identification of equivalent alternatives to maintain supply chain continuity for active designs and production requirements.

Substiute Parts

HERAF1007G C0G
Taiwan Semiconductor CorporationIn Stock: 711HERAF1007G C0G Datasheet
HERAF1007G C0G
Current Part
HERAF1007G
Taiwan Semiconductor CorporationIn Stock: 2082HERAF1007G Datasheet
HERAF1007G
Direct

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 10 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 10 A V
Reverse Recovery Time (trr) 80 ns
Current - Reverse Leakage @ Vr 10 @ 800 V µA
Capacitance @ Vr, F 60 @ 4V, 1MHz pF
Operating Temperature - Junction -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Technology Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute Part Grouping Explanation

Substitution of the HERAF1007G C0G is determined by electrical and mechanical parameter equivalence across the following critical specifications:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 60 pF @ 4V, 1MHz
  • Operating Temperature - Junction: -55°C to 150°C

Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC

Compliance Parameters:

  • Technology: Standard
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected

Parameter Comparison

Parameter HERAF1007G C0G (Main Part) HERAF1007G (Substitute)
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Category Diodes, Rectifiers Diodes, Rectifiers
Voltage - DC Reverse (Vr) (Max) 800 V 800 V
Current - Average Rectified (Io) 10 A 10 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A
Reverse Recovery Time (trr) 80 ns 80 ns
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 800 V
Capacitance @ Vr, F 60 pF @ 4V, 1MHz 60 pF @ 4V, 1MHz
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack
Supplier Device Package ITO-220AC ITO-220AC
Technology Standard Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Discontinued at DiGi Electronics Active

Engineering Selection Recommendations

The substitute part HERAF1007G (without the C0G suffix) is electrically and mechanically identical to the main part HERAF1007G C0G across all specified parameters. The substitute maintains full compliance with ROHS3 and REACH requirements, with MSL rating of 1 (Unlimited), indicating no moisture sensitivity constraints during storage or handling.

The primary distinction between the main part and substitute is product status: the main part is discontinued at DiGi Electronics, while the substitute part HERAF1007G is active with 2038 pieces in stock. The substitute is supplied in Tube packaging, whereas the main part was supplied in full pack configuration. Both parts are manufactured by Taiwan Semiconductor Corporation and are functionally equivalent for all rectification applications within the specified electrical and thermal operating ranges.

Selection of the substitute part HERAF1007G is appropriate for new designs, production builds, and replacement applications where the 800 V / 10 A fast recovery rectifier diode specification is required in a through-hole TO-220-2 package.

Frequently Asked Questions (FAQ)

Q: Are the HERAF1007G C0G and HERAF1007G electrically identical?

A: Yes. Both parts share identical electrical specifications including 800 V reverse voltage rating, 10 A average rectified current, 1.7 V forward voltage drop at 10 A, 80 ns reverse recovery time, and 10 µA reverse leakage current at 800 V. Operating temperature range, capacitance, and all other electrical parameters are equivalent.

Q: What is the difference between the main part and the substitute?

A: The primary differences are product status and packaging format. The main part HERAF1007G C0G is discontinued at DiGi Electronics and was supplied in full pack configuration. The substitute HERAF1007G is active with higher inventory availability and is supplied in Tube packaging. All electrical, mechanical, and compliance specifications are identical.

Q: Can the HERAF1007G be used as a direct replacement in existing designs?

A: Yes. The HERAF1007G is a direct replacement for HERAF1007G C0G. Both parts use the same TO-220-2 through-hole package (ITO-220AC), have identical pin configurations, and meet the same electrical specifications. No circuit modifications or re-qualification are required.

Q: Are there any compliance or regulatory differences?

A: No. Both parts maintain identical compliance status: ROHS3 Compliant, REACH Unaffected, and MSL rating of 1 (Unlimited). Both are classified under ECCN EAR99 and HTSUS 8541.10.0080.

Q: What is the packaging difference between the main part and substitute?

A: The main part was supplied in full pack configuration, while the substitute HERAF1007G is supplied in Tube packaging. Both packaging formats are standard for through-hole components and do not affect electrical performance or mechanical compatibility.

Q: Is the substitute part suitable for high-temperature applications?

A: Yes. The HERAF1007G operates across the same junction temperature range as the main part: -55°C to 150°C. This range supports both industrial and consumer-grade applications requiring extended thermal operating windows.

Q: What is the reverse recovery time significance?

A: The 80 ns reverse recovery time classifies both parts as fast recovery diodes. This specification is critical for switching applications and high-frequency rectification circuits where minimizing reverse current transients is necessary for circuit stability and efficiency.

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