HER152-AP Equivalent & Substitute Parts

Part Overview

The HER152-AP is a general-purpose rectifier diode rated for 100 V DC reverse voltage and 1.5 A average rectified current in a through-hole DO-15 package. This component is classified as obsolete, indicating that direct procurement from the original manufacturer may be limited or unavailable. Identifying equivalent and substitute parts ensures design continuity and maintains supply chain reliability for applications requiring this diode specification.

Substiute Parts

HER152-AP
Micro Commercial CoIn Stock: 1061HER152-AP Datasheet
HER152-AP
Current Part
1N5392GHB0G
Taiwan Semiconductor CorporationIn Stock: 9601N5392GHB0G Datasheet
1N5392GHB0G
Similar
2A02G A0G
Taiwan Semiconductor CorporationIn Stock: 8172A02G A0G Datasheet
2A02G A0G
Similar

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1.5 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1.5 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 50 pF @ 4 V, 1 MHz
Mounting Type Through Hole
Package / Case DO-204AC, DO-15, Axial
Operating Temperature - Junction -55°C ~ 125°C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the HER152-AP is determined by the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
  • Current - Average Rectified (Io): Must equal or exceed 1.5 A
  • Mounting Type: Through Hole
  • Package / Case: DO-15 or DO-204AC (equivalent packages)
  • RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

  • Operating Temperature Range: Must accommodate application requirements
  • Forward Voltage (Vf): Lower values indicate improved efficiency
  • Reverse Recovery Time (trr): Affects switching performance in high-frequency applications
  • Reverse Leakage Current: Lower values indicate better performance

The substitute parts listed below meet or exceed the primary substitution criteria and maintain electrical and mechanical compatibility with the HER152-AP.

Parameter Comparison

Parameter HER152-AP (Main) 1N5392GHB0G 2A02G A0G
Manufacturer Micro Commercial Co Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Obsolete Active Active
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 1.5 A 1.5 A 2 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1.5 A 1.1 V @ 1.5 A 1.1 V @ 2 A
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io) Standard Recovery > 500 ns, > 200 mA (Io) Standard Recovery > 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 50 ns Not specified Not specified
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 50 pF @ 4 V, 1 MHz 15 pF @ 4 V, 1 MHz 15 pF @ 4 V, 1 MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 150°C -55°C ~ 150°C
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
ECCN EAR99 EAR99 EAR99

Engineering Selection Recommendations

1N5392GHB0G (Taiwan Semiconductor Corporation)

This part provides a direct electrical equivalent to the HER152-AP with identical voltage and current ratings. The 1N5392GHB0G is classified as Active, ensuring ongoing availability and supply chain stability. It carries AEC-Q101 automotive qualification and ROHS3 compliance. The extended operating temperature range (-55°C ~ 150°C) provides additional thermal margin compared to the HER152-AP. Forward voltage is slightly elevated at 1.1 V versus 1 V, representing a 0.1 V increase. Recovery speed transitions from fast recovery (50 ns) to standard recovery (>500 ns), which is acceptable for general-purpose rectification applications not requiring high-frequency switching performance. Capacitance is reduced to 15 pF, which may improve performance in certain circuit topologies.

2A02G A0G (Taiwan Semiconductor Corporation)

This part exceeds the HER152-AP current rating at 2 A versus 1.5 A while maintaining the same 100 V voltage specification. The 2A02G A0G is classified as Active with ROHS3 compliance and extended operating temperature range (-55°C ~ 150°C). This higher current rating provides design margin for applications with potential current transients or future design modifications. Forward voltage and recovery characteristics are equivalent to the 1N5392GHB0G. This part is suitable for applications where increased current capacity is beneficial or where standardization on a single diode type across multiple designs is desired.

Both substitute parts maintain mechanical compatibility through identical through-hole mounting and DO-15 package specifications. Selection between these options depends on whether exact current matching (1N5392GHB0G) or current margin (2A02G A0G) is prioritized for the specific application.

Frequently Asked Questions (FAQ)

Q: Can the 1N5392GHB0G directly replace the HER152-AP?

A: Yes. Both parts share identical voltage (100 V) and current (1.5 A) ratings, identical package type (DO-15), and identical mounting configuration (through-hole axial). Electrical parameters are compatible within normal circuit tolerances.

Q: What is the difference between fast recovery and standard recovery diodes?

A: The HER152-AP features fast recovery with 50 ns reverse recovery time, while the substitute parts feature standard recovery (>500 ns). Fast recovery diodes switch more quickly, reducing switching losses in high-frequency applications. Standard recovery diodes are suitable for line-frequency and low-frequency rectification. For general-purpose 50/60 Hz rectification, standard recovery performance is adequate.

Q: Why is the forward voltage higher in the substitute parts?

A: The 1N5392GHB0G and 2A02G A0G specify 1.1 V forward voltage at rated current compared to 1 V for the HER152-AP. This 0.1 V difference is within normal manufacturing tolerance ranges for rectifier diodes and does not affect circuit functionality in typical applications. Power dissipation increase is minimal in most designs.

Q: Can I use the 2A02G A0G in place of the 1N5392GHB0G?

A: Yes. The 2A02G A0G has identical voltage and package specifications with higher current capacity (2 A versus 1.5 A). This provides additional design margin and is electrically compatible. No circuit modifications are required.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both 1N5392GHB0G and 2A02G A0G are ROHS3 compliant, matching the compliance status of the HER152-AP.

Q: What is the significance of the extended operating temperature range in the substitute parts?

A: The substitute parts operate from -55°C to 150°C compared to -55°C to 125°C for the HER152-AP. This extended upper temperature limit provides additional thermal margin and may improve reliability in applications with elevated ambient temperatures or high-power dissipation environments.

Q: Are there any package differences between the HER152-AP and substitute parts?

A: No. All three parts use the DO-15 package with axial through-hole mounting. Physical dimensions and PCB footprints are identical, allowing direct mechanical substitution without layout modifications.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. The 1N5392GHB0G carries this qualification, indicating it meets stringent reliability and performance requirements for automotive applications. This qualification is not required for general industrial or consumer applications but indicates higher quality assurance standards.

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