HER106G-TP Equivalent & Substitute Parts

Part Overview

The HER106G-TP is a general-purpose rectifier diode rated for 600 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 axial package. Manufactured by Micro Commercial Co, this component features fast recovery characteristics with a reverse recovery time of 75 ns and operates across a junction temperature range of -55°C to 125°C.

The HER106G-TP carries a "Not For New Designs" product status, indicating that this part is no longer recommended for new circuit development. Equivalent and substitute parts with active product status are available to provide continued functionality while supporting current design practices and supply chain reliability.

Substiute Parts

HER106G-TP
Micro Commercial CoIn Stock: 871HER106G-TP Datasheet
HER106G-TP
Current Part
1N4005-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 8721N4005-E3/53 Datasheet
1N4005-E3/53
Similar
1N4937GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 8741N4937GPE-E3/54 Datasheet
1N4937GPE-E3/54
Similar
1N4937RLG
onsemiIn Stock: 43691N4937RLG Datasheet
1N4937RLG
Similar
BA158G A0G
Taiwan Semiconductor CorporationIn Stock: 798BA158G A0G Datasheet
BA158G A0G
Similar
MUR260RLG
onsemiIn Stock: 80405MUR260RLG Datasheet
MUR260RLG
Similar
RGP10JE-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 1064RGP10JE-E3/53 Datasheet
RGP10JE-E3/53
Similar
RGP10JE-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 945RGP10JE-E3/73 Datasheet
RGP10JE-E3/73
Similar
SBYV26C-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8700SBYV26C-E3/73 Datasheet
SBYV26C-E3/73
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A V
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V µA
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55 to 125 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the HER106G-TP is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial equivalent

Performance Characteristics:

  • Speed classification: Fast Recovery (≤ 500ns, > 200mA) or Standard Recovery (> 500ns, > 200mA)
  • Reverse Recovery Time (trr): Specified in nanoseconds
  • Forward Voltage (Vf): Maximum specified at rated current
  • Reverse Leakage Current: 5 µA @ 600 V

Compliance Requirements:

  • RoHS3 Compliance
  • REACH Unaffected status
  • Operating temperature range compatibility

Substitute parts are grouped based on whether they maintain the same voltage and current ratings while offering equivalent or improved performance characteristics. Parts with higher current ratings (2 A) are included as functional upgrades suitable for applications requiring additional current capacity.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] Speed trr [ns] Tj Range [°C] Product Status
HER106G-TP Micro Commercial Co 600 1 1.7 @ 1 A Fast Recovery ≤ 500ns 75 -55 to 125 Not For New Designs
1N4005-E3/53 Vishay General Semiconductor 600 1 1.1 @ 1 A Standard Recovery > 500ns -50 to 150 Active
1N4937GPE-E3/54 Vishay General Semiconductor 600 1 1.2 @ 1 A Fast Recovery ≤ 500ns 200 -65 to 175 Active
1N4937RLG onsemi 600 1 1.2 @ 1 A Fast Recovery ≤ 500ns 300 -65 to 150 Not For New Designs
BA158G A0G Taiwan Semiconductor Corporation 600 1 1.2 @ 1 A Fast Recovery ≤ 500ns 150 -55 to 150 Active
MUR260RLG onsemi 600 2 1.35 @ 2 A Fast Recovery ≤ 500ns 75 -65 to 175 Active
RGP10JE-E3/53 Vishay General Semiconductor 600 1 1.3 @ 1 A Fast Recovery ≤ 500ns 150 -65 to 175 Active
RGP10JE-E3/73 Vishay General Semiconductor 600 1 1.3 @ 1 A Fast Recovery ≤ 500ns 250 -65 to 175 Active
SBYV26C-E3/73 Vishay General Semiconductor 600 1 2.5 @ 1 A Fast Recovery ≤ 500ns 30 -65 to 175 Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, 1 A Rating):

The following parts are recommended as direct replacements for new designs:

  • 1N4937GPE-E3/54 (Vishay): Maintains fast recovery characteristics with 200 ns trr, extended temperature range to 175°C, and active product status. Suitable for applications requiring performance equivalent to HER106G-TP with modern supply chain support.

  • BA158G A0G (Taiwan Semiconductor Corporation): Provides fast recovery performance with 150 ns trr and active status. Operating temperature range extends to 150°C, supporting a broader range of thermal environments.

  • RGP10JE-E3/53 and RGP10JE-E3/73 (Vishay SUPERECTIFIER® series): Both offer fast recovery characteristics with extended temperature range to 175°C and active product status. RGP10JE-E3/53 features 150 ns trr, while RGP10JE-E3/73 provides 250 ns trr for applications with different switching speed requirements.

Secondary Substitute (Higher Current Rating):

  • MUR260RLG (onsemi SWITCHMODE™ series): Rated for 2 A average rectified current at 600 V with 75 ns trr matching the HER106G-TP. This part functions as a current-upgraded substitute for applications requiring additional current capacity while maintaining fast recovery performance and active product status.

Alternative with Standard Recovery:

  • 1N4005-E3/53 (Vishay): Provides 600 V / 1 A rating with standard recovery characteristics (> 500ns). This part is suitable for applications where switching speed is not critical and offers the lowest forward voltage drop (1.1 V @ 1 A) among available substitutes.

All recommended substitutes maintain RoHS3 compliance, REACH unaffected status, and through-hole mounting compatibility with the original HER106G-TP.

Frequently Asked Questions (FAQ)

Q: Can I use a 2 A rated diode as a substitute for the 1 A HER106G-TP?

A: Yes. The MUR260RLG is rated for 2 A average rectified current at 600 V and functions as a direct substitute with upgraded current capacity. Higher current ratings do not create compatibility issues in applications designed for lower current operation. The part maintains the same voltage rating, fast recovery characteristics, and through-hole axial package format.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤ 500 ns and are designed for high-frequency switching applications. Standard recovery diodes have reverse recovery times > 500 ns and are suitable for lower-frequency or linear applications. The HER106G-TP is a fast recovery device with 75 ns trr. Substitutes with fast recovery characteristics (1N4937GPE-E3/54, BA158G A0G, RGP10JE series, SBYV26C-E3/73) maintain this performance. The 1N4005-E3/53 is a standard recovery alternative for applications not requiring fast switching.

Q: Are all substitute parts compatible with the same PCB footprint?

A: All substitute parts listed use through-hole axial mounting in DO-204AL (DO-41) package format, which is mechanically and electrically compatible with the HER106G-TP. Axial lead spacing and hole diameter specifications are standardized across these parts.

Q: Why does the SBYV26C-E3/73 have a higher forward voltage drop than other substitutes?

A: The SBYV26C-E3/73 exhibits a forward voltage of 2.5 V @ 1 A compared to 1.2-1.7 V for other substitutes. This characteristic is inherent to the device design and does not affect functional substitution. Applications sensitive to forward voltage drop should select alternatives with lower Vf ratings (1N4005-E3/53 at 1.1 V or 1N4937GPE-E3/54 at 1.2 V).

Q: What is the significance of the "Not For New Designs" status on the HER106G-TP?

A: This status indicates that the manufacturer has discontinued active support for new circuit development. While existing inventory remains available, all recommended substitutes carry "Active" product status, ensuring ongoing manufacturer support, supply chain availability, and compliance with current standards.

Q: Can I substitute the HER106G-TP with a part rated for lower voltage?

A: No. The HER106G-TP is rated for 600 V DC reverse voltage. Substitutes must maintain this voltage rating or higher. All listed substitutes are rated for 600 V, ensuring equivalent voltage withstand capability.

Q: Which substitute offers the fastest reverse recovery time?

A: The SBYV26C-E3/73 provides the fastest reverse recovery time at 30 ns, followed by the HER106G-TP and MUR260RLG at 75 ns. Faster recovery times reduce switching losses in high-frequency applications. Selection should be based on specific circuit requirements rather than recovery time alone.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, meeting current environmental and regulatory requirements.

Request Quote (Ships tomorrow)