HER103-TP Equivalent & Substitute Parts

Part Overview

The HER103-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 package. This component is classified as obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part operates across a junction temperature range of -55°C to 125°C and complies with RoHS3 standards.

Substiute Parts

HER103-TP
Micro Commercial CoIn Stock: 916HER103-TP Datasheet
HER103-TP
Current Part
EGP10D
Fairchild SemiconductorIn Stock: 1448EGP10D Datasheet
EGP10D
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 mA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Package / Case DO-204AL, DO-41, Axial -
Mounting Type Through Hole -
Operating Temperature - Junction -55 to 125 °C

Substitute Part Grouping Explanation

Substitution of the HER103-TP is determined by matching the following critical electrical and mechanical parameters:

  • Reverse Voltage Rating: 200 V DC maximum
  • Forward Current Rating: 1 A average rectified current
  • Recovery Speed: Fast recovery classification (≤ 500ns, > 200mA)
  • Reverse Recovery Time: 50 ns
  • Package Configuration: DO-41 through-hole axial package
  • Forward Voltage Drop: Maximum 1.1 V at 1 A

The EGP10D from Fairchild Semiconductor satisfies all substitution criteria. Both devices share identical voltage and current ratings, matching recovery characteristics, and compatible through-hole packaging. The EGP10D maintains active product status, ensuring continued availability and supply chain reliability.

Parameter Comparison

Parameter HER103-TP (Micro Commercial Co) EGP10D (Fairchild Semiconductor) Match Status
Voltage - DC Reverse (Vr) (Max) 200 V 200 V Identical
Current - Average Rectified (Io) 1 A 1 A Identical
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 0.95 V @ 1 A Compatible (EGP10D lower)
Speed Classification Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Identical
Reverse Recovery Time (trr) 50 ns 50 ns Identical
Current - Reverse Leakage @ Vr 5 mA @ 200 V 5 µA @ 200 V Compatible (EGP10D lower)
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial Identical
Mounting Type Through Hole Through Hole Identical
Operating Temperature - Junction -55 to 125°C -65 to 150°C Compatible (EGP10D wider range)
Product Status Obsolete Active Substitute is active

Engineering Selection Recommendations

The EGP10D is a direct functional equivalent for the HER103-TP. Selection of the EGP10D is supported by the following factors:

Electrical Equivalence: Both devices share identical reverse voltage ratings (200 V), forward current ratings (1 A), and recovery time specifications (50 ns). The EGP10D exhibits lower forward voltage drop (0.95 V versus 1.1 V) and significantly lower reverse leakage current (5 µA versus 5 mA), representing improved performance characteristics within the same functional class.

Mechanical Compatibility: Both components utilize the DO-41 through-hole axial package, enabling direct board-level substitution without layout modifications.

Product Status and Supply: The EGP10D maintains active product status with established supply channels, whereas the HER103-TP is obsolete. This transition ensures long-term component availability and procurement reliability.

Compliance: Both devices comply with RoHS3 standards and carry identical ECCN and HTSUS classifications, maintaining regulatory consistency.

Frequently Asked Questions (FAQ)

Q: Can the EGP10D replace the HER103-TP in existing designs without circuit modification?

A: Yes. The EGP10D is electrically and mechanically equivalent. Identical voltage and current ratings, matching recovery time specifications, and compatible DO-41 through-hole packaging enable direct substitution. The improved performance characteristics of the EGP10D (lower forward voltage drop and reverse leakage) are beneficial to circuit operation.

Q: What is the primary reason for substituting the HER103-TP?

A: The HER103-TP is classified as obsolete. The EGP10D provides functional equivalence with active product status, ensuring continued availability and supply chain support.

Q: Are there package differences between these devices?

A: No. Both the HER103-TP and EGP10D utilize the DO-41 through-hole axial package configuration. Physical dimensions and lead spacing are compatible for direct board-level replacement.

Q: How do the forward voltage characteristics compare?

A: The EGP10D exhibits a lower maximum forward voltage drop (0.95 V at 1 A) compared to the HER103-TP (1.1 V at 1 A). This represents improved efficiency and reduced power dissipation in the substitute device.

Q: What is the difference in reverse leakage current between these devices?

A: The HER103-TP specifies 5 mA reverse leakage at 200 V, while the EGP10D specifies 5 µA at 200 V. The EGP10D exhibits significantly lower leakage, which is advantageous for applications requiring minimal reverse current.

Q: Do both devices support the same operating temperature range?

A: The EGP10D supports a wider operating temperature range (-65°C to 150°C) compared to the HER103-TP (-55°C to 125°C). This extended range provides additional design flexibility for temperature-sensitive applications.

Q: Are there any compliance or certification differences?

A: Both devices comply with RoHS3 standards and share identical ECCN (EAR99) and HTSUS (8541.10.0080) classifications. No compliance barriers exist for substitution.

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