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HER103G-AP Equivalent & Substitute Parts
Part Overview
The HER103G-AP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 package. This component is classified as "Not For New Designs," indicating it has reached end-of-life status. Organizations using this diode in active production or maintenance applications require qualified substitute components that maintain electrical and mechanical compatibility while offering active product status and continued supply availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1 | V @ 1 A |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 200 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Package / Case | DO-204AL, DO-41, Axial | — |
| Mounting Type | Through Hole | — |
| Operating Temperature - Junction | -55 to 125 | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the HER103G-AP is determined by strict equivalence across the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): 200 V minimum
- Current - Average Rectified (Io): 1 A minimum
- Reverse Recovery Time (trr): 50 ns or faster
- Package / Case: DO-204AL or DO-41 (axial through-hole)
- Mounting Type: Through Hole
- Technology: Standard rectifier diode
Secondary Compatibility Factors:
- Voltage - Forward (Vf) (Max) @ If: 1 V or lower at 1 A
- Current - Reverse Leakage @ Vr: 5 µA or lower at 200 V
- Operating Temperature Range: -55°C minimum to 125°C minimum
- RoHS Compliance: ROHS3 Compliant
Parts meeting all primary criteria and maintaining secondary parameters within specified tolerances are classified as direct substitutes. Parts with extended temperature ranges or automotive qualifications provide enhanced reliability but remain functionally equivalent for standard applications.
Parameter Comparison
| Parameter | HER103G-AP (Main) | UF1DHA0G (Upgrade) | 1N4935GHA0G (Similar) | UF4003-M3/73 (Parametric Equivalent) |
|---|---|---|---|---|
| Manufacturer | Micro Commercial Co | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 1 A | 1 A | 1 A | 1 A |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A | 1 V @ 1 A | 1.2 V @ 1 A | 1 V @ 1 A |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 200 ns | 50 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V | 5 µA @ 200 V | 5 µA @ 200 V | 10 µA @ 200 V |
| Capacitance @ Vr, F | 20 pF @ 4V, 1MHz | 17 pF @ 4V, 1MHz | 10 pF @ 4V, 1MHz | 17 pF @ 4V, 1MHz |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature - Junction | -55 to 125°C | -55 to 150°C | -55 to 150°C | -55 to 125°C |
| Product Status | Not For New Designs | Active | Active | Active |
| Grade | Standard | Automotive | Automotive | Standard |
| Qualification | — | AEC-Q101 | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
UF1DHA0G (Upgrade Substitute)
The UF1DHA0G from Taiwan Semiconductor Corporation is the primary recommended substitute. This component matches all primary electrical parameters of the HER103G-AP while offering active product status. The UF1DHA0G provides identical reverse recovery time (50 ns), forward voltage (1 V @ 1 A), and reverse leakage current (5 µA @ 200 V). Extended operating temperature range (-55°C to 150°C) and AEC-Q101 automotive qualification provide enhanced reliability margins. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) ensure regulatory and environmental compatibility.
1N4935GHA0G (Similar Substitute)
The 1N4935GHA0G from Taiwan Semiconductor Corporation meets all primary substitution criteria with active product status and AEC-Q101 qualification. Forward voltage is slightly elevated at 1.2 V @ 1 A compared to the HER103G-AP specification of 1 V @ 1 A. Reverse recovery time is 200 ns, which exceeds the HER103G-AP specification of 50 ns but remains within the fast recovery classification (≤ 500 ns). This component is suitable for applications where the elevated forward voltage and slower recovery time do not impact circuit performance. Extended operating temperature range (-55°C to 150°C) provides thermal margin.
UF4003-M3/73 (Parametric Equivalent)
The UF4003-M3/73 from Vishay General Semiconductor - Diodes Division provides parametric equivalence with identical reverse recovery time (50 ns) and forward voltage (1 V @ 1 A). Reverse leakage current is specified at 10 µA @ 200 V, which is twice the HER103G-AP specification but remains within acceptable limits for general-purpose rectification. Operating temperature range matches the HER103G-AP (-55°C to 125°C). Active product status and ROHS3 compliance ensure supply continuity and regulatory compliance.
Frequently Asked Questions (FAQ)
Q: Can the UF1DHA0G directly replace the HER103G-AP in existing designs?
A: Yes. The UF1DHA0G maintains identical electrical specifications for voltage rating (200 V), current rating (1 A), forward voltage (1 V @ 1 A), and reverse recovery time (50 ns). Both components use the same through-hole DO-41 package. No circuit modifications are required.
Q: What is the difference between the UF1DHA0G and 1N4935GHA0G?
A: Both are active substitutes with identical voltage and current ratings. The UF1DHA0G has faster reverse recovery time (50 ns vs. 200 ns) and lower forward voltage (1 V vs. 1.2 V @ 1 A). The 1N4935GHA0G is suitable for applications where these performance differences do not affect circuit operation. Both offer extended temperature range (-55°C to 150°C) and AEC-Q101 qualification.
Q: Why is the HER103G-AP marked "Not For New Designs"?
A: This designation indicates the component has reached end-of-life status and the manufacturer no longer recommends its use in new product development. Existing inventory may remain available, but long-term supply cannot be guaranteed. Active substitute components ensure continued availability and supply chain reliability.
Q: Are all substitute parts ROHS3 compliant?
A: Yes. The HER103G-AP and all three substitute components (UF1DHA0G, 1N4935GHA0G, UF4003-M3/73) are ROHS3 compliant. All components are REACH unaffected and classified under ECCN EAR99 and HTSUS 8541.10.0080.
Q: What is the significance of AEC-Q101 qualification?
A: AEC-Q101 is an automotive electronics qualification standard. The UF1DHA0G and 1N4935GHA0G carry this qualification, indicating they meet automotive-grade reliability and performance requirements. This qualification is not required for general-purpose applications but provides additional assurance of component quality and consistency.
Q: Can the UF4003-M3/73 be used in high-reliability applications?
A: The UF4003-M3/73 is a standard-grade component without automotive qualification. It meets all primary electrical specifications and is ROHS3 compliant. For applications requiring automotive-grade reliability, the UF1DHA0G or 1N4935GHA0G are preferred due to AEC-Q101 qualification.
Q: What is the impact of reverse leakage current differences?
A: The HER103G-AP and UF1DHA0G specify 5 µA @ 200 V reverse leakage. The UF4003-M3/73 specifies 10 µA @ 200 V. For general-purpose rectification, both values are acceptable. Applications with stringent leakage requirements should prioritize components with lower reverse leakage specifications.
Q: Are the substitute parts available in the same package?
A: Yes. All substitute components use the DO-204AL (DO-41) axial through-hole package, identical to the HER103G-AP. No PCB modifications or mechanical changes are required for substitution.
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