HER103-AP Equivalent & Substitute Parts

Part Overview

The HER103-AP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The fast recovery characteristic (≤500 ns) and 50 ns reverse recovery time position this diode for applications requiring rapid switching performance in power supply and rectification circuits.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1	V @ 1 A
Speed Classification	Fast Recovery ≤500 ns	-
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	mA @ 200 V
Mounting Type	Through Hole	-
Package / Case	DO-204AL, DO-41, Axial	-
Operating Temperature - Junction	-55 to 125	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the HER103-AP is determined by the following critical parameters:

Mandatory Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Current - Average Rectified (Io): 1 A minimum
Mounting Type: Through Hole
Package / Case: DO-41 or DO-204AL compatible

Performance Considerations:

Speed classification (Fast Recovery vs. Standard Recovery) affects switching applications
Reverse recovery time (trr) influences high-frequency performance
Forward voltage (Vf) impacts power dissipation
Reverse leakage current affects circuit performance in high-impedance applications

Compliance Requirements:

RoHS3 compliance maintained across all substitutes
Operating temperature range must accommodate application requirements

The substitute parts listed below meet or exceed the mandatory electrical and mechanical parameters of the HER103-AP while offering improved availability and active product status.

Parameter Comparison

Parameter	HER103-AP (Main)	1N4003-T	EGP10D	MUR220RLG
Manufacturer	Micro Commercial Co	Diodes Incorporated	Fairchild Semiconductor	onsemi
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V
Current - Average Rectified (Io)	1 A	1 A	1 A	2 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	1 V @ 1 A	950 mV @ 1 A	950 mV @ 2 A
Speed Classification	Fast Recovery ≤500 ns	Standard Recovery >500 ns	Fast Recovery ≤500 ns	Fast Recovery ≤500 ns
Reverse Recovery Time (trr)	50 ns	-	50 ns	35 ns
Current - Reverse Leakage @ Vr	5 mA @ 200 V	5 µA @ 200 V	5 µA @ 200 V	2 µA @ 200 V
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial	DO-204AL, DO-41	DO-204AL, DO-41, Axial
Operating Temperature - Junction	-55 to 125 °C	-65 to 150 °C	-65 to 150 °C	-65 to 175 °C
Product Status	Obsolete	Last Time Buy	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-	ROHS3 Compliant

Engineering Selection Recommendations

1N4003-T (Diodes Incorporated)

The 1N4003-T is a direct electrical equivalent with identical voltage and current ratings. This part carries Last Time Buy status, indicating limited future availability. The primary distinction is speed classification: the 1N4003-T operates as a standard recovery diode (>500 ns) compared to the HER103-AP fast recovery specification. This substitution is suitable for applications where switching speed is not a critical performance factor. The 1N4003-T offers improved reverse leakage characteristics (5 µA vs. 5 mA) and an extended operating temperature range (-65 to 150 °C). RoHS3 compliance is maintained.

EGP10D (Fairchild Semiconductor)

The EGP10D is an active product offering identical voltage and current ratings with fast recovery performance matching the HER103-AP specification (≤500 ns, 50 ns trr). This part provides superior forward voltage characteristics (950 mV vs. 1.1 V) and improved reverse leakage (5 µA vs. 5 mA), resulting in lower power dissipation. The extended operating temperature range (-65 to 150 °C) accommodates broader application requirements. Active product status ensures long-term availability. The EGP10D is the preferred substitute for applications requiring fast recovery performance with minimal design modification.

MUR220RLG (onsemi)

The MUR220RLG exceeds the HER103-AP specifications with a 2 A current rating (vs. 1 A) while maintaining the 200 V voltage rating. This part is classified as active with the highest operating temperature range (-65 to 175 °C). Fast recovery performance (≤500 ns, 35 ns trr) and superior reverse leakage (2 µA) provide enhanced switching characteristics. The increased current rating permits use in higher-power applications without derating. RoHS3 compliance is maintained. This substitution is appropriate when design margins or future current requirements justify the higher-rated component.

Frequently Asked Questions (FAQ)

Q: Can the 1N4003-T directly replace the HER103-AP in all applications?

A: The 1N4003-T meets the voltage and current requirements for direct substitution in applications where switching speed is not performance-critical. However, the standard recovery classification (>500 ns) differs from the HER103-AP fast recovery specification (≤500 ns). Applications requiring rapid diode turn-off, such as high-frequency switching power supplies, should use EGP10D or MUR220RLG instead.

Q: What is the significance of reverse recovery time (trr)?

A: Reverse recovery time determines how quickly a diode transitions from conducting to blocking state. Lower trr values (HER103-AP: 50 ns, EGP10D: 50 ns, MUR220RLG: 35 ns) reduce switching losses and electromagnetic interference in high-frequency circuits. The 1N4003-T does not specify trr, indicating standard recovery performance unsuitable for fast-switching applications.

Q: Is the MUR220RLG suitable as a substitute despite its 2 A rating?

A: Yes. The MUR220RLG exceeds the HER103-AP current specification (2 A vs. 1 A) while maintaining the 200 V voltage rating. Higher-rated components operate within safe margins when used in lower-current applications. This substitution is valid and provides improved performance characteristics including faster recovery time (35 ns) and lower reverse leakage (2 µA).

Q: What is the difference between reverse leakage current specifications (mA vs. µA)?

A: The HER103-AP specifies 5 mA reverse leakage at 200 V, while substitute parts specify 5 µA or 2 µA. This 1000-fold difference indicates significantly improved leakage characteristics in modern components. Lower reverse leakage reduces standby power consumption and improves circuit performance in high-impedance applications.

Q: Are all substitute parts available in DO-41 packaging?

A: The 1N4003-T, EGP10D, and MUR220RLG are all available in DO-41 through-hole packaging, ensuring mechanical and electrical compatibility with existing PCB layouts. Verify supplier device package specifications during procurement to confirm DO-41 availability.

Q: Do all substitute parts maintain RoHS3 compliance?

A: The 1N4003-T and MUR220RLG explicitly maintain RoHS3 compliance. The EGP10D compliance status is not specified in the provided data. Verify RoHS3 certification with the supplier before final component selection if regulatory compliance is required.

Q: What is the operating temperature range consideration for substitution?

A: The HER103-AP operates from -55 to 125 °C. All substitute parts extend this range to -65 to 150 °C (1N4003-T, EGP10D) or -65 to 175 °C (MUR220RLG). Extended temperature ranges provide design margin for applications in extreme environments but do not restrict use in standard temperature applications.

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