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HER102-TP Equivalent & Substitute Parts
Part Overview
The HER102-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges to ensure functional equivalence in circuit applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 | V @ 1 A |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | mA @ 100 V |
| Capacitance @ Vr, F | 20 | pF @ 4V, 1MHz |
| Mounting Type | Through Hole | - |
| Package / Case | DO-204AL, DO-41, Axial | - |
| Operating Temperature - Junction | -55 to 125 | °C |
| Technology | Standard | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitute parts for the HER102-TP are selected based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:
Electrical Parameters:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
- Current - Average Rectified (Io): Must equal or exceed 1 A
- Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.1 V @ 1 A
- Reverse Recovery Time (trr): Must not exceed 50 ns for fast recovery classification
- Current - Reverse Leakage @ Vr: Must not exceed 5 mA @ 100 V
- Capacitance @ Vr, F: Must not exceed 20 pF @ 4V, 1MHz
Mechanical Parameters:
- Mounting Type: Through Hole (required)
- Package / Case: DO-204AL, DO-41, or Axial (required)
- Operating Temperature - Junction: Must accommodate -55°C to 125°C range
Compliance Parameters:
- RoHS Status: ROHS3 Compliant (required)
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
Identified substitute parts meet these criteria and are classified as active products with current manufacturing status.
Parameter Comparison
| Parameter | HER102-TP | 1N4002E-E3/53 | UF4002 R1G |
|---|---|---|---|
| Manufacturer | Micro Commercial Co | Vishay General Semiconductor - Diodes Division | Taiwan Semiconductor Corporation |
| Product Status | Obsolete | Active | Active |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 1 A | 1 A | 1 A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A | 1.1 V @ 1 A | 1 V @ 1 A |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns | Not specified | 50 ns |
| Current - Reverse Leakage @ Vr | 5 mA @ 100 V | 5 µA @ 100 V | 5 µA @ 100 V |
| Capacitance @ Vr, F | 20 pF @ 4V, 1MHz | 15 pF @ 4V, 1MHz | 17 pF @ 4V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Operating Temperature - Junction | -55°C to 125°C | -50°C to 150°C | -55°C to 150°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
1N4002E-E3/53 (Vishay General Semiconductor - Diodes Division)
This substitute is an active product with ROHS3 compliance and unlimited moisture sensitivity rating. The part meets all electrical specifications with equivalent voltage and current ratings. The reverse leakage current is 5 µA @ 100 V, which is lower than the HER102-TP specification of 5 mA @ 100 V. Operating temperature range extends to 150°C, exceeding the original part's upper limit. The primary distinction is standard recovery speed classification (>500ns) compared to the HER102-TP fast recovery classification (≤500ns). This part is suitable for applications where standard recovery characteristics are acceptable.
UF4002 R1G (Taiwan Semiconductor Corporation)
This substitute is an active product with ROHS3 compliance and unlimited moisture sensitivity rating. The part maintains fast recovery speed classification (≤500ns) with 50 ns reverse recovery time, matching the HER102-TP specification. Forward voltage is 1 V @ 1 A, which is lower than the HER102-TP maximum of 1.1 V @ 1 A. Reverse leakage current is 5 µA @ 100 V, lower than the original specification. Operating temperature range extends to 150°C. This part provides electrical characteristics equivalent to or better than the HER102-TP across all specified parameters.
Both substitute parts are available in active production status with current inventory levels and meet all mandatory compliance requirements.
Frequently Asked Questions (FAQ)
Q: Can the 1N4002E-E3/53 be used as a direct replacement for the HER102-TP?
A: The 1N4002E-E3/53 meets all electrical and mechanical specifications for the HER102-TP. The primary difference is speed classification: the substitute operates at standard recovery speed (>500ns) while the original is fast recovery (≤500ns). Selection depends on circuit timing requirements. Both parts are DO-41 through-hole packages with identical voltage and current ratings.
Q: What is the difference between fast recovery and standard recovery diodes?
A: Recovery speed refers to the time required for a diode to transition from conducting to blocking state. Fast recovery diodes (≤500ns) are suitable for high-frequency switching applications. Standard recovery diodes (>500ns) are appropriate for lower-frequency rectification. The HER102-TP and UF4002 R1G both specify fast recovery characteristics, while the 1N4002E-E3/53 specifies standard recovery.
Q: Are the substitute parts compatible with the original PCB layout?
A: Both substitute parts use DO-41 through-hole axial packaging, identical to the HER102-TP. Physical dimensions and lead spacing are compatible with existing through-hole PCB designs. No layout modifications are required.
Q: What does the reverse leakage current difference mean for circuit operation?
A: The HER102-TP specifies 5 mA @ 100 V reverse leakage, while both substitutes specify 5 µA @ 100 V. Lower reverse leakage current reduces parasitic current draw in blocking state. This difference is beneficial for applications requiring minimal leakage, such as precision rectification or high-impedance circuits.
Q: Are both substitute parts RoHS compliant?
A: Both the 1N4002E-E3/53 and UF4002 R1G are ROHS3 compliant with moisture sensitivity level 1 (unlimited). They meet all environmental and regulatory requirements equivalent to the HER102-TP.
Q: Which substitute should be selected for new designs?
A: Selection between the two substitutes depends on application requirements. For fast recovery applications requiring ≤500ns switching speed, the UF4002 R1G is appropriate. For standard rectification applications where recovery speed exceeds 500ns, the 1N4002E-E3/53 is suitable. Both parts are active products with established supply chains.
Q: Can forward voltage differences affect circuit performance?
A: The HER102-TP specifies 1.1 V @ 1 A forward voltage. The 1N4002E-E3/53 matches this specification at 1.1 V @ 1 A. The UF4002 R1G specifies 1 V @ 1 A, which is lower. In rectification circuits, lower forward voltage reduces power dissipation and heat generation. This difference is generally beneficial but should be verified against specific circuit design margins.
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