HER102G-AP Equivalent & Substitute Parts

Part Overview

The HER102G-AP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole axial package. This component is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Applications requiring this diode specification necessitate identification of equivalent substitute parts that maintain electrical and mechanical compatibility while offering active product status or improved performance characteristics.

Substiute Parts

HER102G-AP
Micro Commercial CoIn Stock: 1208HER102G-AP Datasheet
HER102G-AP
Current Part
MUR110G
onsemiIn Stock: 5036MUR110G Datasheet
MUR110G
Similar
SF12G A0G
Taiwan Semiconductor CorporationIn Stock: 1132SF12G A0G Datasheet
SF12G A0G
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55 to 125 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the HER102G-AP are qualified based on the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial compatible
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Secondary Compatibility Factors:

  • Operating Temperature Range: Must encompass or exceed the application's required junction temperature range
  • RoHS and REACH Compliance: Regulatory alignment with original part specifications
  • Reverse Recovery Time (trr): Lower values indicate improved switching performance

Substitute parts identified in this reference maintain electrical equivalence within the specified parameter ranges and physical compatibility with DO-41 axial through-hole mounting footprints.

Parameter Comparison

Parameter HER102G-AP (Micro Commercial Co) MUR110G (onsemi) SF12G A0G (Taiwan Semiconductor Corporation)
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 1 A 1 A 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 875 mV @ 1 A 950 mV @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V 2 µA @ 100 V 5 µA @ 100 V
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Operating Temperature - Junction -55 to 125 °C -65 to 175 °C -55 to 150 °C
Product Status Not For New Designs Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

MUR110G (onsemi) is an active product offering improved electrical performance characteristics. The MUR110G demonstrates lower forward voltage drop (875 mV versus 1 V) and faster reverse recovery time (35 ns versus 50 ns), resulting in reduced power dissipation and improved switching efficiency. Extended operating temperature range (-65 to 175 °C) provides thermal margin for demanding applications. Active product status ensures long-term availability and supply chain continuity. ROHS3 compliance and REACH unaffected status align with regulatory requirements.

SF12G A0G (Taiwan Semiconductor Corporation) maintains electrical equivalence with the original HER102G-AP specification. Forward voltage (950 mV) and reverse leakage current (5 µA) closely match the original part. Operating temperature range (-55 to 150 °C) extends the upper limit by 25 °C. Active product status and ROHS3 compliance support new design implementation. Capacitance specification (20 pF @ 4 V, 1 MHz) matches the original part, supporting applications with specific frequency-dependent requirements.

Both substitute parts satisfy the primary substitution criteria and maintain physical compatibility with existing DO-41 axial through-hole circuit board layouts.

Frequently Asked Questions (FAQ)

Q: Can MUR110G replace HER102G-AP in existing designs?

A: Yes. MUR110G meets all primary electrical specifications (100 V reverse voltage, 1 A average rectified current) and physical compatibility requirements (DO-41 axial through-hole package). The substitute offers improved performance with lower forward voltage drop and faster reverse recovery time. Active product status ensures continued availability.

Q: What is the difference between the two substitute parts?

A: Both MUR110G and SF12G A0G satisfy electrical equivalence. MUR110G offers superior switching performance (35 ns reverse recovery time versus 50 ns original specification) and extended temperature range (-65 to 175 °C). SF12G A0G maintains closer electrical alignment with the original part, including identical reverse leakage current (5 µA) and capacitance specification (20 pF @ 4 V, 1 MHz).

Q: Are package dimensions identical between HER102G-AP and substitute parts?

A: All three parts use DO-204AL, DO-41, or Axial package designations, indicating physical compatibility with standard through-hole axial diode footprints. Mechanical dimensions conform to industry-standard specifications for this package category.

Q: Do substitute parts meet regulatory compliance requirements?

A: Yes. Both MUR110G and SF12G A0G are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original HER102G-AP.

Q: Why is HER102G-AP marked "Not For New Designs"?

A: This designation indicates the part has been superseded in the manufacturer's product line. New circuit designs should incorporate active substitute parts such as MUR110G or SF12G A0G to ensure long-term supply availability and access to manufacturer technical support.

Q: What is reverse recovery time and why does it matter?

A: Reverse recovery time (trr) is the interval required for a diode to transition from forward conduction to reverse blocking state. Lower values reduce switching losses and electromagnetic interference in high-frequency applications. MUR110G and SF12G A0G both provide 35 ns recovery time, improving upon the original 50 ns specification.

Q: Can these diodes be used interchangeably in high-temperature applications?

A: MUR110G supports operation to 175 °C junction temperature, exceeding both the original HER102G-AP (125 °C) and SF12G A0G (150 °C). Selection depends on specific application temperature requirements. Verify thermal management design accommodates the selected part's maximum junction temperature rating.

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