HER1002G C0G Equivalent & Substitute Parts

Part Overview

The HER1002G C0G is a diode array rectifier manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode design with 100 V reverse voltage rating and 10 A average rectified current per diode. The device is packaged in TO-220-3 through-hole configuration and is currently in active product status with 1107 units in stock.

Substitute parts are necessary when the HER1002G C0G reaches end-of-life status, when supply constraints occur, or when design requirements call for enhanced performance characteristics such as improved forward voltage characteristics, faster recovery times, or higher current ratings within the same voltage class and package footprint.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io) (per Diode)	10	A
Voltage - Forward (Vf) (Max) @ If	1 V @ 5 A	V @ A
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Operating Temperature - Junction	-55 to 150	°C
Diode Configuration	1 Pair Common Cathode	—
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the HER1002G C0G is determined by strict adherence to the following parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V
Diode Configuration: 1 Pair Common Cathode
Package / Case: TO-220-3
Mounting Type: Through Hole

Compatible Variation Parameters:

Current - Average Rectified (Io) (per Diode): Equal to or greater than 10 A
Voltage - Forward (Vf) (Max) @ If: Equal to or less than the specified rating
Reverse Recovery Time (trr): Equal to or less than 50 ns (for fast recovery devices)
Operating Temperature - Junction: Range must encompass or exceed -55°C to 150°C
Technology: Standard or Super Barrier acceptable
RoHS Status: ROHS3 Compliant required

Substitute parts identified in this reference meet all mandatory matching parameters and maintain electrical compatibility within the specified voltage and current classes.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) V	Io (per Diode) A	Vf (Max) @ If	trr (ns)	Ir @ Vr (µA)	Tj (°C)	Technology	Product Status
HER1002G C0G	Taiwan Semiconductor Corporation	100	10	1 V @ 5 A	50	10 @ 100 V	-55 to 150	Standard	Active
BYV32-100-E3/45	Vishay General Semiconductor - Diodes Division	100	18	1.15 V @ 20 A	25	10 @ 100 V	-65 to 150	Standard	Active
SBR10U100CT	Diodes Incorporated	100	5	670 mV @ 5 A	≤500	200 @ 100 V	-65 to 175	Super Barrier	Active
SBR20E100CT	Diodes Incorporated	100	10	790 mV @ 10 A	>500	90 @ 100 V	-65 to 175	Super Barrier	Active
SBR20U100CT	Diodes Incorporated	100	10	700 mV @ 10 A	≤500	500 @ 100 V	-65 to 175	Super Barrier	Active
SBR30A100CT	Diodes Incorporated	100	15	800 mV @ 15 A	≤500	100 @ 100 V	-65 to 175	Super Barrier	Active
SBR40100CT	Diodes Incorporated	100	20	820 mV @ 20 A	≤500	100 @ 100 V	-65 to 175	Super Barrier	Active
SBR60A100CT	Diodes Incorporated	100	30	840 mV @ 30 A	≤500	500 @ 100 V	-55 to 175	Super Barrier	Active

Engineering Selection Recommendations

Direct Equivalent (Matched Current Rating):

SBR20U100CT and SBR20E100CT are functionally equivalent to the HER1002G C0G with identical 10 A current ratings and 100 V reverse voltage. Both devices are manufactured by Diodes Incorporated and maintain active product status. SBR20U100CT offers superior forward voltage characteristics (700 mV @ 10 A) and fast recovery performance (≤500 ns), while SBR20E100CT provides standard recovery characteristics (>500 ns). Both are ROHS3 compliant with extended operating temperature ranges (-65°C to 175°C).

Higher Current Capacity Substitutes:

BYV32-100-E3/45 (18 A), SBR30A100CT (15 A), SBR40100CT (20 A), and SBR60A100CT (30 A) provide increased current handling capability while maintaining 100 V reverse voltage rating and TO-220-3 package compatibility. These devices are suitable for applications requiring design margin or future current demand increases. All are in active product status and ROHS3 compliant.

Lower Current Substitute:

SBR10U100CT (5 A) is available for applications with reduced current requirements. This device features the lowest forward voltage drop (670 mV @ 5 A) among all listed substitutes and maintains fast recovery characteristics.

Compliance Considerations:

All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the environmental compliance profile of the HER1002G C0G. SBR30100CT is marked as obsolete and REACH affected; this part is not recommended for new designs.

Frequently Asked Questions (FAQ)

Q: Can SBR20U100CT directly replace HER1002G C0G in existing designs?

A: Yes. SBR20U100CT maintains identical 100 V reverse voltage, 10 A current rating, 1 Pair Common Cathode configuration, and TO-220-3 package. The device is pin-compatible and electrically compatible for direct substitution. Forward voltage is lower (700 mV vs. 1 V @ 5 A), and recovery time is faster (≤500 ns), both favorable characteristics.

Q: What is the difference between Standard and Super Barrier technology in these diode arrays?

A: Technology designation is provided in the input parameters. Standard technology is used in HER1002G C0G and BYV32-100-E3/45. Super Barrier technology is used in all Diodes Incorporated SBR series parts. Both technologies meet the 100 V reverse voltage and TO-220-3 package requirements specified for substitution.

Q: Can I use a higher current-rated device such as SBR40100CT (20 A) in place of HER1002G C0G (10 A)?

A: Yes. Higher current-rated devices maintain all mandatory matching parameters: 100 V reverse voltage, 1 Pair Common Cathode configuration, and TO-220-3 package. The higher current rating provides design margin and does not create incompatibility. Forward voltage and recovery characteristics remain within acceptable ranges for 100 V rectifier applications.

Q: Are all listed substitutes available in the same packaging format?

A: All substitute parts use TO-220-3 through-hole package and are compatible with existing PCB layouts designed for HER1002G C0G. Packaging format (Tube or other supplier designation) does not affect electrical or mechanical compatibility.

Q: What is the operating temperature range difference between HER1002G C0G and substitute parts?

A: HER1002G C0G operates from -55°C to 150°C. Most Diodes Incorporated substitutes (SBR series) operate from -65°C to 175°C, providing extended low-temperature and high-temperature capability. BYV32-100-E3/45 operates from -65°C to 150°C. Extended temperature ranges do not create incompatibility; they provide additional design flexibility.

Q: Why is SBR30100CT not recommended despite being listed in the input data?

A: SBR30100CT is marked as obsolete product status and REACH affected. Current design practices favor active, REACH unaffected parts such as SBR30A100CT, which provides identical electrical specifications with active product status and full REACH compliance.

Q: What forward voltage characteristics should I consider when selecting a substitute?

A: Forward voltage is provided in the parameter comparison table for each device at specified current levels. Lower forward voltage reduces power dissipation and heat generation. SBR10U100CT offers the lowest forward voltage (670 mV @ 5 A), while SBR60A100CT offers moderate forward voltage (840 mV @ 30 A) at higher current levels. Selection depends on thermal design requirements and available heatsinking.

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