HAT2299WP-EL-E Equivalent & Substitute Parts

Part Overview

The HAT2299WP-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 150V drain-to-source voltage with 14A continuous drain current at 25°C ambient temperature. This device is designed for surface mount applications in the 8-WPAK (3) package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal and spatial constraints. The primary substitute identified for this device is the FDMC86244 from onsemi, which shares the same voltage rating and similar power dissipation characteristics.

Substiute Parts

HAT2299WP-EL-E

Renesas Electronics CorporationIn Stock: 2609HAT2299WP-EL-E Datasheet

Current PartRFQ

FDMC86244

onsemiIn Stock: 35300FDMC86244 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the HAT2299WP-EL-E is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same or higher Drain-to-Source Voltage (Vdss) rating of 150V to ensure safe operation in the target application.

Current Handling Capability: The substitute must support continuous drain current sufficient for the application. The HAT2299WP-EL-E is rated for 14A at 25°C ambient temperature.

On-Resistance (Rds On): The on-resistance directly affects power dissipation and thermal performance. The HAT2299WP-EL-E specifies 110mOhm at 7A and 10V gate-source voltage.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. The HAT2299WP-EL-E specifies 15nC at 10V.

Power Dissipation Rating: The device must support the thermal load of the application. The HAT2299WP-EL-E is rated for 25W at case temperature (Tc).

Package and Mounting: Surface mount compatibility and package footprint must align with PCB design constraints.

Compliance and Certifications: RoHS3 compliance and REACH status must be maintained for regulatory requirements.

The FDMC86244 qualifies as a substitute based on matching voltage rating (150V Vdss), surface mount configuration, RoHS3 compliance, and comparable power dissipation capability (26W at Tc).

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FDMC86244 (onsemi)

The FDMC86244 is an Active product with full RoHS3 compliance and REACH Unaffected status, matching the regulatory requirements of the HAT2299WP-EL-E. Both devices share identical Drain-to-Source Voltage ratings (150V) and comparable power dissipation capabilities (25W vs. 26W at case temperature).

The FDMC86244 features a lower gate charge (5.9nC versus 15nC), which results in faster switching characteristics and reduced driver power requirements. The on-resistance specification of 134mOhm at 2.8A, 10V is slightly higher than the HAT2299WP-EL-E at 110mOhm, representing a 22% increase in conduction losses under equivalent gate drive conditions.

The continuous drain current rating differs between devices: the HAT2299WP-EL-E supports 14A at 25°C ambient, while the FDMC86244 supports 9.4A at case temperature. This difference requires evaluation against the specific application's current requirements and thermal management strategy.

Both devices employ surface mount technology in 8-PowerWDFN packages and maintain unlimited moisture sensitivity levels (MSL 1), supporting standard PCB assembly processes without special handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDMC86244 directly replace the HAT2299WP-EL-E in all applications?

A: Direct replacement is possible only when the application's continuous drain current requirement does not exceed 9.4A at case temperature. The HAT2299WP-EL-E is rated for 14A at 25°C ambient, providing higher current capacity. Applications requiring the full 14A rating must retain the original part or identify alternative substitutes with equivalent current specifications.

Q: What is the significance of the on-resistance difference between these devices?

A: The HAT2299WP-EL-E specifies 110mOhm at 7A and 10V gate-source voltage, while the FDMC86244 specifies 134mOhm at 2.8A and 10V. On-resistance directly determines conduction losses and heat generation. The 22% higher on-resistance in the FDMC86244 results in proportionally higher power dissipation at equivalent current levels, affecting thermal design and potentially requiring enhanced heat sinking.

Q: Are the package footprints identical between these devices?

A: Both devices use the 8-PowerWDFN package type and are classified as surface mount components. However, the FDMC86244 is specified as 8-MLP (3.3x3.3) while the HAT2299WP-EL-E uses 8-WPAK (3). Physical dimensions and pin layouts must be verified against manufacturer datasheets before PCB redesign is undertaken.

Q: What are the gate-source voltage differences, and do they affect circuit design?

A: The HAT2299WP-EL-E supports ±30V gate-source voltage, while the FDMC86244 supports ±20V. Applications utilizing gate drive voltages above ±20V require the HAT2299WP-EL-E. Standard gate drive circuits operating at ±10V or ±15V are compatible with both devices.

Q: How does the gate charge difference impact switching performance?

A: The FDMC86244 exhibits significantly lower gate charge (5.9nC versus 15nC at 10V), resulting in faster switching transitions and reduced energy dissipation during switching events. This characteristic reduces driver power requirements and enables higher switching frequencies. Applications with stringent EMI requirements may benefit from the lower gate charge of the FDMC86244.

Q: Are both devices suitable for high-temperature applications?

A: Both devices support operating junction temperatures up to 150°C. The FDMC86244 specifies an extended operating temperature range of −55°C to 150°C, providing additional low-temperature capability. The HAT2299WP-EL-E specification does not explicitly define the lower temperature limit. Applications requiring operation below 0°C should specify the FDMC86244 or confirm HAT2299WP-EL-E low-temperature performance with the manufacturer.

Q: Do regulatory compliance requirements differ between these devices?

A: Both devices maintain RoHS3 compliance and REACH Unaffected status, satisfying equivalent regulatory requirements for European and international markets. No compliance-based restrictions apply to substitution between these parts.

Q: What inventory considerations should influence part selection?

A: The HAT2299WP-EL-E maintains 2,594 pieces in stock, while the FDMC86244 maintains 35,200 pieces in stock. Applications with extended lead time requirements or high-volume production may benefit from the superior availability of the FDMC86244.