HAT2287WP-EL-E Equivalent & Substitute Parts

Part Overview

The HAT2287WP-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 200V drain-to-source voltage with 17A continuous drain current at 25°C (Ta). This device is designed for surface mount applications in the 8-WPAK (3) package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal and packaging requirements.

Substiute Parts

HAT2287WP-EL-E

Renesas Electronics CorporationIn Stock: 2171HAT2287WP-EL-E Datasheet

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FDMS2672

onsemiIn Stock: 26876FDMS2672 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the HAT2287WP-EL-E are identified based on the following critical electrical parameters:

Voltage Rating Compatibility: Drain-to-source voltage (Vdss) must equal 200V to ensure equivalent voltage withstand capability.

Current Capability: Continuous drain current (Id) at 25°C must support the application's current requirements. The HAT2287WP-EL-E specifies 17A (Ta), establishing the baseline for substitution evaluation.

On-State Resistance (Rds On): Maximum on-state resistance at specified gate-source voltage (Vgs) and drain current determines conduction losses. The HAT2287WP-EL-E specifies 94mOhm @ 8.5A, 10V.

Gate Charge (Qg): Total gate charge at 10V affects switching speed and driver requirements. The HAT2287WP-EL-E specifies 26nC @ 10V.

Gate-Source Voltage Rating (Vgs Max): Maximum gate-source voltage must be compatible with driver circuits. The HAT2287WP-EL-E specifies ±30V.

Input Capacitance (Ciss): Input capacitance affects gate drive requirements and switching characteristics. The HAT2287WP-EL-E specifies 1200pF @ 25V.

Power Dissipation: Maximum power dissipation capability must support thermal requirements. The HAT2287WP-EL-E specifies 30W (Tc).

Compliance Status: RoHS3 compliance and REACH unaffected status are mandatory for equivalent substitution.

Parameter Comparison

Engineering Selection Recommendations

FDMS2672 (onsemi) Substitution Criteria:

The FDMS2672 shares the same 200V drain-to-source voltage rating and surface mount package classification as the HAT2287WP-EL-E. Both devices are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, meeting compliance requirements for equivalent substitution.

The FDMS2672 specifies 20A continuous drain current at Tc (case temperature), which exceeds the HAT2287WP-EL-E's 17A rating at Ta (ambient temperature). The FDMS2672 demonstrates lower on-state resistance at its rated current (77mOhm @ 3.7A, 10V) compared to the HAT2287WP-EL-E (94mOhm @ 8.5A, 10V), indicating superior conduction efficiency.

Gate charge for the FDMS2672 is specified at 42nC @ 10V, which is higher than the HAT2287WP-EL-E's 26nC @ 10V. This parameter difference affects gate drive circuit design and switching speed characteristics.

The FDMS2672 specifies a maximum gate-source voltage of ±20V, which is lower than the HAT2287WP-EL-E's ±30V rating. Applications requiring gate-source voltages exceeding ±20V are not compatible with the FDMS2672.

Power dissipation capability for the FDMS2672 is rated at 78W (Tc), which exceeds the HAT2287WP-EL-E's 30W (Tc) rating, providing enhanced thermal performance.

Both devices maintain Active product status and are available in high inventory quantities, supporting production continuity.

Frequently Asked Questions (FAQ)

Q: Can the FDMS2672 directly replace the HAT2287WP-EL-E in all applications?

A: Direct replacement is limited by specific parameter differences. The FDMS2672's maximum gate-source voltage (±20V) is lower than the HAT2287WP-EL-E (±30V). Applications operating at gate-source voltages between ±20V and ±30V require the HAT2287WP-EL-E. The FDMS2672's higher gate charge (42nC vs. 26nC) may require gate driver circuit adjustments for equivalent switching performance.

Q: Are the package dimensions identical between HAT2287WP-EL-E and FDMS2672?

A: Both devices use the 8-PowerWDFN package classification. Specific dimensional compatibility must be verified against detailed package drawings, as package variants may exist within the same classification.

Q: What are the thermal performance differences?

A: The FDMS2672 is rated for 78W (Tc) power dissipation compared to the HAT2287WP-EL-E's 30W (Tc). The FDMS2672 provides superior thermal capability for high-power applications. The HAT2287WP-EL-E's lower gate charge (26nC) results in reduced switching losses in high-frequency applications.

Q: Are both parts compliant with current regulatory requirements?

A: Both the HAT2287WP-EL-E and FDMS2672 are RoHS3 compliant and REACH unaffected. Both devices carry MSL 1 (Unlimited) moisture sensitivity rating, meeting standard handling and storage requirements.

Q: What is the continuous drain current difference between these devices?

A: The HAT2287WP-EL-E specifies 17A at Ta (ambient temperature). The FDMS2672 specifies 3.7A at Ta and 20A at Tc (case temperature). Current ratings depend on measurement conditions; Tc-based ratings typically reflect higher current capability under controlled thermal conditions.

Q: How do gate charge specifications affect circuit design?

A: The HAT2287WP-EL-E's 26nC gate charge requires less gate drive energy compared to the FDMS2672's 42nC. Applications with current-limited gate drivers may require design modifications when substituting the FDMS2672.

Q: Can these devices be used interchangeably in switching power supply applications?

A: Interchangeability depends on specific circuit requirements. Both devices support 200V operation and surface mount assembly. Gate-source voltage limits, gate charge differences, and thermal requirements must be evaluated against circuit specifications before substitution.