HAT2197R-EL-E Equivalent & Substitute Parts

Part Overview

The HAT2197R-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 30V drain-to-source voltage with 16A continuous drain current at 25°C. This device is designed for surface mount applications in the 8-SOP package configuration and is currently in active product status. The part operates at a maximum junction temperature of 150°C with a power dissipation rating of 2.5W.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the same package type and voltage/current specifications. The following parts meet the substitution criteria based on matching drain-to-source voltage, package configuration, and thermal characteristics.

Substiute Parts

HAT2197R-EL-E
Renesas Electronics CorporationIn Stock: 19440HAT2197R-EL-E Datasheet
HAT2197R-EL-E
Current Part
FDS6670A
Fairchild SemiconductorIn Stock: 28925FDS6670A Datasheet
FDS6670A
Similar
FDS8896
onsemiIn Stock: 45430FDS8896 Datasheet
FDS8896
Similar
SI4386DY-T1-E3
Vishay SiliconixIn Stock: 7321SI4386DY-T1-E3 Datasheet
SI4386DY-T1-E3
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 16 A
Rds On (Max) @ 10V Vgs 6.7 mOhm
Power Dissipation (Max) 2.5 W
Operating Temperature (TJ) 150 °C
Package Type 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 30V
  • Package Type: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel

Performance Compatibility Parameters:

  • Continuous Drain Current (Id) @ 25°C: Minimum 11A (allows operation within thermal limits)
  • Power Dissipation (Max): 1.47W to 2.5W (thermal envelope compatibility)
  • Gate Drive Voltage: 4.5V to 10V (standard drive compatibility)
  • Vgs (Max): ±20V (gate voltage tolerance)

All three substitute parts meet these mandatory criteria and operate within the electrical and thermal envelope of the HAT2197R-EL-E.

Parameter Comparison

Parameter HAT2197R-EL-E (Renesas) FDS6670A (Fairchild) FDS8896 (onsemi) SI4386DY-T1-E3 (Vishay)
FET Type N-Channel N-Channel N-Channel N-Channel
Vdss 30V 30V 30V 30V
Id @ 25°C (Ta) 16A 13A 15A 11A
Rds On (Max) @ 10V Vgs 6.7 mOhm @ 8A 8 mOhm @ 13A 6 mOhm @ 15A 7 mOhm @ 16A
Power Dissipation (Max) 2.5W 2.5W 2.5W 1.47W
Operating Temperature (TJ) 150°C −55°C to 150°C −55°C to 150°C −55°C to 150°C
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Vgs (Max) ±20V ±20V ±20V ±20V
Gate Charge (Qg) @ Vgs 18 nC @ 4.5V 30 nC @ 5V 67 nC @ 10V 18 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2650 pF @ 10V 2220 pF @ 15V 2525 pF @ 15V Not specified
RoHS Status ROHS3 Compliant Not specified ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) Not specified 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

HAT2197R-EL-E (Primary Part) The HAT2197R-EL-E remains the optimal choice for applications requiring the full 16A continuous drain current specification. This part is ROHS3 compliant with MSL 1 rating and is actively manufactured by Renesas Electronics Corporation.

FDS8896 (onsemi) The FDS8896 provides the closest electrical performance match with 15A continuous drain current, 6 mOhm Rds On, and identical 2.5W power dissipation. This part is ROHS3 compliant with MSL 1 rating and offers extended operating temperature range (−55°C to 150°C). The FDS8896 is suitable for applications where the 1A reduction in continuous current is acceptable within system design margins.

FDS6670A (Fairchild Semiconductor) The FDS6670A operates at 13A continuous drain current with 8 mOhm Rds On and maintains 2.5W power dissipation. This part is part of the PowerTrench® series and offers extended operating temperature range (−55°C to 150°C). The FDS6670A is suitable for applications with lower current requirements or where gate charge characteristics (30 nC @ 5V) are advantageous for specific drive circuits.

SI4386DY-T1-E3 (Vishay Siliconix) The SI4386DY-T1-E3 operates at 11A continuous drain current with 7 mOhm Rds On and reduced power dissipation of 1.47W. This part is ROHS3 compliant with MSL 1 rating and part of the TrenchFET® series. The SI4386DY-T1-E3 is suitable for thermally constrained applications or designs with lower current requirements. Gate charge specification (18 nC @ 4.5V) matches the primary part.

All substitute parts are active products with ROHS3 compliance and MSL 1 ratings, ensuring regulatory and environmental compatibility with the HAT2197R-EL-E.

Frequently Asked Questions (FAQ)

Q: Can the FDS8896 directly replace the HAT2197R-EL-E in all applications?

A: The FDS8896 is mechanically and electrically compatible in the 8-SOIC package. The 1A reduction in continuous drain current (15A versus 16A) must be evaluated against application current requirements. Both parts share identical 30V Vdss, 2.5W power dissipation, and ±20V Vgs ratings. Thermal performance is equivalent at rated power dissipation.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The HAT2197R-EL-E and SI4386DY-T1-E3 both specify 18 nC @ 4.5V, providing identical gate drive characteristics. The FDS6670A specifies 30 nC @ 5V and FDS8896 specifies 67 nC @ 10V, requiring higher gate drive energy but not affecting substitution eligibility for standard drive circuits.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts are supplied in 8-SOIC (0.154", 3.90mm Width) surface mount packages, identical to the HAT2197R-EL-E. Packaging dimensions and pin configurations are mechanically compatible for PCB layout purposes.

Q: What is the significance of the extended operating temperature range on substitute parts?

A: The FDS6670A, FDS8896, and SI4386DY-T1-E3 all specify −55°C to 150°C operating temperature range, compared to the HAT2197R-EL-E specification of 150°C maximum. This extended range on substitute parts provides additional design margin for low-temperature operation but does not affect high-temperature performance equivalence.

Q: How do Rds On specifications compare across parts?

A: Rds On values are measured at different current levels: HAT2197R-EL-E at 6.7 mOhm @ 8A, FDS6670A at 8 mOhm @ 13A, FDS8896 at 6 mOhm @ 15A, and SI4386DY-T1-E3 at 7 mOhm @ 16A. Lower Rds On values reduce conduction losses. The FDS8896 offers the lowest Rds On specification, while all parts remain within acceptable on-resistance envelope for 30V MOSFET applications.

Q: Are all substitute parts RoHS3 compliant?

A: The FDS8896 and SI4386DY-T1-E3 are explicitly ROHS3 compliant. The FDS6670A RoHS status is not specified in available documentation. For applications requiring verified RoHS3 compliance, the FDS8896 and SI4386DY-T1-E3 are recommended.

Q: What is the MSL rating significance for these parts?

A: MSL 1 (Unlimited) rating indicates no moisture sensitivity restrictions during storage or handling. The HAT2197R-EL-E, FDS8896, and SI4386DY-T1-E3 all carry MSL 1 ratings, ensuring equivalent moisture handling requirements. The FDS6670A MSL rating is not specified.

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