HAT2173H-EL-E N-Channel MOSFET 100V 25A Equivalent & Substitute Parts

Part Overview

The HAT2173H-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 100V drain-to-source voltage and 25A continuous drain current at 25°C. This device is housed in an LFPAK surface mount package and is designed for power switching applications requiring moderate current handling and thermal management. The part is currently in active production status with 5043 units in stock.

Substitute parts become necessary when the original HAT2173H-EL-E is unavailable, when alternative thermal performance is required, or when higher current capacity is needed within the same voltage class. All substitute parts listed maintain the core electrical specifications of 100V drain-to-source voltage and N-Channel MOSFET technology, ensuring functional compatibility in applications where the original part cannot be sourced.

Key Parameters

Parameter	HAT2173H-EL-E	Unit
Manufacturer	Renesas Electronics Corporation	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	25	A (Ta)
Rds On (Max) @ Id, Vgs	15	mOhm @ 12.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	6	V @ 20mA
Gate Charge (Qg) @ Vgs	61	nC @ 10V
Input Capacitance (Ciss) @ Vds	4350	pF @ 10V
Power Dissipation (Max)	30	W (Tc)
Operating Temperature (TJ)	150	°C
Package / Case	SC-100, SOT-669 (LFPAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the HAT2173H-EL-E is determined by strict adherence to the following electrical and mechanical parameters:

Core Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 100V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Surface Mount
Package Compatibility: Must be LFPAK or equivalent footprint (SC-100, SOT-669)

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute parts may exceed 25A; lower current ratings are not acceptable
Rds On (Max): Substitute parts may have lower on-resistance; higher values are acceptable only if thermal performance permits
Gate Charge (Qg): Variation permitted based on die design differences
Power Dissipation (Max): Substitute parts may exceed 30W; lower ratings are not acceptable
Operating Temperature Range: Substitute parts may have extended temperature ranges

All five substitute parts (PSMN012-100YS,115; PSMN016-100YS,115; PSMN020-100YS,115; PSMN028-100YS,115; PSMN039-100YS,115) are manufactured by Nexperia USA Inc. and meet all core substitution criteria. These parts are available in LFPAK56 and Power-SO8 packages, which are mechanically and electrically compatible with the original LFPAK package.

Parameter Comparison

Parameter	HAT2173H-EL-E	PSMN012-100YS,115	PSMN016-100YS,115	PSMN020-100YS,115	PSMN028-100YS,115	PSMN039-100YS,115	Unit
Manufacturer	Renesas	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	100	100	100	100	100	100	V
Continuous Drain Current (Id) @ 25°C	25 (Ta)	60 (Tc)	51 (Tc)	43 (Tc)	42 (Tc)	28.1 (Tc)	A
Rds On (Max) @ Id, Vgs	15 @ 12.5A, 10V	12 @ 15A, 10V	16.3 @ 15A, 10V	20.5 @ 15A, 10V	27.5 @ 15A, 10V	39.5 @ 15A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	6 @ 20mA	4 @ 1mA	4 @ 1mA	4 @ 1mA	4 @ 1mA	4 @ 1mA	V
Gate Charge (Qg) @ Vgs	61 @ 10V	64 @ 10V	54 @ 10V	41 @ 10V	33 @ 10V	23 @ 10V	nC
Input Capacitance (Ciss) @ Vds	4350 @ 10V	3500 @ 50V	2744 @ 50V	2210 @ 50V	1634 @ 50V	1847 @ 50V	pF
Power Dissipation (Max)	30 (Tc)	130 (Tc)	117 (Tc)	106 (Tc)	89 (Tc)	74 (Tc)	W
Operating Temperature (TJ)	150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package / Case	SC-100, SOT-669	SC-100, SOT-669	SC-100, SOT-669	SC-100, SOT-669	SC-100, SOT-669	SC-100, SOT-669	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

All substitute parts listed are active production devices with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the environmental and regulatory status of the HAT2173H-EL-E. Selection among the five Nexperia alternatives depends on application-specific current and thermal requirements:

PSMN012-100YS,115 is suitable for applications requiring maximum current capacity (60A continuous) and thermal headroom (130W dissipation). This part provides the lowest on-resistance (12 mOhm) and is appropriate for high-efficiency switching circuits where gate drive capability is not a limiting factor.

PSMN016-100YS,115 offers 51A continuous current and 117W power dissipation, providing a balanced option between current capacity and thermal performance with 16.3 mOhm on-resistance.

PSMN020-100YS,115 delivers 43A continuous current and 106W power dissipation with 20.5 mOhm on-resistance. This part is suitable for moderate-current applications where the original HAT2173H-EL-E current rating (25A) is insufficient but maximum current capacity is not required.

PSMN028-100YS,115 provides 42A continuous current and 89W power dissipation with 27.5 mOhm on-resistance, offering a cost-effective alternative for applications with moderate thermal constraints.

PSMN039-100YS,115 is rated for 28.1A continuous current and 74W power dissipation with 39.5 mOhm on-resistance. This part is the closest functional equivalent to the HAT2173H-EL-E in terms of current rating and is suitable for direct replacement in applications where the original part specifications are adequate.

All substitute parts feature extended operating temperature ranges (-55°C to 175°C) compared to the HAT2173H-EL-E (150°C maximum), providing additional thermal margin in temperature-sensitive applications. Gate threshold voltage differences (4V for Nexperia parts versus 6V for the Renesas part) must be evaluated against circuit gate drive voltage levels to ensure proper device switching behavior.

Frequently Asked Questions (FAQ)

Q: Can PSMN039-100YS,115 be used as a direct replacement for HAT2173H-EL-E?

A: PSMN039-100YS,115 is electrically and mechanically compatible with HAT2173H-EL-E. Both devices share 100V Vdss rating, N-Channel MOSFET technology, and LFPAK surface mount packaging. The PSMN039 provides 28.1A continuous current, which exceeds the HAT2173H-EL-E specification of 25A. Gate threshold voltage differs (4V versus 6V), requiring verification that circuit gate drive voltage is sufficient for proper switching.

Q: What is the difference between the Ta and Tc current ratings shown in the parameter table?

A: Ta denotes continuous drain current measured at ambient temperature (25°C), while Tc denotes continuous drain current measured at case temperature. The HAT2173H-EL-E specifies 25A (Ta), whereas Nexperia substitute parts specify current ratings at Tc. These measurements reflect different thermal reference points and are not directly comparable without thermal analysis of the specific application.

Q: Are all substitute parts available in the same package as the original HAT2173H-EL-E?

A: All substitute parts are housed in LFPAK56 and Power-SO8 packages, which are mechanically and electrically compatible with the original LFPAK package (SC-100, SOT-669). PCB footprints and thermal vias are compatible across all listed parts.

Q: Which substitute part should be selected for applications with limited gate drive voltage?

A: Gate threshold voltage (Vgs(th)) is lower for all Nexperia substitute parts (4V @ 1mA) compared to the HAT2173H-EL-E (6V @ 20mA). Lower threshold voltage allows switching at reduced gate drive voltages. If gate drive voltage is limited, any Nexperia substitute part will switch more readily than the original device. Verify that gate drive voltage exceeds the specified threshold voltage plus any required overdrive margin for the selected part.

Q: What is the impact of higher gate charge (Qg) on circuit performance?

A: Gate charge determines the energy required to switch the device and affects switching speed and gate driver power dissipation. The HAT2173H-EL-E specifies 61 nC @ 10V, while PSMN012-100YS,115 specifies 64 nC @ 10V. Lower gate charge values (PSMN039-100YS,115 at 23 nC) reduce gate driver stress and switching losses. Selection depends on gate driver capability and switching frequency requirements.

Q: Can substitute parts with higher power dissipation ratings be used in thermally constrained applications?

A: Higher power dissipation ratings indicate greater thermal capacity but do not guarantee lower junction temperature in a given application. Actual junction temperature depends on power dissipation, thermal resistance, and cooling conditions. Parts with lower on-resistance (such as PSMN012-100YS,115 at 12 mOhm) generate less heat at specified current levels and may be preferable in thermally constrained designs.

Q: Are all substitute parts RoHS3 compliant and suitable for regulated industries?

A: All substitute parts are ROHS3 compliant with MSL 1 (unlimited moisture sensitivity level), matching the environmental and regulatory status of the HAT2173H-EL-E. All parts carry EAR99 ECCN classification and are REACH unaffected, making them suitable for applications requiring regulatory compliance.

Q: What is the significance of input capacitance (Ciss) differences among substitute parts?

A: Input capacitance affects gate charge requirements and switching speed. The HAT2173H-EL-E specifies 4350 pF @ 10V, while substitute parts range from 1634 pF to 3500 pF. Lower input capacitance reduces gate driver power dissipation and allows faster switching transitions. Selection depends on gate driver capability and switching frequency requirements of the application.

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