HAT2172H-EL-E N-Channel 40V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The HAT2172H-EL-E is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Renesas Electronics Corporation. This device operates at 40V drain-to-source voltage with a continuous drain current rating of 30A at 25°C (Ta) and maximum power dissipation of 20W (Tc). The component is housed in an LFPAK surface mount package (SC-100, SOT-669) and is classified as Active product status with full RoHS3 compliance.

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatibility with the same package family and voltage rating. Substitutes are selected where drain current capacity, on-resistance characteristics, and thermal performance align with or exceed the original specification.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	30	A (Ta)
On-Resistance (Rds On Max) @ 15A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	3	V (Max)
Maximum Gate Voltage (Vgs)	±20	V
Power Dissipation (Max) @ Tc	20	W
Operating Junction Temperature (TJ)	150	°C
Package Type	LFPAK (SC-100, SOT-669)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution logic for the HAT2172H-EL-E is based on the following criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
FET Type: N-Channel MOSFET technology
Package Family: LFPAK surface mount configuration
Continuous Drain Current (Id): Must meet or exceed 30A rating
On-Resistance (Rds On): Lower or equivalent values indicate improved performance
Gate Voltage Compatibility (Vgs): Must support ±20V maximum rating
Compliance: RoHS3 and REACH requirements maintained

Substitute Categories:

Direct Equivalent (Same Current Class): RJK0451DPB-00#J5 provides 35A continuous drain current with improved on-resistance characteristics and higher power dissipation capability (45W vs. 20W).
Higher Current Capacity (Enhanced Performance): PSMN5R8-40YS,115, PSMN4R0-40YS,115, PSMN2R6-40YS,115, and PSMN8R3-40YS,115 offer drain current ratings from 70A to 100A with significantly improved thermal performance and lower on-resistance values. These parts utilize the LFPAK56 package variant.

All substitute parts maintain the 40V Vdss rating, surface mount LFPAK package family, and full compliance certifications required for direct substitution in the HAT2172H-EL-E application.

Parameter Comparison

Parameter	HAT2172H-EL-E	RJK0451DPB-00#J5	PSMN5R8-40YS,115	PSMN4R0-40YS,115	PSMN2R6-40YS,115	PSMN8R3-40YS,115
Manufacturer	Renesas	Renesas	Nexperia	Nexperia	Nexperia	Nexperia
Vdss (V)	40	40	40	40	40	40
Id @ 25°C (A)	30 (Ta)	35 (Ta)	90 (Tc)	100 (Tc)	100 (Tc)	70 (Tc)
Rds On Max @ 10V (mOhm)	7.5 @ 15A	7 @ 17.5A	5.7 @ 15A	4.2 @ 15A	2.8 @ 25A	8.6 @ 15A
Power Dissipation Max (W)	20 (Tc)	45 (Tc)	89 (Tc)	106 (Tc)	131 (Tc)	74 (Tc)
Gate Charge Qg @ 10V (nC)	32	14	28.8	38	63	20
Input Capacitance Ciss (pF)	2420 @ 10V	2010 @ 10V	1703 @ 20V	2410 @ 20V	3776 @ 12V	1215 @ 20V
Vgs(th) Max @ 1mA (V)	3	—	4	4	4	4
Vgs Max (V)	±20	±20	±20	±20	±20	±20
Operating Temperature TJ (°C)	150	150	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	LFPAK (SC-100, SOT-669)	LFPAK (SC-100, SOT-669)	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8
Product Status	Active	Active	Not For New Designs	Not For New Designs	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Substitution (Same Performance Class):

The RJK0451DPB-00#J5 serves as the primary equivalent substitute. This Renesas device maintains identical voltage rating (40V Vdss) and exceeds the continuous drain current specification (35A vs. 30A). The RJK0451DPB-00#J5 offers superior thermal performance with 45W maximum power dissipation compared to 20W in the original part, while maintaining the same LFPAK package footprint. Both devices are Active status products with full RoHS3 compliance and REACH unaffected certification.

For Enhanced Performance Applications:

The Nexperia PSMN series devices (PSMN5R8-40YS,115, PSMN4R0-40YS,115, PSMN2R6-40YS,115, PSMN8R3-40YS,115) provide significantly higher current capacity (70A to 100A) with improved on-resistance characteristics and substantially higher power dissipation ratings (74W to 131W). These parts utilize the LFPAK56 package variant and support extended operating temperature ranges (-55°C to 175°C). All Nexperia substitutes maintain 40V Vdss rating and full compliance certifications.

Product Status Considerations:

PSMN2R6-40YS,115 and PSMN4R0-40YS,115 are designated "Not For New Designs" and should be selected only for replacement or legacy system applications. PSMN5R8-40YS,115 and PSMN8R3-40YS,115 retain Active status and are suitable for new design implementations. RJK0451DPB-00#J5 maintains Active status for both new and existing applications.

Frequently Asked Questions (FAQ)

Q: Can the RJK0451DPB-00#J5 directly replace the HAT2172H-EL-E without PCB modifications?

A: Yes. Both devices use the LFPAK package (SC-100, SOT-669) with identical pin configuration and footprint. The RJK0451DPB-00#J5 provides superior electrical performance with higher current capacity (35A vs. 30A) and improved thermal handling (45W vs. 20W). No PCB layout changes are required.

Q: What is the difference between the HAT2172H-EL-E and the Nexperia PSMN series substitutes?

A: The primary differences are package variant (LFPAK56 vs. LFPAK), current capacity (70A to 100A vs. 30A), and thermal performance (74W to 131W vs. 20W). The Nexperia devices offer enhanced performance for applications requiring higher current handling or improved thermal dissipation. All maintain the 40V Vdss rating and LFPAK package family compatibility.

Q: Are the PSMN2R6-40YS,115 and PSMN4R0-40YS,115 suitable for new product designs?

A: These parts are designated "Not For New Designs" by the manufacturer. They are available for replacement applications and legacy system support only. For new designs, select PSMN5R8-40YS,115, PSMN8R3-40YS,115, or RJK0451DPB-00#J5, which all maintain Active product status.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Drain-to-Source Voltage (Vdss) equal to or exceeding 40V, (2) N-Channel MOSFET technology, (3) Continuous drain current rating meeting or exceeding 30A, (4) Gate voltage compatibility with ±20V maximum rating, and (5) LFPAK surface mount package family. All substitute parts meet these criteria.

Q: Do all substitute parts maintain the same compliance certifications as the HAT2172H-EL-E?

A: Yes. All listed substitute parts are RoHS3 compliant, REACH unaffected, and carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Moisture sensitivity level (MSL 1 - Unlimited) is consistent across all parts.

Q: What is the advantage of selecting a higher current-rated substitute like PSMN2R6-40YS,115?

A: Higher current-rated devices provide improved thermal performance and lower on-resistance characteristics. The PSMN2R6-40YS,115 offers 100A continuous drain current with 2.8mOhm on-resistance and 131W power dissipation, compared to the HAT2172H-EL-E at 30A, 7.5mOhm, and 20W. This results in reduced heat generation and improved efficiency in high-current applications.

Q: Are there package footprint differences between LFPAK and LFPAK56 variants?

A: The LFPAK56 is a variant within the LFPAK package family. While both are surface mount configurations, the LFPAK56 may have different thermal pad dimensions and pin configurations optimized for higher current applications. PCB layout verification is recommended when transitioning between LFPAK and LFPAK56 variants, particularly for thermal management considerations.

Q: What is the gate charge (Qg) significance when selecting a substitute?

A: Gate charge affects switching speed and driver circuit requirements. The HAT2172H-EL-E has 32nC gate charge at 10V. Substitutes range from 14nC (RJK0451DPB-00#J5) to 63nC (PSMN2R6-40YS,115). Lower gate charge enables faster switching and reduced driver power consumption. Verify that the gate driver circuit can accommodate the selected device's gate charge specification.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message