HAT2168H-EL-E N-Channel MOSFET 30V 30A Equivalent & Substitute Parts

Part Overview

The HAT2168H-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 30V drain-to-source voltage and 30A continuous drain current in a surface mount LFPAK package. This device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges. The HAT2168H-EL-E operates within a defined set of electrical characteristics that establish the basis for identifying functionally compatible alternatives from other manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	30	A
On-State Resistance (Rds On) @ 15A, 10V	7.9	mOhm
Gate Charge (Qg) @ 4.5V	11	nC
Gate-Source Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss) @ 10V	1730	pF
Power Dissipation (Max)	15	W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package	LFPAK, SC-100, SOT-669	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitute parts for the HAT2168H-EL-E are identified based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
N-Channel MOSFET technology
Surface mount packaging (LFPAK or compatible variants)
Gate-Source Voltage (Vgs): ±20V or greater
RoHS3 compliance and REACH unaffected status
Active product status

Secondary Compatibility Parameters:

Continuous drain current rating at or above 30A
On-state resistance (Rds On) comparable to or lower than 7.9 mOhm @ 15A, 10V
Gate charge (Qg) within acceptable switching performance range
Operating temperature range supporting 150°C junction temperature minimum
Input capacitance (Ciss) suitable for gate drive circuit design

The substitute parts listed below meet or exceed the electrical specifications of the HAT2168H-EL-E while maintaining mechanical and regulatory compatibility. All substitutes are manufactured by Nexperia USA Inc. and share identical compliance certifications.

Parameter Comparison

Parameter	HAT2168H-EL-E	PH2925U,115	PSMN1R2-25YL,115	PSMN1R3-30YL,115	PSMN6R0-30YLDX	PSMN6R1-30YLDX	PSMN7R5-30YLDX	PSMN9R5-30YLC,115
Manufacturer	Renesas	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia
Vdss (V)	30	25	25	30	30	30	30	30
Id @ 25°C (A)	30	100	100	100	66	66	51	44
Rds On @ 15A, 10V (mOhm)	7.9	3.0	1.2	1.3	6.0	6.0	7.5	9.8
Qg @ 10V (nC)	11	92	105	100	13.7	13.6	11.3	10.4
Vgs Max (V)	±20	±10	±20	±20	±20	±20	±20	±20
Ciss @ 10V (pF)	1730	6150	6380	6227	832	817	655	681
Power Dissipation Max (W)	15	62.5	121	121	47	47	34	34
Operating Temp (°C)	150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	LFPAK, SC-100, SOT-669	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Voltage Rating Compatibility: All substitute parts maintain the 30V Vdss rating of the HAT2168H-EL-E, with the exception of PH2925U,115 and PSMN1R2-25YL,115, which are rated at 25V. The 25V-rated devices are suitable only for applications where the maximum operating voltage does not exceed 25V.

Current Rating Considerations: The HAT2168H-EL-E is rated for 30A continuous drain current. Substitute parts PSMN1R3-30YL,115, PSMN1R2-25YL,115, and PH2925U,115 provide 100A ratings, offering increased current capacity. PSMN6R0-30YLDX and PSMN6R1-30YLDX provide 66A ratings. PSMN7R5-30YLDX provides 51A, and PSMN9R5-30YLC,115 provides 44A. All exceed the minimum 30A requirement.

On-State Resistance Performance: The HAT2168H-EL-E exhibits 7.9 mOhm Rds On @ 15A, 10V. Substitute parts with lower Rds On values (PSMN1R2-25YL,115 at 1.2 mOhm, PSMN1R3-30YL,115 at 1.3 mOhm, and PH2925U,115 at 3.0 mOhm) provide superior conduction efficiency. PSMN6R0-30YLDX and PSMN6R1-30YLDX at 6.0 mOhm, PSMN7R5-30YLDX at 7.5 mOhm, and PSMN9R5-30YLC,115 at 9.8 mOhm are comparable or slightly higher.

Gate Charge and Switching Characteristics: The HAT2168H-EL-E exhibits 11 nC gate charge @ 4.5V. PSMN9R5-30YLC,115 (10.4 nC @ 10V), PSMN7R5-30YLDX (11.3 nC @ 10V), PSMN6R0-30YLDX (13.7 nC @ 10V), and PSMN6R1-30YLDX (13.6 nC @ 10V) provide comparable switching performance. PH2925U,115, PSMN1R2-25YL,115, and PSMN1R3-30YL,115 exhibit higher gate charge (92 nC, 105 nC, and 100 nC respectively), requiring higher gate drive current.

Regulatory and Compliance Status: All substitute parts are RoHS3 compliant and REACH unaffected, matching the HAT2168H-EL-E compliance profile. All devices maintain Active product status with unlimited moisture sensitivity level (MSL 1).

Temperature Operating Range: The HAT2168H-EL-E supports 150°C maximum junction temperature. All substitute parts support this temperature or higher, with PSMN6R0-30YLDX, PSMN6R1-30YLDX, PSMN7R5-30YLDX, and PSMN9R5-30YLC,115 rated to 175°C, providing extended thermal margin.

Package and Mechanical Compatibility: All substitute parts utilize LFPAK56 or Power-SO8 surface mount packages, compatible with the HAT2168H-EL-E LFPAK footprint. PCB layout verification is required to confirm mechanical fit.

Frequently Asked Questions (FAQ)

Q: Can PH2925U,115 be used as a direct replacement for HAT2168H-EL-E?

A: PH2925U,115 is electrically compatible for applications operating at 25V or below. The device provides 100A continuous current capacity and 62.5W power dissipation, exceeding HAT2168H-EL-E specifications. However, the 25V Vdss rating limits use to circuits where maximum voltage does not exceed 25V. Gate charge is significantly higher (92 nC vs. 11 nC), requiring gate drive circuit verification.

Q: Which substitute part most closely matches the HAT2168H-EL-E electrical characteristics?

A: PSMN9R5-30YLC,115 provides the closest match, with 30V Vdss rating, 44A continuous current (exceeding 30A requirement), 9.8 mOhm Rds On (comparable to 7.9 mOhm), and 10.4 nC gate charge (matching 11 nC). Operating temperature extends to 175°C, providing thermal margin beyond the HAT2168H-EL-E 150°C rating.

Q: Are there current rating limitations when selecting a substitute?

A: All listed substitute parts meet or exceed the 30A continuous drain current requirement of the HAT2168H-EL-E. Selection should be based on application current demand. For applications requiring exactly 30A, any substitute part rated at 30A or higher is acceptable. Lower-rated devices (PSMN9R5-30YLC,115 at 44A) remain suitable for 30A operation.

Q: What is the impact of higher gate charge in substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge (PH2925U,115 at 92 nC, PSMN1R2-25YL,115 at 105 nC) requires increased gate drive current or longer switching times compared to the HAT2168H-EL-E (11 nC). Gate drive circuit design must accommodate the selected device's gate charge specification to ensure proper switching performance and thermal management.

Q: Can PSMN1R2-25YL,115 be used in a 30V application?

A: No. PSMN1R2-25YL,115 is rated for 25V maximum Vdss. Use in applications exceeding 25V violates the device rating and creates risk of gate oxide breakdown. PSMN1R3-30YL,115 is the equivalent Nexperia device rated for 30V operation.

Q: What are the packaging differences between substitute parts?

A: All substitute parts use LFPAK56 or Power-SO8 surface mount packages, compatible with the HAT2168H-EL-E LFPAK footprint. Physical dimensions and pin configurations are equivalent. PCB layout and thermal management design should be verified for each specific application to ensure adequate heat dissipation based on the selected device's power rating.

Q: Are all substitute parts available in the same packaging options?

A: Substitute parts are available in Tape & Reel (TR) or Cut Tape (CT) & Digi-Reel® packaging. PH2925U,115, PSMN6R0-30YLDX, PSMN7R5-30YLDX, and PSMN9R5-30YLC,115 are available in Tape & Reel. PSMN1R2-25YL,115, PSMN1R3-30YL,115, and PSMN6R1-30YLDX are available in Cut Tape & Digi-Reel®. Verify packaging availability with supplier for production requirements.

Q: How does on-state resistance affect thermal performance?

A: On-state resistance (Rds On) directly determines conduction losses: Power Loss = I²Rds On. Lower Rds On values reduce heat generation. PSMN1R2-25YL,115 (1.2 mOhm) generates significantly less heat than HAT2168H-EL-E (7.9 mOhm) at equivalent current levels. Devices with Rds On values near or above 7.9 mOhm (PSMN9R5-30YLC,115 at 9.8 mOhm) generate comparable or slightly higher heat and require equivalent thermal management.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are RoHS3 compliant and REACH unaffected, matching the HAT2168H-EL-E regulatory status. All devices maintain Active product status. Moisture sensitivity level is MSL 1 (unlimited) for all parts, indicating no moisture-related handling restrictions during assembly.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message