HAT2140H-EL-E N-Channel MOSFET 100V 25A Equivalent & Substitute Parts

Part Overview

The HAT2140H-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 100V drain-to-source voltage and 25A continuous drain current at 25°C. This device is housed in an LFPAK surface mount package and is designed for power switching applications requiring moderate current handling and thermal management. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts become necessary when the original HAT2140H-EL-E is unavailable due to supply constraints, inventory depletion, or when design requirements permit operation with alternative electrical characteristics within the same voltage class and package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	25	A (Ta)
On-State Resistance (Rds On Max) @ 12.5A, 10V	16	mOhm
Gate Charge (Qg Max) @ 10V	105	nC
Input Capacitance (Ciss Max) @ 10V	6500	pF
Power Dissipation (Max)	30	W (Tc)
Gate Voltage (Vgs Max)	±20	V
Operating Temperature (TJ)	150	°C
Package Type	LFPAK (SC-100, SOT-669)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the HAT2140H-EL-E is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 100V
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide (MOSFET)
Gate Voltage (Vgs Max): Must support ±20V
Mounting Type: Must be Surface Mount
Package Family: Must be LFPAK-based (SC-100, SOT-669 compatible)
Compliance: Must maintain ROHS3 compliance and MSL 1 rating

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute parts may exceed 25A; lower ratings are not acceptable
On-State Resistance (Rds On): Substitute parts may have lower or higher values; electrical performance trade-offs are permitted
Power Dissipation: Substitute parts may exceed 30W; lower ratings are not acceptable
Operating Temperature Range: Substitute parts may have extended temperature ranges
Gate Charge and Input Capacitance: Variations permitted within the LFPAK family

All five substitute parts listed (PSMN012-100YS,115; PSMN016-100YS,115; PSMN020-100YS,115; PSMN028-100YS,115; PSMN039-100YS,115) meet these substitution criteria and are manufactured by Nexperia USA Inc. as active production devices with identical compliance certifications.

Parameter Comparison

Parameter	HAT2140H-EL-E (Renesas)	PSMN012-100YS,115 (Nexperia)	PSMN016-100YS,115 (Nexperia)	PSMN020-100YS,115 (Nexperia)	PSMN028-100YS,115 (Nexperia)	PSMN039-100YS,115 (Nexperia)
Drain-to-Source Voltage (Vdss)	100V	100V	100V	100V	100V	100V
Continuous Drain Current (Id) @ 25°C	25A (Ta)	60A (Tc)	51A (Tc)	43A (Tc)	42A (Tc)	28.1A (Tc)
On-State Resistance (Rds On Max) @ 10V	16 mOhm @ 12.5A	12 mOhm @ 15A	16.3 mOhm @ 15A	20.5 mOhm @ 15A	27.5 mOhm @ 15A	39.5 mOhm @ 15A
Gate Charge (Qg Max) @ 10V	105 nC	64 nC	54 nC	41 nC	33 nC	23 nC
Input Capacitance (Ciss Max)	6500 pF @ 10V	3500 pF @ 50V	2744 pF @ 50V	2210 pF @ 50V	1634 pF @ 50V	1847 pF @ 50V
Power Dissipation (Max)	30W (Tc)	130W (Tc)	117W (Tc)	106W (Tc)	89W (Tc)	74W (Tc)
Gate Voltage (Vgs Max)	±20V	±20V	±20V	±20V	±20V	±20V
Operating Temperature (TJ)	150°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C
Package Type	LFPAK (SC-100, SOT-669)	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8	LFPAK56, Power-SO8
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All five Nexperia substitute parts are qualified for direct replacement of the HAT2140H-EL-E based on the following engineering criteria:

Voltage Class Compatibility: All substitute parts maintain the 100V Vdss rating, ensuring compatibility with existing circuit voltage specifications and protection schemes.

Current Handling: All substitute parts exceed the 25A continuous drain current requirement of the original part. The PSMN012-100YS,115 provides the highest current rating at 60A, while the PSMN039-100YS,115 provides the lowest at 28.1A. All ratings exceed the minimum 25A threshold.

Regulatory Compliance: All substitute parts carry ROHS3 compliance certification and maintain MSL 1 (unlimited) moisture sensitivity rating, matching the original part's environmental qualification status. REACH Unaffected status is consistent across all parts.

Production Status: All substitute parts are in active production, ensuring long-term availability and supply chain stability.

Thermal Performance: All substitute parts provide equal or superior power dissipation ratings (74W to 130W) compared to the original 30W rating, enabling operation in thermally demanding applications.

Temperature Range: All substitute parts support extended operating temperature ranges (-55°C to 175°C) compared to the original part's 150°C maximum, providing additional operational margin in temperature-sensitive applications.

Gate Drive Compatibility: All substitute parts maintain ±20V gate voltage specification, ensuring compatibility with existing gate drive circuits without modification.

Selection among the five substitute parts should be based on application-specific requirements for on-state resistance, gate charge, and input capacitance characteristics. Lower Rds On values (PSMN012-100YS,115 at 12 mOhm) reduce conduction losses but increase gate charge requirements. Higher Rds On values (PSMN039-100YS,115 at 39.5 mOhm) reduce gate charge and switching losses but increase conduction losses.

Frequently Asked Questions (FAQ)

Q: Can the PSMN012-100YS,115 be used as a direct replacement for the HAT2140H-EL-E?

A: Yes. The PSMN012-100YS,115 meets all critical substitution parameters: 100V Vdss rating, N-Channel MOSFET technology, ±20V gate voltage specification, LFPAK package family, ROHS3 compliance, and MSL 1 rating. The higher current rating (60A vs. 25A) and lower on-state resistance (12 mOhm vs. 16 mOhm) provide improved performance characteristics.

Q: What is the difference between the HAT2140H-EL-E and PSMN020-100YS,115 in terms of on-state resistance?

A: The HAT2140H-EL-E specifies 16 mOhm on-state resistance at 12.5A and 10V gate voltage. The PSMN020-100YS,115 specifies 20.5 mOhm at 15A and 10V gate voltage. The PSMN020-100YS,115 exhibits higher on-state resistance, resulting in increased conduction losses but reduced gate charge requirements (41 nC vs. 105 nC).

Q: Are all substitute parts available in the same package as the original HAT2140H-EL-E?

A: All substitute parts use LFPAK-based packages (LFPAK56, Power-SO8) compatible with the SC-100 and SOT-669 package family of the original part. Physical footprint compatibility should be verified against specific PCB layout requirements, as LFPAK56 represents an enhanced variant of the LFPAK family.

Q: Which substitute part has the lowest gate charge?

A: The PSMN039-100YS,115 has the lowest gate charge at 23 nC at 10V, compared to the original part's 105 nC. Lower gate charge reduces gate drive power requirements and enables faster switching transitions in high-frequency applications.

Q: Do all substitute parts support the same gate voltage range as the original part?

A: Yes. All substitute parts maintain the ±20V gate voltage specification, ensuring compatibility with existing gate drive circuits without modification or redesign.

Q: What is the operating temperature range difference between the original and substitute parts?

A: The HAT2140H-EL-E specifies a maximum junction temperature (TJ) of 150°C. All substitute parts support extended operating temperature ranges from -55°C to 175°C, providing 25°C additional high-temperature margin and 55°C additional low-temperature capability.

Q: Can I use the PSMN039-100YS,115 in an application requiring 25A continuous current?

A: Yes. The PSMN039-100YS,115 is rated for 28.1A continuous drain current at case temperature (Tc), exceeding the 25A requirement. However, thermal management must account for the higher on-state resistance (39.5 mOhm vs. 16 mOhm), which increases conduction losses and heat generation.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts carry ROHS3 compliance certification, matching the original part's environmental qualification status and regulatory requirements.

Q: What is the difference in input capacitance between the original and substitute parts?

A: The HAT2140H-EL-E specifies 6500 pF input capacitance at 10V. Substitute parts range from 1634 pF to 3500 pF at 50V. Lower input capacitance reduces gate drive power requirements and enables faster switching transitions, but measurement conditions differ (10V vs. 50V Vds).

Q: Which substitute part provides the best thermal performance?

A: The PSMN012-100YS,115 provides the highest power dissipation rating at 130W (Tc), compared to the original part's 30W. This part also features the lowest on-state resistance (12 mOhm), minimizing conduction losses and heat generation in high-current applications.

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