HAT2116H-EL-E Equivalent & Substitute Parts

Part Overview

The HAT2116H-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 30V drain-to-source voltage with 30A continuous drain current at 25°C. This device is housed in an LFPAK surface mount package and is designed for applications requiring efficient switching and power management in compact form factors. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified to address inventory availability, extended thermal performance requirements, or higher current capacity needs while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

HAT2116H-EL-E

Renesas Electronics CorporationIn Stock: 57871HAT2116H-EL-E Datasheet

Current PartRFQ

PSMN013-30YLC,115

Nexperia USA Inc.In Stock: 2022PSMN013-30YLC,115 Datasheet

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PSMN1R2-25YL,115

Nexperia USA Inc.In Stock: 3516PSMN1R2-25YL,115 Datasheet

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PSMN1R3-30YL,115

Nexperia USA Inc.In Stock: 2017PSMN1R3-30YL,115 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the HAT2116H-EL-E is determined by the following critical parameters:

Primary Compatibility Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain-to-Source Voltage (Vdss): 30V or higher
• Continuous Drain Current (Id): Equal to or greater than 30A
• Mounting Type: Surface Mount
• Package Category: LFPAK-based packages

Secondary Compatibility Factors:

• RoHS3 compliance status
• Moisture Sensitivity Level (MSL 1)
• Gate drive voltage compatibility (±20V maximum)
• Operating temperature range overlap

The three substitute parts listed below meet or exceed the electrical specifications of the HAT2116H-EL-E while maintaining N-Channel MOSFET topology and surface mount configuration. All substitutes are manufactured by Nexperia USA Inc. and carry Active product status with identical RoHS3 and REACH compliance.

Parameter Comparison

Engineering Selection Recommendations

PSMN013-30YLC,115 (Nexperia USA Inc.)

This substitute maintains the 30V Vdss rating and exceeds the 30A continuous drain current specification with 32A capability. The device offers improved thermal performance with 26W maximum power dissipation compared to 15W in the original part. Gate charge is significantly reduced to 8.3 nC, resulting in lower switching losses. Operating temperature range extends to 175°C, providing enhanced thermal margin. All regulatory certifications (RoHS3, REACH) and MSL ratings are identical. This substitute is suitable for applications where thermal performance and switching efficiency are prioritized.

PSMN1R2-25YL,115 (Nexperia USA Inc.)

This substitute provides substantially higher current capacity at 100A continuous drain current, with a reduced Vdss rating of 25V. The RDS(on) is significantly lower at 1.2 mOhm, enabling reduced conduction losses in high-current applications. Power dissipation capability reaches 121W, supporting demanding thermal environments. Gate charge increases to 105 nC due to higher current rating. This part is applicable in applications where the 25V voltage rating is acceptable and higher current handling is required. Operating temperature range is -55°C to 150°C.

PSMN1R3-30YL,115 (Nexperia USA Inc.)

This substitute maintains the 30V Vdss rating while providing 100A continuous drain current capacity. RDS(on) is 1.3 mOhm at 15A and 10V, delivering superior conduction efficiency. Maximum power dissipation reaches 121W, supporting high-power switching applications. Gate charge is 100 nC at 10V. Operating temperature range spans -55°C to 150°C. This part directly upgrades the current and thermal capabilities while preserving the original voltage specification. All compliance certifications remain identical.

All three substitutes maintain N-Channel MOSFET topology, surface mount configuration, and full regulatory compliance. Selection between substitutes depends on specific application requirements regarding voltage rating, current capacity, thermal dissipation, and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can PSMN013-30YLC,115 be used as a direct replacement for HAT2116H-EL-E?

A: Yes. Both devices share identical 30V Vdss rating and N-Channel MOSFET topology. The PSMN013-30YLC,115 exceeds the 30A current specification and provides enhanced thermal performance. Package types are both LFPAK-based surface mount configurations. All regulatory certifications align.

Q: What is the primary difference between PSMN1R2-25YL,115 and PSMN1R3-30YL,115?

A: The PSMN1R2-25YL,115 is rated for 25V Vdss, while the PSMN1R3-30YL,115 maintains 30V Vdss. Both provide 100A continuous drain current and 121W power dissipation. Selection depends on circuit voltage requirements. The PSMN1R3-30YL,115 is preferred when the original 30V specification must be preserved.

Q: Are there package compatibility concerns when substituting these parts?

A: All substitute parts use LFPAK56 or Power-SO8 package designations, which are surface mount configurations compatible with the original LFPAK package footprint. PCB layout and thermal management considerations should be evaluated based on specific application requirements and power dissipation levels.

Q: Do all substitute parts meet the same compliance standards as HAT2116H-EL-E?

A: Yes. All three substitute parts carry RoHS3 compliance, REACH Unaffected status, MSL 1 (Unlimited) rating, and Active product status. Regulatory and environmental compliance is equivalent across all options.

Q: Which substitute offers the lowest switching losses?

A: The PSMN013-30YLC,115 exhibits the lowest gate charge at 8.3 nC compared to 26 nC in the original part and 100-105 nC in the higher-current alternatives. Lower gate charge reduces switching losses in high-frequency applications.

Q: What is the thermal advantage of using PSMN1R2-25YL,115 or PSMN1R3-30YL,115?

A: Both parts support 121W maximum power dissipation compared to 15W in the HAT2116H-EL-E. This 8-fold increase in thermal capacity enables operation in higher-power applications or provides thermal margin in existing designs. Operating temperature range extends to -55°C minimum in both substitutes.

Q: Can HAT2116H-EL-E be substituted in applications designed for PSMN1R2-25YL,115 or PSMN1R3-30YL,115?

A: No. The HAT2116H-EL-E has lower current capacity (30A versus 100A) and reduced power dissipation (15W versus 121W). Substitution in the reverse direction would be inadequate for applications requiring the higher specifications of the Nexperia parts.

Q: Are there any gate drive voltage differences between these parts?

A: All parts specify ±20V maximum gate-source voltage (Vgs Max). Gate drive voltage compatibility is equivalent across all options. Drive voltage thresholds vary slightly, with PSMN013-30YLC,115 at 1.95V and PSMN1R2/1R3 series at 2.15V, but both are within standard gate driver output ranges.