HAT2092R-EL-E Equivalent & Substitute Parts

Part Overview

The HAT2092R-EL-E is a dual N-channel MOSFET array manufactured by Renesas Electronics Corporation, designed for surface mount applications in 8-SOIC packaging. This logic level gate device operates at 30V drain-to-source voltage with 11A continuous drain current and 3W maximum power dissipation. The component is classified as Active product status and is RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Substitute parts are identified when equivalent electrical and mechanical parameters align within the allowed specifications for this MOSFET category, enabling direct functional replacement in circuit designs while maintaining performance requirements.

Substiute Parts

HAT2092R-EL-E

Renesas Electronics CorporationIn Stock: 16534HAT2092R-EL-E Datasheet

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DMG4800LSD-13

Diodes IncorporatedIn Stock: 45460DMG4800LSD-13 Datasheet

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DMN3033LSD-13

Diodes IncorporatedIn Stock: 26422DMN3033LSD-13 Datasheet

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IRF8313TRPBF

Infineon TechnologiesIn Stock: 23105IRF8313TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the HAT2092R-EL-E are qualified based on the following criteria:

Electrical Compatibility Parameters:

• Drain to Source Voltage (Vdss): 30V (exact match required)
• Configuration: 2 N-Channel (Dual) (exact match required)
• FET Feature: Logic Level Gate (exact match required)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) (exact match required)
• Mounting Type: Surface Mount (exact match required)

Performance Parameters (within allowed tolerance):

• Current - Continuous Drain (Id) @ 25°C: 6.9A to 11A
• Rds On (Max) @ Id, Vgs: 15.5mOhm to 20mOhm
• Power - Max: 1.17W to 3W
• Operating Temperature (TJ): -55°C to 175°C (minimum -55°C or higher; maximum 150°C or higher)

Compliance Parameters:

• RoHS Status: ROHS3 Compliant (required)
• Moisture Sensitivity Level (MSL): 1 (Unlimited) (required)
• REACH Status: REACH Unaffected (required)

Three substitute parts meet these criteria: DMG4800LSD-13 (Diodes Incorporated), DMN3033LSD-13 (Diodes Incorporated), and IRF8313TRPBF (Infineon Technologies).

Parameter Comparison

Engineering Selection Recommendations

Primary Selection: DMG4800LSD-13 (Diodes Incorporated)

The DMG4800LSD-13 is the preferred substitute for new designs. This part maintains Active product status, ensuring long-term availability and manufacturing support. It meets all electrical and mechanical compatibility requirements with identical Vdss (30V), configuration (2 N-Channel), and package specifications (8-SOIC). The continuous drain current of 7.5A is lower than the HAT2092R-EL-E (11A), requiring circuit-level current capacity verification. All compliance certifications (RoHS3, MSL 1, REACH Unaffected) are equivalent.

Secondary Selection: DMN3033LSD-13 (Diodes Incorporated)

The DMN3033LSD-13 is an alternative substitute with Active product status. This part provides 6.9A continuous drain current and 2W maximum power dissipation. The Rds On specification is 20mOhm, slightly higher than the primary part. This substitute is suitable for applications where the lower current rating is acceptable and thermal management is adequate.

Tertiary Selection: IRF8313TRPBF (Infineon Technologies)

The IRF8313TRPBF is classified as Not For New Designs and is not recommended for new circuit development. This part carries the HEXFET® series designation and provides 9.7A continuous drain current with superior operating temperature range (-55°C to 175°C). Existing designs currently using this part may continue operation, but migration to an Active status substitute is advised for long-term reliability and supply chain stability.

Compliance Verification:

All three substitute parts are RoHS3 compliant, MSL 1 (Unlimited), and REACH Unaffected, matching the original HAT2092R-EL-E specifications. No additional environmental or regulatory considerations apply to substitution.

Frequently Asked Questions (FAQ)

Q: Can the DMG4800LSD-13 directly replace the HAT2092R-EL-E in all applications?

A: The DMG4800LSD-13 is mechanically and electrically compatible in terms of package, pinout, and voltage rating. However, the continuous drain current is 7.5A compared to 11A for the HAT2092R-EL-E. Circuit designs must verify that the lower current rating does not exceed application requirements. Thermal management and power dissipation (1.17W vs. 3W) must also be evaluated.

Q: What is the difference between the two Diodes Incorporated substitutes?

A: Both DMG4800LSD-13 and DMN3033LSD-13 are Active status parts from Diodes Incorporated with identical package and voltage specifications. The DMG4800LSD-13 offers higher continuous drain current (7.5A vs. 6.9A) and lower maximum power dissipation (1.17W vs. 2W). The DMN3033LSD-13 has slightly higher Rds On (20mOhm vs. 16mOhm). Selection depends on specific current and thermal requirements of the application.

Q: Why is the IRF8313TRPBF marked as "Not For New Designs"?

A: The IRF8313TRPBF carries a "Not For New Designs" product status designation from Infineon Technologies. This indicates the manufacturer is not recommending this part for new circuit development. While the part remains available and functional, new designs should prioritize Active status alternatives such as the DMG4800LSD-13 or DMN3033LSD-13 to ensure long-term supply chain support and manufacturing continuity.

Q: Are all substitute parts available in the same packaging options?

A: All three substitute parts are available in 8-SOIC (0.154", 3.90mm Width) surface mount packaging, matching the HAT2092R-EL-E. Packaging options differ by supplier: DMG4800LSD-13 is available in Cut Tape (CT) & Digi-Reel®; DMN3033LSD-13 is available in Tape & Reel (TR); IRF8313TRPBF is available in Cut Tape (CT) & Digi-Reel®. Verify packaging availability with your supplier for production requirements.

Q: Do all substitute parts meet the same compliance standards?

A: Yes. All three substitute parts are RoHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, and are REACH Unaffected. Compliance certifications are equivalent to the HAT2092R-EL-E, eliminating regulatory concerns for substitution.

Q: What is the impact of lower gate charge in substitute parts?

A: The DMG4800LSD-13, DMN3033LSD-13, and IRF8313TRPBF all exhibit lower gate charge (Qg) compared to the HAT2092R-EL-E (8.56nC, 13nC, and 9nC respectively vs. 22nC). Lower gate charge reduces switching losses and improves gate drive efficiency. This is a beneficial characteristic for high-frequency switching applications and does not present a compatibility concern.

Q: How does input capacitance affect circuit performance?

A: The HAT2092R-EL-E has input capacitance (Ciss) of 1400pF at 10V, while substitutes range from 725pF to 798pF. Lower input capacitance in substitute parts reduces gate drive current requirements and improves switching speed. This difference is advantageous for gate driver circuits and does not create substitution barriers.

Q: Can I use a substitute part with lower continuous drain current in a high-current application?

A: No. If the application requires continuous drain current exceeding the substitute part's rating, the part will exceed thermal limits and may fail. The DMG4800LSD-13 (7.5A) and DMN3033LSD-13 (6.9A) are suitable only for applications where continuous drain current does not exceed their respective ratings. Circuit redesign or thermal management enhancement may be required.