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H11N2 Equivalent & Substitute Parts
Part Overview
The H11N2 is a logic output optoisolator manufactured by onsemi, designed for applications requiring galvanic isolation with Schmitt trigger output capability. This component features a 7500Vrms isolation voltage rating, 5MHz data rate, and open collector output configuration in a 6-DIP through-hole package. The H11N2 is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing system support and new design implementations.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | H11N2 |
| Manufacturer | onsemi |
| Category | Optoisolators |
| Number of Channels | 1 |
| Voltage - Isolation | 7500Vrms |
| Output Type | Open Collector |
| Current - Output / Channel | 50 mA |
| Data Rate | 5MHz |
| Propagation Delay tpLH / tpHL (Max) | 330ns / 330ns |
| Voltage - Forward (Vf) (Typ) | 1.4V |
| Current - DC Forward (If) (Max) | 5mA |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitution of the H11N2 is determined by the following critical electrical and mechanical parameters:
Mandatory Matching Parameters:
- Number of Channels: 1
- Output Type: Open Collector
- Current - Output / Channel: 50 mA
- Data Rate: 5MHz
- Propagation Delay tpLH / tpHL (Max): 330ns / 330ns
- Package / Case: 6-DIP (0.300", 7.62mm)
- Mounting Type: Through Hole
Allowable Variation Parameters:
- Voltage - Isolation: The H11N2 specifies 7500Vrms. Substitute parts with lower isolation voltage ratings (such as 4170Vrms) are acceptable where system isolation requirements do not mandate the full 7500Vrms specification.
- Voltage - Forward (Vf) and Current - DC Forward (If): Minor variations within typical operating ranges are acceptable.
- Product Status: Active substitute parts are preferred for obsolete originals to ensure long-term availability.
The H11N1M meets all mandatory matching parameters and represents a direct functional substitute, with the trade-off of reduced isolation voltage (4170Vrms versus 7500Vrms) and improved product status (Active versus Obsolete).
Parameter Comparison
| Parameter | H11N2 (Main Part) | H11N1M (Substitute) |
|---|---|---|
| Manufacturer Part Number | H11N2 | H11N1M |
| Manufacturer | onsemi | onsemi |
| Number of Channels | 1 | 1 |
| Voltage - Isolation | 7500Vrms | 4170Vrms |
| Output Type | Open Collector | Open Collector |
| Current - Output / Channel | 50 mA | 50 mA |
| Data Rate | 5MHz | 5MHz |
| Propagation Delay tpLH / tpHL (Max) | 330ns / 330ns | 330ns / 330ns |
| Voltage - Forward (Vf) (Typ) | 1.4V | 1.4V |
| Current - DC Forward (If) (Max) | 5mA | 30mA |
| Voltage - Supply | Not specified | 4V ~ 15V |
| Operating Temperature | Not specified | -40°C ~ 85°C |
| Package / Case | 6-DIP (0.300", 7.62mm) | 6-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole | Through Hole |
| Product Status | Obsolete | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant |
Engineering Selection Recommendations
H11N1M as Primary Substitute:
The H11N1M is the direct functional equivalent for the obsolete H11N2. Both components share identical channel count, output type, output current rating, data rate, and propagation delay specifications. The physical package and mounting type are identical, enabling direct board-level substitution without layout modifications.
The primary design consideration is isolation voltage: the H11N1M provides 4170Vrms isolation versus the H11N2's 7500Vrms. This substitution is valid for applications where the system isolation requirement does not exceed 4170Vrms. For applications requiring the full 7500Vrms isolation specification, alternative parts outside the provided substitute list must be evaluated.
Compliance Advantages:
The H11N1M carries Active product status, ensuring continued manufacturing and supply availability. The H11N1M is ROHS3 compliant, whereas the H11N2 is RoHS non-compliant. For new designs or systems subject to RoHS regulations, the H11N1M is the appropriate selection.
Electrical Compatibility:
The H11N1M specifies a maximum DC forward current of 30mA (versus 5mA for the H11N2) and defined supply voltage range of 4V to 15V with operating temperature range of -40°C to 85°C. These specifications provide improved operational clarity and margin for the substitute part.
Frequently Asked Questions (FAQ)
Q: Can the H11N1M directly replace the H11N2 in existing designs?
A: Yes, for applications where the system isolation requirement is 4170Vrms or lower. The H11N1M matches all critical electrical parameters (channel count, output type, output current, data rate, propagation delay) and physical package specifications. Direct board-level substitution is possible without circuit modifications.
Q: What is the key difference between H11N2 and H11N1M?
A: The primary difference is isolation voltage rating: H11N2 provides 7500Vrms while H11N1M provides 4170Vrms. Both components are single-channel, open-collector optoisolators with identical 5MHz data rate and 330ns propagation delay specifications. The H11N1M is Active product status versus the H11N2's Obsolete status.
Q: Is the H11N1M suitable for high-voltage isolation applications?
A: The H11N1M is rated for 4170Vrms isolation. Applications requiring isolation voltage exceeding this specification require evaluation of alternative optoisolator products not included in this substitute list.
Q: Are there package compatibility concerns with the H11N1M?
A: No. Both the H11N2 and H11N1M use identical 6-DIP (0.300", 7.62mm) through-hole packages. Pin-to-pin compatibility is maintained, and no board layout modifications are required.
Q: What is the RoHS compliance status of these parts?
A: The H11N2 is RoHS non-compliant. The H11N1M is ROHS3 compliant. For applications subject to RoHS regulations, the H11N1M is the appropriate selection.
Q: Can the H11N1M handle the same output current as the H11N2?
A: Yes. Both parts are rated for 50 mA output current per channel. The H11N1M specifies a maximum DC forward current of 30mA, which is higher than the H11N2's 5mA specification, providing additional design margin.
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