H11L3 Equivalent & Substitute Parts

Part Overview

The H11L3 is a logic output optoisolator manufactured by onsemi, featuring Schmitt trigger functionality with 1MHz data rate and open collector output configuration. This component provides 5300Vrms isolation in a 6-DIP through-hole package with 1 channel and 50mA output current capability. The H11L3 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing system support and new design implementations.

Substiute Parts

H11L3
onsemiIn Stock: 3244H11L3 Datasheet
H11L3
Current Part
H11L3M
onsemiIn Stock: 3717H11L3M Datasheet
H11L3M
Direct
6N136
onsemiIn Stock: 501706N136 Datasheet
6N136
Similar
H11L3
onsemiIn Stock: 3244H11L3 Datasheet
H11L3
Similar

Key Parameters

Parameter Value
Manufacturer Part Number H11L3
Manufacturer onsemi
Category Optoisolators
Number of Channels 1
Voltage - Isolation 5300Vrms
Input Type DC
Output Type Open Collector
Current - Output / Channel 50 mA
Data Rate 1MHz
Current - DC Forward (If) (Max) 5mA
Mounting Type Through Hole
Package / Case 6-DIP (0.300", 7.62mm)
Product Status Obsolete
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution eligibility for the H11L3 is determined by the following critical parameters: number of channels (1), output type (open collector), mounting type (through hole), package configuration (6-DIP), and isolation voltage rating (minimum 2500Vrms). The H11L3 operates at 1MHz data rate with 50mA output current and 5mA maximum forward current.

Substitute parts must maintain compatibility across these core electrical and mechanical specifications. The H11L3M represents a direct manufacturer substitute with identical channel count, output type, package, and mounting configuration. The 6N136 is classified as a similar substitute due to differences in output type (transistor with base versus open collector), package size (8-DIP versus 6-DIP), and lower isolation voltage (2500Vrms versus 5300Vrms), requiring application-level evaluation for compatibility.

Parameter Comparison

Parameter H11L3 H11L3M 6N136
Manufacturer onsemi onsemi onsemi
Number of Channels 1 1 1
Voltage - Isolation 5300Vrms 4170Vrms 2500Vrms
Input Type DC DC DC
Output Type Open Collector Open Collector Transistor with Base
Current - Output / Channel 50 mA 50 mA 8 mA
Data Rate 1MHz 1MHz Not specified
Current - DC Forward (If) (Max) 5mA 30mA 25 mA
Mounting Type Through Hole Through Hole Through Hole
Package / Case 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Product Status Obsolete Active Obsolete
RoHS Status RoHS non-compliant ROHS3 Compliant Not specified
Voltage - Supply Not specified 3V ~ 15V Not specified
Operating Temperature Not specified -40°C ~ 85°C -55°C ~ 100°C

Engineering Selection Recommendations

The H11L3M is the primary substitute for the H11L3. Both components share identical channel count, output type (open collector), package configuration (6-DIP), and data rate (1MHz). The H11L3M is currently in active production status, whereas the H11L3 is obsolete. The H11L3M provides ROHS3 compliance and specified operating temperature range (-40°C to 85°C), addressing regulatory and environmental requirements not documented for the original H11L3. The isolation voltage of the H11L3M (4170Vrms) is lower than the H11L3 (5300Vrms); applications requiring the full 5300Vrms isolation rating must evaluate this reduction against system requirements.

The 6N136 is a secondary substitute option with significant design differences. The 6N136 features transistor with base output configuration rather than open collector, operates at lower isolation voltage (2500Vrms), and provides reduced output current (8mA versus 50mA). The 6N136 is also classified as obsolete. Selection of the 6N136 requires circuit redesign to accommodate the different output stage topology and lower current capability.

For new designs and ongoing support of systems currently using the H11L3, the H11L3M is the recommended substitute due to active product status, regulatory compliance, and minimal design modification requirements.

Frequently Asked Questions (FAQ)

Q: Can the H11L3M directly replace the H11L3 without circuit modification?

A: The H11L3M maintains identical channel count, output type (open collector), package (6-DIP), and data rate (1MHz) as the H11L3. The primary difference is isolation voltage: H11L3M provides 4170Vrms versus H11L3 at 5300Vrms. Direct replacement is possible if the application isolation requirement does not exceed 4170Vrms. Applications requiring 5300Vrms isolation must evaluate the voltage reduction against system specifications.

Q: What are the key differences between the H11L3M and 6N136?

A: The H11L3M and 6N136 differ in multiple critical parameters. The H11L3M features open collector output with 50mA current capability and 4170Vrms isolation in a 6-DIP package. The 6N136 features transistor with base output with 8mA current capability and 2500Vrms isolation in an 8-DIP package. These differences require circuit redesign for 6N136 substitution, including output stage reconfiguration and current limiting adjustments.

Q: Is the H11L3M suitable for applications requiring RoHS compliance?

A: Yes. The H11L3M is ROHS3 compliant, whereas the original H11L3 is RoHS non-compliant. The H11L3M is appropriate for applications with RoHS compliance requirements.

Q: What is the operating temperature range for the H11L3M?

A: The H11L3M operates across -40°C to 85°C. The original H11L3 does not specify an operating temperature range in available documentation.

Q: Can the 6N136 be used as a substitute in high-current applications?

A: No. The 6N136 provides 8mA maximum output current per channel, significantly lower than the H11L3 (50mA) and H11L3M (50mA). Applications requiring output currents above 8mA cannot use the 6N136 without additional output stage buffering.

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