H11F1 Optoisolator MOSFET Output Equivalent & Substitute Parts

Part Overview

The H11F1 is an optoisolator with MOSFET output manufactured by onsemi, designed for high-voltage isolation applications. It features a 5300Vrms isolation rating and operates in the 6-DIP through-hole package format. The H11F1 is classified as obsolete, making identification of suitable substitute components essential for ongoing system support and new design implementations where this isolation topology is required.

Substiute Parts

H11F1
onsemiIn Stock: 2033H11F1 Datasheet
H11F1
Current Part
H11F1M
onsemiIn Stock: 1245H11F1M Datasheet
H11F1M
Direct

Key Parameters

Parameter Value
Manufacturer Part Number H11F1
Manufacturer onsemi
Category Optoisolators
Package / Case 6-DIP (0.300", 7.62mm)
Number of Channels 1
Voltage - Isolation 5300Vrms
Output Type MOSFET
Voltage - Output (Max) 30V
Voltage - Forward (Vf) (Typ) 1.3V
Current - DC Forward (If) (Max) 60 mA
Turn On / Turn Off Time (Typ) 25µs, 25µs (Max)
Operating Temperature -55°C ~ 100°C
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the H11F1 is determined by the following critical parameters that must remain compatible:

Package Compatibility: Both the main part and substitute must use the 6-DIP (0.300", 7.62mm) through-hole package to ensure direct board-level compatibility without layout modifications.

Isolation Voltage: The substitute must maintain isolation voltage at or above the application requirement. The H11F1 provides 5300Vrms isolation; substitutes with lower isolation ratings may be acceptable only if system design permits reduced isolation margins.

Output Configuration: The substitute must feature MOSFET output topology to maintain functional equivalence in switching and control applications.

Electrical Characteristics: Input type (DC), output voltage maximum (30V), forward voltage (1.3V typical), and forward current maximum (60 mA) establish the operational envelope for signal conditioning and load driving capability.

Switching Performance: Turn-on and turn-off times define circuit response characteristics and must be evaluated against system timing requirements.

Parameter Comparison

Parameter H11F1 (Main Part) H11F1M (Substitute)
Manufacturer onsemi onsemi
Package / Case 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm)
Number of Channels 1 1
Voltage - Isolation 5300Vrms 4170Vrms
Output Type MOSFET MOSFET
Voltage - Output (Max) 30V 30V
Voltage - Forward (Vf) (Typ) 1.3V 1.3V
Current - DC Forward (If) (Max) 60 mA 60 mA
Turn On / Turn Off Time (Typ) 25µs, 25µs (Max) 45µs, 45µs (Max)
Operating Temperature -55°C ~ 100°C -40°C ~ 100°C
Mounting Type Through Hole Through Hole
Product Status Obsolete Active

Engineering Selection Recommendations

The H11F1M is the direct substitute for the H11F1 within the onsemi product family. Both components share identical package geometry, channel configuration, output topology, and primary electrical characteristics.

Isolation Voltage Consideration: The H11F1M provides 4170Vrms isolation compared to the H11F1's 5300Vrms. This represents a 1130Vrms reduction in isolation margin. Substitution is valid only when system design specifications permit operation at the lower isolation rating.

Switching Speed Consideration: The H11F1M exhibits slower switching performance with 45µs turn-on and turn-off times versus the H11F1's 25µs. Applications with strict timing requirements must evaluate whether this 20µs increase in switching delay is acceptable.

Temperature Range Consideration: The H11F1M operates from -40°C to 100°C, compared to the H11F1's -55°C to 100°C range. Applications requiring operation below -40°C cannot use the H11F1M.

Product Status: The H11F1M is active and in production, ensuring long-term availability and supply continuity compared to the obsolete H11F1.

Compliance: The H11F1M is RoHS3 compliant, supporting modern manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can the H11F1M directly replace the H11F1 in existing designs?

A: Direct pin-compatible replacement is possible due to identical 6-DIP package geometry. However, functional compatibility depends on system tolerance for reduced isolation voltage (4170Vrms vs. 5300Vrms), increased switching delay (45µs vs. 25µs), and narrower operating temperature range (-40°C to 100°C vs. -55°C to 100°C).

Q: What is the primary difference between H11F1 and H11F1M?

A: The H11F1M is the active production variant with lower isolation voltage rating, slower switching characteristics, and narrower temperature range. The H11F1 is obsolete. Both share identical package, channel count, output type, and maximum voltage/current specifications.

Q: Are there any compliance differences between these parts?

A: The H11F1M is RoHS3 compliant and carries active product status. The H11F1 is obsolete. Both are REACH unaffected and carry EAR99 ECCN classification.

Q: Which part should be selected for new designs?

A: The H11F1M should be selected for new designs as it is the active production part. The H11F1 is obsolete and should not be specified for new applications.

Q: What are the critical parameters for substitution evaluation?

A: Package compatibility (6-DIP), isolation voltage rating, MOSFET output topology, switching speed (turn-on/turn-off time), operating temperature range, and forward voltage/current characteristics determine substitution validity.

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