H11D1 Optoisolator Equivalent & Substitute Parts

Part Overview

The H11D1 is a 6-DIP optoisolator transistor with base output manufactured by onsemi, featuring 5300Vrms isolation voltage and single-channel configuration. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The H11D1 serves applications requiring galvanic isolation with transistor output capability in through-hole mounting configurations.

Substiute Parts

H11D1
onsemiIn Stock: 5196H11D1 Datasheet
H11D1
Current Part
H11D1M
onsemiIn Stock: 15708H11D1M Datasheet
H11D1M
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H11D1
onsemiIn Stock: 5196H11D1 Datasheet
H11D1
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H11D1
onsemiIn Stock: 5196H11D1 Datasheet
H11D1
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H11D1
onsemiIn Stock: 5196H11D1 Datasheet
H11D1
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Key Parameters

Parameter Value
Manufacturer Part Number H11D1
Manufacturer onsemi
Category Optoisolators
Package / Case 6-DIP (0.300", 7.62mm)
Voltage - Isolation 5300Vrms
Number of Channels 1
Output Type Transistor with Base
Current Transfer Ratio (Min) 20% @ 10mA
Voltage - Output (Max) 300V
Current - Output / Channel 100mA
Operating Temperature -55°C ~ 100°C
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution eligibility for the H11D1 is determined by the following critical parameters:

  • Package compatibility: 6-DIP (0.300", 7.62mm) form factor for direct board-level replacement
  • Isolation voltage: Minimum 4170Vrms to maintain electrical isolation requirements
  • Output configuration: Transistor with base output for circuit interface compatibility
  • Single-channel architecture: One isolated channel per device
  • DC input type: Direct current signal isolation
  • Current handling: 100mA output current per channel
  • Mounting method: Through-hole technology for PCB integration

The H11D1M qualifies as a direct substitute based on matching all critical parameters. Both parts share identical package geometry, output stage configuration, and electrical interface specifications. The primary distinction is isolation voltage rating (5300Vrms for H11D1 versus 4170Vrms for H11D1M) and product status (obsolete versus active).

Parameter Comparison

Parameter H11D1 H11D1M
Manufacturer onsemi onsemi
Voltage - Isolation 5300Vrms 4170Vrms
Number of Channels 1 1
Current Transfer Ratio (Min) 20% @ 10mA 20% @ 10mA
Turn On / Turn Off Time (Typ) 5µs, 5µs 5µs, 5µs
Input Type DC DC
Output Type Transistor with Base Transistor with Base
Voltage - Output (Max) 300V 300V
Current - Output / Channel 100mA 100mA
Voltage - Forward (Vf) (Typ) 1.15V 1.15V
Current - DC Forward (If) (Max) 80mA 80mA
Vce Saturation (Max) 400mV 400mV
Operating Temperature -55°C ~ 100°C -40°C ~ 100°C
Package / Case 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The H11D1M represents the primary substitute for the obsolete H11D1. Both components maintain identical electrical interface specifications and package geometry, enabling direct replacement in existing PCB designs. The H11D1M carries active product status with ROHS3 compliance certification, providing long-term supply assurance and regulatory alignment for new production.

The isolation voltage differential (4170Vrms for H11D1M versus 5300Vrms for H11D1) requires circuit-level evaluation. Applications operating at isolation voltages below 4170Vrms can implement H11D1M without modification. Designs requiring 5300Vrms isolation must confirm alternative component availability through the manufacturer or authorized distributors.

Both parts maintain REACH Unaffected status and EAR99 export classification, ensuring consistent regulatory compliance across substitution scenarios.

Frequently Asked Questions (FAQ)

Q: Can H11D1M directly replace H11D1 in existing designs?

A: Yes, for applications operating at isolation voltages of 4170Vrms or below. The H11D1M shares identical package geometry (6-DIP), output configuration (transistor with base), current handling (100mA), and switching characteristics (5µs turn-on/off time). Direct PCB-level substitution is possible without circuit redesign.

Q: What is the isolation voltage difference between H11D1 and H11D1M?

A: H11D1 provides 5300Vrms isolation, while H11D1M provides 4170Vrms isolation. This 1130Vrms difference must be evaluated against circuit isolation requirements. If the design margin permits operation at 4170Vrms, H11D1M is suitable. Higher isolation requirements necessitate alternative component sourcing.

Q: Are there packaging differences between H11D1 and H11D1M?

A: No. Both components use 6-DIP (0.300", 7.62mm) through-hole packaging. Pin configuration and board footprint are identical, enabling direct mechanical and electrical substitution.

Q: What is the operating temperature range difference?

A: H11D1 operates from -55°C to 100°C, while H11D1M operates from -40°C to 100°C. Applications requiring operation below -40°C must use H11D1 or identify alternative components. Standard industrial temperature ranges (-40°C to 85°C) are supported by both parts.

Q: Does H11D1M have better compliance status than H11D1?

A: H11D1M carries ROHS3 compliance certification and active product status, compared to H11D1's obsolete classification. For new designs and production continuity, H11D1M provides superior long-term availability and regulatory alignment.

Q: Are the electrical characteristics identical between H11D1 and H11D1M?

A: Yes. Both parts maintain 20% minimum current transfer ratio at 10mA, 300V maximum output voltage, 100mA output current, 1.15V typical forward voltage, and 400mV maximum Vce saturation. Switching performance (5µs turn-on and turn-off time) is identical.

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