H11AV2TM Equivalent & Substitute Parts

Part Overview

The H11AV2TM is an optoisolator transistor with base output manufactured by onsemi, designed for high-voltage isolation applications. This component features a single channel with 7500Vpk isolation rating and transistor output with base connection in a 6-DIP through-hole package. The H11AV2TM is classified as obsolete, making identification of suitable substitute components essential for ongoing system support and new design implementations.

Substiute Parts

H11AV2TM

onsemiIn Stock: 793H11AV2TM Datasheet

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H11AV1AM

onsemiIn Stock: 2137H11AV1AM Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the H11AV2TM is determined by the following critical parameters:

• Number of Channels: Must be 1 channel
• Output Type: Must be Transistor with Base
• Mounting Type: Must be Through Hole
• Package Type: Must be 6-DIP
• Voltage - Isolation: Minimum 4170Vrms (equivalent to 5900Vpk) acceptable for applications not requiring the full 7500Vpk rating
• Voltage - Output (Max): Must be 70V or greater
• Vce Saturation (Max): Must be 400mV or less
• Current - DC Forward (If) (Max): Must be 60 mA or greater

The H11AV1AM qualifies as a substitute based on these parameters, though with reduced isolation voltage specification.

Parameter Comparison

Engineering Selection Recommendations

The H11AV1AM is the qualified substitute for the H11AV2TM based on functional equivalence in channel count, output type, package configuration, and electrical ratings. Key considerations for selection:

Product Status: The H11AV1AM holds Active product status, ensuring continued availability and manufacturing support, whereas the H11AV2TM is Obsolete.

Compliance: The H11AV1AM is ROHS3 compliant, meeting current regulatory requirements. The H11AV2TM is RoHS non-compliant.

Isolation Voltage: The H11AV1AM provides 4170Vrms isolation, which is lower than the H11AV2TM's 7500Vpk specification. Selection of this substitute is appropriate only for applications where the reduced isolation voltage meets system requirements.

Current Transfer Ratio: The H11AV1AM demonstrates superior current transfer ratio performance (100% minimum, 300% maximum) compared to the H11AV2TM (50% minimum), providing improved switching characteristics.

Package Dimensions: The H11AV1AM uses a 6-DIP package with 0.300" (7.62mm) pitch, compared to the H11AV2TM's 0.400" (10.16mm) pitch. PCB layout compatibility must be verified before substitution.

Frequently Asked Questions (FAQ)

Q: Can the H11AV1AM directly replace the H11AV2TM in all applications?

A: Direct replacement is possible only in applications where the isolation voltage requirement does not exceed 4170Vrms. Applications requiring the full 7500Vpk isolation of the H11AV2TM cannot use the H11AV1AM as a substitute.

Q: What is the difference in package pitch between these parts?

A: The H11AV2TM uses a 6-DIP package with 0.400" (10.16mm) pitch, while the H11AV1AM uses 0.300" (7.62mm) pitch. PCB footprints are not interchangeable without layout modification.

Q: Why is the H11AV1AM recommended despite lower isolation voltage?

A: The H11AV1AM is the only onsemi optoisolator transistor with base output in 6-DIP configuration currently in active production. For applications not requiring 7500Vpk isolation, it provides a compliant, supported alternative to the obsolete H11AV2TM.

Q: Are there compliance differences between these parts?

A: Yes. The H11AV1AM is ROHS3 compliant with specified operating temperature range (-40°C ~ 100°C), while the H11AV2TM is RoHS non-compliant with unspecified operating temperature. The H11AV1AM meets current regulatory standards.

Q: How do the current transfer ratios compare?

A: The H11AV1AM has a minimum current transfer ratio of 100% at 10mA, compared to 50% for the H11AV2TM. This indicates superior switching efficiency and faster response in the substitute part.