H11AV2M Optoisolator Equivalent & Substitute Parts

Part Overview

The H11AV2M is an optoisolator transistor with base output manufactured by onsemi, rated for 7500Vpk isolation voltage in a 6-DIP through-hole package. This component is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The H11AV2M provides galvanic isolation with a single-channel transistor output configuration suitable for high-voltage switching applications.

Key Parameters

Parameter	H11AV2M
Manufacturer	onsemi
Product Status	Obsolete
Voltage - Isolation	7500Vpk
Number of Channels	1
Current Transfer Ratio (Min)	50% @ 10mA
Output Type	Transistor with Base
Voltage - Output (Max)	70V
Vce Saturation (Max)	400mV
Operating Temperature	-40°C ~ 100°C
Package / Case	6-DIP (0.300", 7.62mm)
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the H11AV2M is determined by the following criteria:

Primary Compatibility Requirements:

Single-channel optoisolator configuration
Transistor output with base connection
6-DIP through-hole package (0.300", 7.62mm)
DC input type
Operating temperature range compatibility (-40°C minimum or lower)
Isolation voltage rating of 5000Vrms or higher (equivalent to 7071Vpk minimum)

Secondary Compatibility Factors:

Maximum output voltage of 70V or higher
Current transfer ratio minimum of 50% @ 10mA or higher
Vce saturation maximum of 400mV or lower
Forward voltage (Vf) within 1.18V to 1.4V range
Maximum DC forward current (If) of 60mA

All listed substitute parts meet the primary compatibility requirements. Variations in secondary parameters indicate application-specific suitability based on circuit design constraints.

Parameter Comparison

Parameter	H11AV2M	H11AV1M	CNY17-2-000E	CQY80N	H11AV2X
Manufacturer	onsemi	onsemi	Broadcom Limited	Vishay Semiconductor Opto Division	Isocom Components 2004 LTD
Product Status	Obsolete	Active	Active	Active	Active
Voltage - Isolation	7500Vpk	4170Vrms	5000Vrms	5000Vrms	5300Vrms
Number of Channels	1	1	1	1	1
Current Transfer Ratio (Min)	50% @ 10mA	100% @ 10mA	63% @ 10mA	50% @ 10mA	50% @ 10mA
Output Type	Transistor with Base	Transistor with Base	Transistor with Base	Transistor with Base	Transistor with Base
Voltage - Output (Max)	70V	70V	70V	32V	70V
Vce Saturation (Max)	400mV	400mV	300mV	300mV	400mV
Operating Temperature	-40°C ~ 100°C	-40°C ~ 100°C	-55°C ~ 100°C	-55°C ~ 100°C	-55°C ~ 100°C
Package / Case	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Input Type	DC	DC	DC	DC	DC
Voltage - Forward (Vf) (Typ)	1.18V	1.18V	1.4V	1.25V	1.2V
Current - DC Forward (If) (Max)	60mA	60mA	60mA	60mA	60mA
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

H11AV1M (onsemi): Active product status with same manufacturer lineage. Meets all primary compatibility requirements. Lower isolation voltage rating (4170Vrms) requires circuit-level verification if isolation margin is critical. Higher current transfer ratio (100% minimum) provides improved switching performance. Identical package and output voltage specifications.

CNY17-2-000E (Broadcom Limited): Active product with ROHS3 compliance. Isolation voltage of 5000Vrms meets minimum requirements. Improved Vce saturation (300mV) and faster rise/fall times (5µs) support higher-frequency switching applications. Extended operating temperature range (-55°C) provides broader environmental coverage.

CQY80N (Vishay Semiconductor Opto Division): Active product with ROHS3 compliance and extended temperature range (-55°C). Faster switching times (11µs on, 7µs off) and improved rise/fall times (7µs, 6.7µs). Maximum output voltage limited to 32V requires verification against circuit requirements. Current output per channel limited to 50mA.

H11AV2X (Isocom Components 2004 LTD): Active product with ROHS3 compliance. Isolation voltage of 5300Vrms provides adequate margin. Fastest rise/fall times (2µs) among substitutes. Extended operating temperature range (-55°C). Current output per channel limited to 50mA. Lowest inventory availability (746 pcs).

Frequently Asked Questions (FAQ)

Q: Can H11AV1M replace H11AV2M in all applications? A: H11AV1M meets all primary compatibility requirements but has lower isolation voltage (4170Vrms vs. 7500Vpk). Substitution is valid only if circuit isolation requirements do not exceed 4170Vrms. Verify isolation margin in your specific application.

Q: What is the key difference between CNY17-2-000E and CQY80N? A: Both provide 5000Vrms isolation and 6-DIP packaging. CNY17-2-000E supports 70V maximum output voltage and 150mA output current. CQY80N is limited to 32V output voltage and 50mA output current. Select based on output voltage and current requirements.

Q: Is H11AV2X suitable for high-frequency switching? A: H11AV2X has the fastest rise/fall times (2µs) among all substitutes, making it suitable for higher-frequency applications. However, output current is limited to 50mA, which may constrain certain load-driving scenarios.

Q: Do all substitute parts have RoHS compliance? A: H11AV1M, CNY17-2-000E, CQY80N, and H11AV2X are all ROHS3 compliant. The original H11AV2M does not specify RoHS status. All parts are REACH unaffected.

Q: What is the impact of different Vce saturation values? A: Lower Vce saturation (300mV in CNY17-2-000E and CQY80N vs. 400mV in H11AV2M) reduces power dissipation in the output transistor, improving efficiency in switching applications. This is beneficial for high-frequency or high-current scenarios.

Q: Are all substitutes pin-compatible with H11AV2M? A: All substitute parts use identical 6-DIP (0.300", 7.62mm) through-hole packaging with transistor output and base connection. Pin compatibility is confirmed for direct board-level substitution without layout modification.

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