H11A5 Optoisolator Equivalent & Substitute Parts

Part Overview

The H11A5 is an optoisolator transistor with base output manufactured by onsemi, rated for 5300Vrms isolation voltage in a 6-DIP through-hole package. This component provides galvanic isolation for DC input signals with transistor output capability. The H11A5 is classified as obsolete, making identification of compatible substitute parts essential for ongoing design support and production continuity.

Substiute Parts

H11A5

onsemiIn Stock: 1282H11A5 Datasheet

Current PartRFQ

4N35-000E

Broadcom LimitedIn Stock: 39614N35-000E Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the H11A5 is determined by the following critical parameters:

• Package compatibility: 6-DIP form factor with 0.300" (7.62mm) pitch for direct PCB mounting
• Isolation voltage rating: Minimum 3550Vrms to maintain galvanic isolation in equivalent applications
• Output configuration: Transistor with base output for signal switching and amplification
• Operating temperature range: -55°C to 100°C compatibility
• Input type: DC input signal compatibility
• Maximum output voltage: 30V rating
• Mounting method: Through-hole technology

The 4N35-000E meets these substitution criteria despite differences in current transfer ratio and switching speed specifications.

Parameter Comparison

Engineering Selection Recommendations

The 4N35-000E is an active production substitute for the obsolete H11A5. Both components share identical package geometry, mounting method, and maximum output voltage specifications, enabling direct PCB replacement without layout modifications.

The 4N35-000E provides superior current transfer ratio performance (100% minimum versus 30% minimum) and lower saturation voltage (300mV versus 400mV), resulting in improved switching efficiency. The isolation voltage rating of 3550Vrms on the 4N35-000E is lower than the H11A5 specification of 5300Vrms; applications requiring the higher isolation rating must verify that 3550Vrms meets system-level isolation requirements.

The 4N35-000E holds ROHS3 compliance certification, supporting modern manufacturing and environmental standards. Both components maintain REACH Unaffected status and EAR99 export classification.

Frequently Asked Questions (FAQ)

Q: Can the 4N35-000E directly replace the H11A5 on existing PCBs?

A: Yes. Both components use identical 6-DIP package geometry with 0.300" (7.62mm) pitch, enabling direct pin-for-pin replacement without PCB modification.

Q: What is the isolation voltage difference between these parts?

A: The H11A5 provides 5300Vrms isolation, while the 4N35-000E provides 3550Vrms isolation. Applications requiring isolation voltage above 3550Vrms must verify system-level isolation requirements before substitution.

Q: Does the 4N35-000E have better switching performance?

A: The 4N35-000E specifies rise and fall times of 3µs each. The H11A5 specifies turn-on and turn-off times of 2µs each. Timing-critical applications must evaluate whether the 4N35-000E switching characteristics meet circuit requirements.

Q: What is the current transfer ratio difference?

A: The H11A5 specifies a minimum current transfer ratio of 30% at 10mA input current. The 4N35-000E specifies a minimum of 100% at 10mA input current, indicating superior optical coupling efficiency in the substitute part.

Q: Are there compliance or certification differences?

A: The 4N35-000E holds ROHS3 compliance certification. Both components maintain REACH Unaffected status and EAR99 export classification. The H11A5 is obsolete; the 4N35-000E is in active production.

Q: What is the saturation voltage difference?

A: The H11A5 specifies maximum Vce saturation of 400mV. The 4N35-000E specifies 300mV maximum, providing lower on-state voltage drop and improved power efficiency in switching applications.