H11A3VM Equivalent & Substitute Parts

Part Overview

The H11A3VM is an optoisolator transistor with base output manufactured by onsemi, designed for high-voltage isolation applications. This 6-DIP package component provides 7500Vpk isolation with a single channel and transistor output configuration. The product is currently listed as obsolete, making identification of equivalent and substitute parts essential for ongoing system support and new design implementations.

Substiute Parts

H11A3VM
onsemiIn Stock: 12179H11A3VM Datasheet
H11A3VM
Current Part
H11A1VM
onsemiIn Stock: 12367H11A1VM Datasheet
H11A1VM
Similar
H11A3X
Isocom ComponentsIn Stock: 1809H11A3X Datasheet
H11A3X
Similar

Key Parameters

Parameter Value
Manufacturer Part Number H11A3VM
Manufacturer onsemi
Category Optoisolators
Package / Case 6-DIP (0.300", 7.62mm)
Number of Channels 1
Voltage - Isolation 7500Vpk
Current Transfer Ratio (Min) 20% @ 10mA
Output Type Transistor with Base
Voltage - Output (Max) 30V
Vce Saturation (Max) 400mV
Operating Temperature -40°C ~ 100°C
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the H11A3VM are identified based on the following critical parameters that determine functional compatibility:

Mandatory Compatibility Criteria:

  • Package / Case: 6-DIP (0.300", 7.62mm) — ensures mechanical and electrical pin compatibility
  • Output Type: Transistor with Base — maintains circuit interface requirements
  • Number of Channels: 1 — preserves functional architecture
  • Mounting Type: Through Hole — supports identical PCB assembly methods
  • Voltage - Output (Max): 30V — ensures output stage compatibility
  • Vce Saturation (Max): 400mV — maintains switching performance characteristics

Substitution Parameters:

  • Voltage - Isolation: Minimum 7500Vpk (H11A3VM specification) — substitutes must meet or exceed isolation voltage
  • Current Transfer Ratio (Min): 20% @ 10mA or higher — ensures adequate signal transfer
  • Operating Temperature Range: Must encompass or match the -40°C ~ 100°C range
  • Input Type: DC — consistent signal interface

The H11A1VM and H11A3X meet these criteria with variations in isolation voltage ratings and current transfer ratios that remain within acceptable substitution parameters for this component category.

Parameter Comparison

Parameter H11A3VM (Main) H11A1VM (Substitute) H11A3X (Substitute)
Manufacturer onsemi onsemi Isocom Components
Product Status Obsolete Active Active
Package / Case 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm)
Number of Channels 1 1 1
Voltage - Isolation 7500Vpk 4170Vrms 5300Vrms
Current Transfer Ratio (Min) 20% @ 10mA 50% @ 10mA 20% @ 10mA
Turn On / Turn Off Time (Typ) 2µs, 2µs 2µs, 2µs
Input Type DC DC DC
Output Type Transistor with Base Transistor with Base Transistor with Base
Voltage - Output (Max) 30V 30V 30V
Voltage - Forward (Vf) (Typ) 1.18V 1.18V 1.2V
Current - DC Forward (If) (Max) 60 mA 60 mA 60 mA
Vce Saturation (Max) 400mV 400mV 400mV
Operating Temperature -40°C ~ 100°C -40°C ~ 100°C -55°C ~ 100°C
Mounting Type Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

H11A1VM (onsemi): This substitute is an active product with ROHS3 compliance, providing improved regulatory status compared to the obsolete H11A3VM. The H11A1VM features a higher current transfer ratio of 50% @ 10mA, which exceeds the H11A3VM minimum specification. However, the isolation voltage is rated at 4170Vrms, which is lower than the H11A3VM's 7500Vpk specification. This substitute is suitable for applications where the lower isolation voltage meets system requirements.

H11A3X (Isocom Components): This substitute is an active product with ROHS3 compliance and an extended operating temperature range of -55°C ~ 100°C, providing broader environmental coverage than the H11A3VM. The isolation voltage is rated at 5300Vrms, which is intermediate between the H11A1VM and H11A3VM specifications. The current transfer ratio matches the H11A3VM at 20% @ 10mA. This substitute is suitable for applications requiring higher isolation voltage than the H11A1VM while accepting a lower rating than the original H11A3VM specification.

Frequently Asked Questions (FAQ)

Q: Can H11A1VM directly replace H11A3VM in all applications? A: Direct replacement depends on isolation voltage requirements. The H11A1VM provides 4170Vrms isolation compared to H11A3VM's 7500Vpk. If the application circuit design specifies 7500Vpk isolation as a minimum requirement, H11A1VM is not suitable. If the actual system isolation requirement is lower, H11A1VM is compatible due to matching package, output type, and pin configuration.

Q: What is the difference between Vpk and Vrms isolation ratings? A: Vpk (peak voltage) and Vrms (root mean square voltage) are different measurement standards for isolation voltage. Direct comparison requires conversion or reference to component datasheets. The H11A3VM specifies 7500Vpk while H11A1VM specifies 4170Vrms. System isolation requirements must be evaluated against the specific measurement standard used in the application design.

Q: Is H11A3X a suitable substitute if isolation voltage is critical? A: H11A3X provides 5300Vrms isolation, which is higher than H11A1VM but lower than H11A3VM's 7500Vpk. If the application requires minimum 7500Vpk isolation, H11A3X does not meet the specification. If the actual isolation requirement is lower, H11A3X is mechanically and functionally compatible with identical 6-DIP package and transistor output configuration.

Q: Are there compliance differences between the substitutes? A: H11A1VM and H11A3X are both ROHS3 compliant active products, while H11A3VM is obsolete with no RoHS status specified. All three parts are REACH Unaffected. For new designs or systems requiring regulatory compliance documentation, H11A1VM and H11A3X provide current compliance certifications.

Q: Does the higher current transfer ratio of H11A1VM affect circuit design? A: H11A1VM provides 50% @ 10mA current transfer ratio compared to H11A3VM's 20% @ 10mA. Higher current transfer ratio means more output current is generated for a given input current. Circuit designs must account for this difference in signal transfer characteristics. Input drive requirements and output load calculations may require adjustment when substituting between these parts.

Q: Can these substitutes be used interchangeably in existing PCB designs? A: All three parts use identical 6-DIP (0.300", 7.62mm) package and Through Hole mounting, making them mechanically interchangeable on PCBs designed for this footprint. Electrical interchangeability depends on isolation voltage, current transfer ratio, and operating temperature requirements of the specific application circuit.

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