H11A2S Optoisolator Equivalent & Substitute Parts

Part Overview

The H11A2S is an optoisolator transistor with base output manufactured by onsemi, rated for 5300Vrms isolation voltage in a 6-SMD surface mount package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The H11A2S serves applications requiring galvanic isolation with transistor output capability, commonly found in power supply control circuits, motor drivers, and industrial control systems.

Key Parameters

Parameter	Value
Manufacturer Part Number	H11A2S
Manufacturer	onsemi
Category	Optoisolators
Number of Channels	1
Voltage - Isolation	5300Vrms
Current Transfer Ratio (Min)	20% @ 10mA
Output Type	Transistor with Base
Voltage - Output (Max)	30V
Voltage - Forward (Vf) (Typ)	1.18V
Current - DC Forward (If) (Max)	100 mA
Vce Saturation (Max)	400mV
Turn On / Turn Off Time (Typ)	2µs, 2µs
Operating Temperature	-55°C ~ 100°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Gull Wing
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution for the H11A2S optoisolator is determined by the following critical parameters:

Isolation Voltage: Minimum 5300Vrms required for direct replacement
Output Configuration: Transistor with base output mandatory
Number of Channels: Single channel only
Package Type: 6-SMD, Gull Wing surface mount
Current Transfer Ratio: Minimum 20% @ 10mA
Output Voltage Rating: 30V maximum
Operating Temperature Range: Must support -55°C to 100°C minimum

The substitute parts identified meet these core electrical and mechanical requirements. Parts with lower isolation voltage ratings (such as 4170Vrms) are listed as alternatives where isolation voltage is not a limiting factor in the application.

Parameter Comparison

Parameter	H11A2S (onsemi)	H11A2SMT&R (Isocom)	H11A2XSM (Isocom)	4N25SR2M (onsemi)
Voltage - Isolation	5300Vrms	7.5Vpk	5300Vrms	4170Vrms
Number of Channels	1	1	1	1
Current Transfer Ratio (Min)	20% @ 10mA	20% @ 10mA	20% @ 10mA	20% @ 10mA
Output Type	Transistor with Base	Transistor with Base	Transistor with Base	Transistor with Base
Voltage - Output (Max)	30V	30V	30V	30V
Voltage - Forward (Vf) (Typ)	1.18V	1.2V	1.2V	1.18V
Current - DC Forward (If) (Max)	100 mA	60 mA	60 mA	60 mA
Vce Saturation (Max)	400mV	400mV	400mV	500mV
Operating Temperature	-55°C ~ 100°C	-55°C ~ 100°C	-55°C ~ 100°C	-40°C ~ 100°C
Package / Case	6-SMD, Gull Wing	6-SMD, Gull Wing	6-SMD, Gull Wing	6-SMD, Gull Wing
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

H11A2XSM (Isocom Components 2004 LTD) is the primary substitute for H11A2S. This part maintains identical isolation voltage (5300Vrms), operating temperature range (-55°C ~ 100°C), and package configuration. The H11A2XSM is active in production with RoHS3 compliance and REACH unaffected status, ensuring long-term availability and regulatory alignment.

H11A2SMT&R (Isocom Components 2004 LTD) is a secondary substitute where isolation voltage is not a critical design constraint. While this part specifies 7.5Vpk isolation (significantly lower than the original 5300Vrms), it maintains all other electrical parameters including current transfer ratio, output voltage rating, and operating temperature range. This part is active with RoHS3 compliance.

4N25SR2M (onsemi) is an alternative substitute for applications where isolation voltage of 4170Vrms is acceptable. This part is from the original manufacturer (onsemi) and is active in production. The 4N25SR2M exhibits slightly higher Vce saturation (500mV vs. 400mV) and a narrower operating temperature range (-40°C ~ 100°C vs. -55°C ~ 100°C). Forward current rating is reduced to 60 mA maximum.

Frequently Asked Questions (FAQ)

Q: Can H11A2XSM directly replace H11A2S without circuit modification?

A: Yes. The H11A2XSM maintains the same isolation voltage (5300Vrms), current transfer ratio (20% @ 10mA), output voltage rating (30V), Vce saturation (400mV), and operating temperature range (-55°C ~ 100°C). The 6-SMD, Gull Wing package is identical. No circuit modification is required.

Q: What is the key difference between H11A2SMT&R and H11A2S?

A: The H11A2SMT&R specifies 7.5Vpk isolation voltage compared to H11A2S at 5300Vrms. This represents a significant reduction in isolation capability. All other electrical parameters are compatible. Use H11A2SMT&R only if isolation voltage is not a design requirement.

Q: Why does 4N25SR2M have different specifications?

A: The 4N25SR2M is from a different product family (4N25 base vs. H11A base). It provides 4170Vrms isolation, which is lower than H11A2S. The Vce saturation is 500mV (vs. 400mV) and the operating temperature minimum is -40°C (vs. -55°C). These differences may impact performance in temperature-critical or high-speed switching applications.

Q: Are all substitute parts RoHS compliant?

A: H11A2XSM and H11A2SMT&R are RoHS3 compliant. The original H11A2S does not specify RoHS status. The 4N25SR2M is RoHS3 compliant. All parts are REACH unaffected.

Q: What packaging options are available for substitutes?

A: H11A2XSM is supplied in Tube packaging. H11A2SMT&R is supplied in Tape & Reel (TR). The 4N25SR2M is supplied in Cut Tape (CT) & Digi-Reel. All maintain the 6-SMD, Gull Wing surface mount package configuration.

Q: Which substitute has the highest current capacity?

A: The H11A2S original part supports 100 mA DC forward current maximum. All substitute parts (H11A2XSM, H11A2SMT&R, and 4N25SR2M) are rated for 60 mA maximum. Applications requiring 100 mA input current must account for this reduction.

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