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H11A1 Equivalent & Substitute Parts
Part Overview
The H11A1 is an optoisolator transistor with base output manufactured by onsemi, rated for 5300Vrms isolation voltage in a 6-DIP through-hole package. This component provides galvanic isolation for DC input signals with transistor output capability. The H11A1 is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | H11A1 |
| Manufacturer | onsemi |
| Category | Optoisolators |
| Product Status | Obsolete |
| Number of Channels | 1 |
| Voltage - Isolation | 5300Vrms |
| Current Transfer Ratio (Min) | 50% @ 10mA |
| Input Type | DC |
| Output Type | Transistor with Base |
| Voltage - Output (Max) | 30V |
| Voltage - Forward (Vf) (Typ) | 1.18V |
| Current - DC Forward (If) (Max) | 100 mA |
| Vce Saturation (Max) | 400mV |
| Turn On / Turn Off Time (Typ) | 2µs, 2µs |
| Operating Temperature | -55°C ~ 100°C |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
Substitute Part Grouping Explanation
Substitution of the H11A1 optoisolator is determined by the following critical parameters:
- Isolation Voltage: Minimum 5300Vrms required for equivalent functionality
- Current Transfer Ratio: Minimum 50% @ 10mA for signal integrity
- Output Type: Transistor with base configuration
- Package: 6-DIP through-hole mounting
- Input Type: DC input
- Operating Temperature Range: Must encompass -55°C to 100°C minimum
- Vce Saturation: Maximum 400mV for output switching performance
Substitute parts are grouped based on whether they meet these core electrical and mechanical specifications. Parts that maintain isolation voltage, current transfer ratio, and output characteristics within acceptable ranges are classified as direct or functional equivalents.
Parameter Comparison
| Parameter | H11A1 (onsemi) | H11A1M (Fairchild) | 4N35-000E (Broadcom) | H11D1 (onsemi) |
|---|---|---|---|---|
| Voltage - Isolation | 5300Vrms | 5000Vrms | 3550Vrms | 5300Vrms |
| Current Transfer Ratio (Min) | 50% @ 10mA | 50% @ 10mA | 100% @ 10mA | 20% @ 10mA |
| Turn On / Turn Off Time (Typ) | 2µs, 2µs | 3µs, 3µs | — | 5µs, 5µs |
| Voltage - Output (Max) | 30V | 80V | 30V | 300V |
| Voltage - Forward (Vf) (Typ) | 1.18V | 1.2V | 1.2V | 1.15V |
| Current - DC Forward (If) (Max) | 100 mA | 60 mA | 60 mA | 80 mA |
| Vce Saturation (Max) | 400mV | 400mV | 300mV | 400mV |
| Operating Temperature | -55°C ~ 100°C | -55°C ~ 110°C | -55°C ~ 100°C | -55°C ~ 100°C |
| Package / Case | 6-DIP (0.300", 7.62mm) | 6-DIP (0.400", 10.16mm) | 6-DIP (0.300", 7.62mm) | 6-DIP (0.300", 7.62mm) |
| Product Status | Obsolete | Active | Active | Obsolete |
Engineering Selection Recommendations
H11A1M (Fairchild Semiconductor): Active product status with 5000Vrms isolation voltage. Meets minimum isolation requirement with 50% current transfer ratio. Package footprint differs (0.400" vs 0.300"), requiring PCB layout verification. Extended operating temperature range to 110°C provides additional margin. Suitable for direct replacement in applications where PCB spacing accommodates the larger package.
4N35-000E (Broadcom Limited): Active product with RoHS3 compliance. Isolation voltage of 3550Vrms falls below the H11A1 specification, limiting substitution to applications with lower isolation requirements. Superior current transfer ratio of 100% @ 10mA and lower Vce saturation (300mV) provide improved switching performance. Package footprint matches H11A1 (0.300", 7.62mm). Suitable only for designs where 3550Vrms isolation is acceptable.
H11D1 (onsemi): Obsolete product with matching 5300Vrms isolation voltage and package footprint. Current transfer ratio of 20% @ 10mA is below H11A1 specification, affecting signal integrity. Extended output voltage rating (300V vs 30V) and slower switching times (5µs vs 2µs) indicate different application profile. Not recommended as primary substitute due to reduced current transfer ratio and obsolete status.
Frequently Asked Questions (FAQ)
Q: Can H11A1M replace H11A1 directly on the PCB? A: H11A1M has a different package footprint (0.400" vs 0.300" DIP width). PCB layout must be verified to confirm pin spacing compatibility before substitution.
Q: Is 4N35-000E suitable for all H11A1 applications? A: No. The 4N35-000E provides 3550Vrms isolation, which is 1750Vrms lower than H11A1. Substitution is valid only for applications where the lower isolation voltage meets system requirements.
Q: Why is H11D1 listed as a substitute if it has lower current transfer ratio? A: H11D1 maintains the same isolation voltage (5300Vrms) and package footprint as H11A1. However, the 20% minimum current transfer ratio versus 50% for H11A1 represents a functional limitation. H11D1 is suitable only for applications tolerant of reduced signal transfer efficiency.
Q: What is the impact of switching time differences between substitutes? A: H11A1 has 2µs turn-on/turn-off time. H11A1M (3µs) and H11D1 (5µs) have slower switching. Applications requiring fast signal isolation may experience timing degradation with slower substitutes.
Q: Are all substitutes RoHS compliant? A: Only 4N35-000E is explicitly listed as RoHS3 compliant. H11A1, H11A1M, and H11D1 do not have RoHS compliance data provided.
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