GS1M Equivalent & Substitute Parts

Part Overview

The GS1M is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. Manufactured by Micro Commercial Co, this component is classified as obsolete product status. Due to its obsolete designation, identifying equivalent and substitute parts from active manufacturers is necessary for ongoing design support, production continuity, and component sourcing.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	1000 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A
Speed	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C

Substitute Part Grouping Explanation

Substitute parts for the GS1M are grouped based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following core parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 1000 V minimum
Current - Average Rectified (Io): 1 A minimum
Package / Case: DO-214AC, SMA surface mount
Mounting Type: Surface Mount

Secondary Compatibility Factors:

Forward voltage (Vf) within acceptable operating range
Recovery speed classification (Standard or Fast Recovery acceptable)
Reverse leakage current within specified limits
Operating temperature range compatibility
RoHS compliance status

Parts are classified as Direct Substitutes when all primary criteria are met with active product status. Parts are classified as Similar when electrical parameters are equivalent but product status or specific characteristics differ.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf @ 1A	Speed	Ir @ Vr	Package	Product Status	RoHS Status
GS1M	Micro Commercial Co	1000 V	1 A	1.1 V	Standard >500ns	10 µA @ 1000V	DO-214AC, SMA	Obsolete	Non-compliant
GS1M-LTP	Micro Commercial Co	1000 V	1 A	1.0 V	Standard >500ns	10 µA @ 1000V	DO-214AC, SMA	Active	ROHS3 Compliant
MRA4007T3G	onsemi	1000 V	1 A	1.1 V	Standard >500ns	10 µA @ 1000V	DO-214AC, SMA	Not For New Designs	ROHS3 Compliant
US1M-E3/5AT	Vishay General Semiconductor - Diodes Division	1000 V	1 A	1.7 V	Fast Recovery ≤500ns	10 µA @ 1000V	DO-214AC, SMA	Active	ROHS3 Compliant
CFRA107-G	Comchip Technology	1000 V	1 A	1.3 V	Fast Recovery ≤500ns	5 µA @ 1000V	DO-214AC, SMA	Active	ROHS3 Compliant
CMR1-10M TR13 PBFREE	Central Semiconductor Corp	1000 V	1 A	1.1 V	Standard >500ns	5 µA @ 1000V	DO-214AC, SMA	Active	ROHS3 Compliant
CMR1F-10M TR13 PBFREE	Central Semiconductor Corp	1000 V	1 A	1.3 V	Fast Recovery ≤500ns	5 µA @ 1000V	DO-214AC, SMA	Active	ROHS3 Compliant
CMR1U-10M TR13 PBFREE	Central Semiconductor Corp	1000 V	1 A	1.7 V	Fast Recovery ≤500ns	5 µA @ 1000V	DO-214AC, SMA	Active	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: GS1M-LTP

GS1M-LTP is the direct successor from the original manufacturer, Micro Commercial Co. This part maintains identical electrical specifications to the GS1M while offering active product status and ROHS3 compliance. The forward voltage is improved at 1.0 V versus 1.1 V, providing superior thermal performance. This part is the preferred choice for direct replacement in existing designs.

Secondary Recommendations for Active Designs:

CMR1-10M TR13 PBFREE (Central Semiconductor Corp) provides standard recovery characteristics matching the original GS1M specification. This part offers equivalent forward voltage (1.1 V) and lower reverse leakage current (5 µA versus 10 µA), with active product status and full ROHS3 compliance.

CFRA107-G (Comchip Technology) and CMR1F-10M TR13 PBFREE (Central Semiconductor Corp) offer fast recovery characteristics with forward voltages of 1.3 V and 1.3 V respectively. These parts are suitable for applications where faster switching performance is beneficial, with active product status and ROHS3 compliance.

US1M-E3/5AT (Vishay General Semiconductor - Diodes Division) provides fast recovery performance with active product status and ROHS3 compliance. Forward voltage is elevated at 1.7 V, requiring thermal design consideration in power-sensitive applications.

Not Recommended for New Designs:

MRA4007T3G carries "Not For New Designs" status despite ROHS3 compliance and should not be selected for new product development.

Voltage Derating Consideration:

S1B and S1G are not suitable substitutes. S1B lacks complete electrical specifications. S1G is rated for 400 V maximum reverse voltage, which is insufficient for 1000 V applications.

Frequently Asked Questions (FAQ)

Q: Can GS1M-LTP be used as a direct replacement for GS1M?

A: Yes. GS1M-LTP is the active equivalent from the same manufacturer with identical voltage and current ratings, same package, and improved forward voltage specification. It is the recommended replacement.

Q: What is the difference between Standard Recovery and Fast Recovery diodes?

A: Recovery speed refers to the time required for the diode to transition from conducting to blocking state. Standard Recovery (>500ns) is suitable for general-purpose rectification. Fast Recovery (≤500ns) provides faster switching, beneficial in high-frequency applications. Both types are electrically compatible for the GS1M application.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitute parts carry ROHS3 compliance. The original GS1M is RoHS non-compliant. Compliance status must be verified against your application requirements.

Q: Does forward voltage variation affect circuit performance?

A: Forward voltage differences between 1.0 V and 1.7 V affect power dissipation and thermal performance. Lower forward voltage (GS1M-LTP at 1.0 V) reduces heat generation. Higher forward voltage (US1M-E3/5AT at 1.7 V) increases power loss. Selection depends on thermal design constraints and power budget.

Q: Can I use a 1000 V rated diode in a 400 V application?

A: Yes. A 1000 V rated diode operates safely at 400 V. However, using a 400 V rated diode (such as S1G) in a 1000 V application is not acceptable and creates safety risk.

Q: What is the significance of reverse leakage current?

A: Reverse leakage current (Ir) represents the small current flowing through the diode when reverse biased. Lower leakage current indicates better blocking performance. GS1M specifies 10 µA at 1000 V, while several substitutes offer 5 µA, providing improved reverse bias characteristics.

Q: Are packaging differences between DO-214AC and SMA significant?

A: DO-214AC and SMA refer to the same surface mount package designation. These terms are interchangeable for this component category. All listed substitutes use identical package footprints.

Q: What is the operating temperature range consideration?

A: GS1M operates from -55°C to 150°C junction temperature. Most substitutes maintain this range or extend it. CMR1-10M, CMR1F-10M, and CMR1U-10M extend the lower limit to -65°C. MRA4007T3G extends the upper limit to 175°C. Verify application requirements against selected part specifications.

Q: Is MSL (Moisture Sensitivity Level) important for my application?

A: All listed parts carry MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. This simplifies handling and storage requirements across all substitute options.

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