GS1D_R1_00001 Equivalent & Substitute Parts

Part Overview

The GS1D_R1_00001 is a general-purpose rectifier diode manufactured by Panjit International Inc., rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount SMA (DO-214AC) package. This component is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design flexibility needs. The following parts maintain the core electrical specifications: 200 V reverse voltage rating, 1 A current rating, standard recovery characteristics, and DO-214AC surface mount packaging.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1	V @ 1 A
Speed	Standard Recovery >500ns, > 200mA (Io)	-
Current - Reverse Leakage @ Vr	1	µA @ 200 V
Capacitance @ Vr, F	12	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	-
Mounting Type	Surface Mount	-
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts for the GS1D_R1_00001 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents (Direct Substitutes): Parts that match all critical electrical parameters including 200 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, standard recovery speed characteristics, and DO-214AC surface mount packaging. These parts maintain identical functional performance within the same thermal and electrical operating envelope.

Similar Parts (Functional Alternatives): Parts that maintain the 200 V reverse voltage and DO-214AC package but may differ in current rating, recovery speed, or leakage characteristics. These parts are suitable for applications where the primary circuit requirements are met but secondary performance characteristics differ.

The following key parameters determine substitution eligibility:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1 A (or higher)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C minimum

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	Ir @ Vr [µA]	Capacitance @ Vr [pF]	Product Status	Package
GS1D_R1_00001	Panjit International Inc.	200	1	1.1 @ 1 A	Standard Recovery >500ns	1 @ 200 V	12 @ 4V, 1MHz	Active	DO-214AC, SMA
GS1DWG_R1_00001	Panjit International Inc.	200	1	1.1 @ 1 A	Standard Recovery >500ns	1 @ 200 V	7 @ 4V, 1MHz	Not For New Designs	DO-214AC, SMA
ES1D-13-F	Diodes Incorporated	200	1	920 mV @ 1 A	Fast Recovery ≤500ns	5 @ 200 V	20 @ 4V, 1MHz	Active	DO-214AC, SMA
RS2DAH	Taiwan Semiconductor Corporation	200	1.5	1.3 @ 1.5 A	Fast Recovery ≤500ns	5 @ 200 V	50 @ 4V, 1MHz	Active	DO-214AC, SMA
CS1D-E3/I	Vishay General Semiconductor - Diodes Division	200	1	1.1 @ 1 A	Standard Recovery >500ns	5 @ 200 V	6 @ 4V, 1MHz	Obsolete	DO-214AC, SMA
S1D	YAGEO	200	1	1.1	-	-	-	Active	DO-214AC
S1D-E3/5AT	Vishay General Semiconductor - Diodes Division	200	1	1.1 @ 1 A	Standard Recovery >500ns	1 @ 200 V	12 @ 4V, 1MHz	Active	DO-214AC, SMA
S1D-E3/61T	Vishay General Semiconductor - Diodes Division	200	1	1.1 @ 1 A	Standard Recovery >500ns	1 @ 200 V	12 @ 4V, 1MHz	Active	DO-214AC, SMA
S1D-HF	Comchip Technology	200	1	1.1 @ 1 A	Standard Recovery >500ns	5 @ 200 V	-	Active	DO-214AC, SMA
S1DHE3_A/H	Vishay General Semiconductor - Diodes Division	200	1	1.1 @ 1 A	Standard Recovery >500ns	1 @ 200 V	12 @ 4V, 1MHz	Active	DO-214AC, SMA
S1DHE3_A/I	Vishay General Semiconductor - Diodes Division	200	1	1.1 @ 1 A	Standard Recovery >500ns	1 @ 200 V	12 @ 4V, 1MHz	Active	DO-214AC, SMA

Engineering Selection Recommendations

Preferred Direct Substitutes (Parametric Equivalents):

The following parts provide complete electrical and mechanical equivalence to GS1D_R1_00001 with Active product status:

S1D-E3/5AT (Vishay General Semiconductor - Diodes Division): Matches all electrical parameters including 200 V reverse voltage, 1 A current, 1.1 V forward voltage, standard recovery speed, 1 µA reverse leakage, and 12 pF capacitance. Active product status with ROHS3 compliance.
S1D-E3/61T (Vishay General Semiconductor - Diodes Division): Identical electrical specifications to S1D-E3/5AT with 126,100 units in stock. Tape & Reel packaging. Active product status with ROHS3 compliance.
S1DHE3_A/I (Vishay General Semiconductor - Diodes Division): Meets all core electrical parameters with automotive-grade qualification (AEC-Q101). Active product status with ROHS3 compliance and 6,218 units available.
S1DHE3_A/H (Vishay General Semiconductor - Diodes Division): Automotive-qualified equivalent with identical electrical specifications. Active product status with ROHS3 compliance.

Alternative Substitutes (Functional Compatibility):

ES1D-13-F (Diodes Incorporated): Maintains 200 V reverse voltage and 1 A current rating with improved forward voltage (920 mV vs. 1.1 V) and fast recovery characteristics. Active product status with high inventory availability (550,400 units).
S1D-HF (Comchip Technology): Standard recovery diode matching core electrical specifications. Active product status with 3,760 units in stock.
S1D (YAGEO): Parametric equivalent with Active product status and 5,993 units available.

Not Recommended for New Designs:

GS1DWG_R1_00001 (Panjit International Inc.): Marked as "Not For New Designs" despite electrical equivalence.
CS1D-E3/I (Vishay General Semiconductor - Diodes Division): Obsolete product status.

Higher Current Alternative:

RS2DAH (Taiwan Semiconductor Corporation): Rated for 1.5 A average rectified current with automotive qualification (AEC-Q101). Suitable for applications requiring higher current capacity within the same 200 V voltage class and DO-214AC package.

Frequently Asked Questions (FAQ)

Q: Can S1D-E3/61T be used as a direct replacement for GS1D_R1_00001?

A: Yes. S1D-E3/61T provides complete parametric equivalence with identical 200 V reverse voltage, 1 A current rating, 1.1 V forward voltage at 1 A, standard recovery speed, 1 µA reverse leakage, and 12 pF capacitance. Both use DO-214AC surface mount packaging and operate across -55°C to 150°C. Active product status with ROHS3 compliance.

Q: What is the difference between S1D-E3/5AT and S1D-E3/61T?

A: Both parts are electrically identical with matching specifications. The primary difference is packaging format: S1D-E3/5AT is supplied in Cut Tape (CT) & Digi-Reel format with 933 units in stock, while S1D-E3/61T is supplied in Tape & Reel (TR) format with 126,100 units in stock.

Q: Is ES1D-13-F compatible with GS1D_R1_00001?

A: ES1D-13-F maintains the same 200 V reverse voltage, 1 A current rating, and DO-214AC package. However, it features fast recovery characteristics (≤500ns vs. >500ns standard recovery) and lower forward voltage (920 mV vs. 1.1 V). These differences are compatible with most applications but should be verified for circuits sensitive to recovery speed or forward voltage characteristics.

Q: Can RS2DAH replace GS1D_R1_00001?

A: RS2DAH is functionally compatible with higher current capacity (1.5 A vs. 1 A) and maintains the same 200 V reverse voltage and DO-214AC package. It includes automotive qualification (AEC-Q101). Use RS2DAH when higher current capability is required or beneficial. Verify that the higher current rating does not introduce thermal or circuit design complications.

Q: Why is GS1DWG_R1_00001 listed as "Not For New Designs"?

A: GS1DWG_R1_00001 is electrically equivalent but carries a "Not For New Designs" status, indicating the manufacturer recommends against using this part number for new circuit designs. Use active alternatives such as S1D-E3/61T or S1DHE3_A/I instead.

Q: What does AEC-Q101 qualification mean for S1DHE3_A/I and S1DHE3_A/H?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Parts carrying this qualification have undergone rigorous testing for reliability, temperature cycling, and performance consistency. S1DHE3_A/I and S1DHE3_A/H are suitable for automotive applications requiring this certification level.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance status, matching the environmental compliance of GS1D_R1_00001.

Q: What is the significance of the 12 pF capacitance specification?

A: Capacitance at reverse voltage (Vr) affects high-frequency performance and switching characteristics. GS1D_R1_00001 and its direct parametric equivalents (S1D-E3/5AT, S1D-E3/61T, S1DHE3_A/I, S1DHE3_A/H) all specify 12 pF @ 4V, 1MHz. Parts with different capacitance values (such as CS1D-E3/I at 6 pF or ES1D-13-F at 20 pF) may exhibit different high-frequency behavior and should be evaluated for frequency-sensitive applications.

Q: What is the difference between standard recovery and fast recovery diodes?

A: GS1D_R1_00001 features standard recovery (>500ns), while ES1D-13-F features fast recovery (≤500ns). Fast recovery diodes switch more quickly, reducing reverse recovery time and associated losses. Standard recovery diodes are typically used in lower-frequency applications. Select based on circuit switching frequency requirements.

Q: Can I use S1D (YAGEO) without additional verification?

A: S1D is a parametric equivalent with Active product status. However, limited detailed specifications are provided in the data. Verify complete electrical characteristics with the manufacturer datasheet before implementation, particularly for applications with strict performance requirements.

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