GPA804 Equivalent & Substitute Parts

Part Overview

The GPA804 is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 8 A average rectified current in a Through Hole TO-220AC package. This component is classified as Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the original component, enabling direct replacement or functional equivalence in circuit applications where the GPA804 is specified.

Substiute Parts

GPA804

Taiwan Semiconductor CorporationIn Stock: 769GPA804 Datasheet

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MUR840G

onsemiIn Stock: 29316MUR840G Datasheet

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NS8GT-E3/45

Vishay General Semiconductor - Diodes DivisionIn Stock: 1202NS8GT-E3/45 Datasheet

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STTH30R04D

STMicroelectronicsIn Stock: 1745STTH30R04D Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the GPA804 are classified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

• Voltage - DC Reverse (Vr) (Max): Equal to or greater than 400 V
• Current - Average Rectified (Io): Equal to or greater than 8 A
• Mounting Type: Through Hole
• Package / Case: TO-220-2 or equivalent mechanical footprint
• RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

• Operating Temperature Range: Must encompass or exceed the -55°C ~ 150°C range
• Forward Voltage (Vf): Acceptable within standard rectifier diode tolerances
• Recovery Speed: Standard or Fast Recovery acceptable for general-purpose applications

The three substitute parts identified (MUR840G, NS8GT-E3/45, STTH30R04D) meet the primary substitution criteria. MUR840G and NS8GT-E3/45 are direct current-rated equivalents at 8 A. STTH30R04D exceeds the current rating at 30 A, providing functional equivalence with higher current capacity.

Parameter Comparison

Engineering Selection Recommendations

MUR840G (onsemi): This substitute provides equivalent 400 V / 8 A ratings with Fast Recovery characteristics. The forward voltage is 0.2 V higher at 1.3 V @ 8 A compared to the GPA804. Operating temperature range extends to -65°C ~ 175°C, exceeding the GPA804 specification. RoHS3 compliance and Active product status confirm suitability for new designs and replacements.

NS8GT-E3/45 (Vishay General Semiconductor - Diodes Division): This substitute matches the GPA804 specification identically across voltage, current, and forward voltage parameters. Operating temperature range is identical at -55°C ~ 150°C. RoHS3 compliance and Active product status confirm direct equivalence. Reverse leakage is 10 µA @ 400 V, slightly higher than the GPA804 at 5 µA.

STTH30R04D (STMicroelectronics): This substitute exceeds the GPA804 current rating at 30 A while maintaining 400 V reverse voltage. Forward voltage is 1.45 V @ 30 A. Fast Recovery characteristics and extended operating temperature range (-40°C ~ 175°C) provide enhanced performance margins. RoHS3 compliance and Active product status confirm suitability. This part is applicable where higher current capacity is required or beneficial.

All three substitutes are Active products with ROHS3 compliance, REACH Unaffected status, and EAR99 ECCN classification, matching the regulatory and compliance profile of the GPA804.

Frequently Asked Questions (FAQ)

Q: Can MUR840G directly replace GPA804 in all applications?

A: MUR840G meets the 400 V / 8 A electrical requirements and shares the TO-220-2 package. The forward voltage is 0.2 V higher (1.3 V vs. 1.1 V @ 8 A), and recovery speed is faster. These differences are within acceptable tolerances for general-purpose rectifier applications. Compliance certifications are equivalent.

Q: What is the difference between NS8GT-E3/45 and GPA804?

A: NS8GT-E3/45 provides identical electrical specifications: 400 V, 8 A, 1.1 V forward voltage, and Standard Recovery speed. Operating temperature range matches at -55°C ~ 150°C. Reverse leakage is 10 µA @ 400 V versus 5 µA for GPA804. This represents a direct equivalent substitute.

Q: When should STTH30R04D be selected over MUR840G or NS8GT-E3/45?

A: STTH30R04D is selected when circuit design requires or benefits from higher current capacity (30 A vs. 8 A). The 400 V reverse voltage rating remains constant. This part is suitable for applications with higher current demands or where design margin improvement is desired. Forward voltage and recovery characteristics differ; circuit analysis is required to confirm suitability.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts use Through Hole mounting with TO-220-2 package / case designation. Supplier device packages vary (TO-220-2 or TO-220AC), but mechanical footprint compatibility is maintained for PCB mounting.

Q: Do all parts meet the same compliance requirements?

A: All parts listed are RoHS3 Compliant, REACH Unaffected, and classified as EAR99 under ECCN. Product status is Active for all parts, confirming availability and ongoing manufacturer support.

Q: What is the significance of recovery speed differences?

A: GPA804 and NS8GT-E3/45 feature Standard Recovery (>500ns), while MUR840G and STTH30R04D feature Fast Recovery (≤500ns). Fast Recovery diodes exhibit lower reverse recovery time, reducing switching losses in high-frequency applications. Standard Recovery diodes are suitable for line-frequency and lower-frequency rectification. Application frequency determines the appropriate selection.

Q: Can reverse leakage differences affect circuit performance?

A: Reverse leakage values (5 µA to 15 µA @ 400 V) are typical for general-purpose rectifier diodes and do not significantly impact standard rectification circuits. Applications with stringent leakage requirements should specify the GPA804 or NS8GT-E3/45 at 5-10 µA.