Equivalent & Substitute Parts for GP30M-E3/54

Part Overview

The GP30M-E3/54 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 1000 V DC reverse voltage and 3 A average rectified current in a through-hole DO-201AD axial package. This device is part of the SUPERECTIFIER® series and maintains Active product status with full ROHS3 compliance.

Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required, or when application-specific voltage ratings allow for lower-rated alternatives that reduce component cost while maintaining functional compatibility within the circuit design constraints.

Substiute Parts

GP30M-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1174GP30M-E3/54 Datasheet
GP30M-E3/54
Current Part
GP30M-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 4282GP30M-E3/73 Datasheet
GP30M-E3/73
Parametric Equivalent
1N5402G
Taiwan Semiconductor CorporationIn Stock: 21461N5402G Datasheet
1N5402G
MFR Recommended
1N5404G
onsemiIn Stock: 14341N5404G Datasheet
1N5404G
MFR Recommended
1N5404G-T
Diodes IncorporatedIn Stock: 277701N5404G-T Datasheet
1N5404G-T
MFR Recommended
1N5406G
Taiwan Semiconductor CorporationIn Stock: 24281N5406G Datasheet
1N5406G
MFR Recommended
1N5407-G
Comchip TechnologyIn Stock: 9301N5407-G Datasheet
1N5407-G
MFR Recommended
1N5407G
Taiwan Semiconductor CorporationIn Stock: 44961N5407G Datasheet
1N5407G
MFR Recommended
1N5407G-T
Diodes IncorporatedIn Stock: 23731N5407G-T Datasheet
1N5407G-T
MFR Recommended
1N5407RLG
onsemiIn Stock: 12741N5407RLG Datasheet
1N5407RLG
MFR Recommended
1N5408G
Taiwan Semiconductor CorporationIn Stock: 381711N5408G Datasheet
1N5408G
MFR Recommended
1N5408G
Taiwan Semiconductor CorporationIn Stock: 381711N5408G Datasheet
1N5408G
MFR Recommended
1N5408G
Taiwan Semiconductor CorporationIn Stock: 381711N5408G Datasheet
1N5408G
MFR Recommended
1N5408G-T
Diodes IncorporatedIn Stock: 5498561N5408G-T Datasheet
1N5408G-T
MFR Recommended
1N5408GP-TP
Micro Commercial CoIn Stock: 28431N5408GP-TP Datasheet
1N5408GP-TP
MFR Recommended
1N5408RLG
onsemiIn Stock: 274211N5408RLG Datasheet
1N5408RLG
MFR Recommended
60S10-TP
Micro Commercial CoIn Stock: 683760S10-TP Datasheet
60S10-TP
MFR Recommended
EGP30K
Fairchild SemiconductorIn Stock: 5117EGP30K Datasheet
EGP30K
MFR Recommended
FR307GP-TP
Micro Commercial CoIn Stock: 6024FR307GP-TP Datasheet
FR307GP-TP
MFR Recommended
STTH310
STMicroelectronicsIn Stock: 4634STTH310 Datasheet
STTH310
MFR Recommended
STTH310RL
STMicroelectronicsIn Stock: 10368STTH310RL Datasheet
STTH310RL
MFR Recommended
UF5408GP-TP
Micro Commercial CoIn Stock: 1803UF5408GP-TP Datasheet
UF5408GP-TP
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3 A V
Reverse Recovery Time (trr) 5 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V µA
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction -65 to 175 °C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the GP30M-E3/54 is determined by the following critical parameters:

Current Rating: All substitute parts must support a minimum average rectified current (Io) of 3 A to maintain functional equivalence in the circuit.

Voltage Rating: Substitute parts may have equal or higher DC reverse voltage ratings (Vr). Parts with lower voltage ratings are not suitable for direct substitution in applications requiring 1000 V isolation.

Package and Mounting: The DO-201AD axial through-hole package is the primary form factor. Substitutes in alternative axial packages (DO-201AA, DO-27) are mechanically compatible but may require board layout verification.

Forward Voltage (Vf): Forward voltage drop at rated current affects power dissipation and circuit performance. Variations between 1.0 V and 1.1 V at 3 A are within acceptable engineering tolerance for general-purpose rectification.

Recovery Characteristics: Standard recovery speed (>500 ns at >200 mA) is consistent across all listed parts. Reverse recovery time (trr) values of 2 µs to 5 µs are acceptable for standard rectification applications.

Compliance and Status: All substitute parts maintain ROHS3 compliance and REACH unaffected status. Product status (Active vs. Not For New Designs) influences long-term availability and supply chain planning.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 3A [V] trr [µs] Ir @ Vr [µA] Package Status
GP30M-E3/54 Vishay 1000 3 1.1 5 5 @ 1000V DO-201AD Active
GP30M-E3/73 Vishay 1000 3 1.1 5 5 @ 1000V DO-201AD Active
1N5402G Taiwan Semiconductor 200 3 1.0 5 @ 200V DO-201AD Active
1N5404G onsemi 400 3 1.0 10 @ 400V DO-201AA Not For New Designs
1N5404G-T Diodes Incorporated 400 3 1.1 2 5 @ 400V DO-201AD Active
1N5406G Taiwan Semiconductor 600 3 1.0 5 @ 600V DO-201AD Active
1N5407-G Comchip Technology 800 3 1.0 5 @ 800V DO-201AD Active
1N5407G Taiwan Semiconductor 800 3 1.0 5 @ 800V DO-201AD Active
1N5407G-T Diodes Incorporated 800 3 1.1 2 5 @ 800V DO-201AD Active
1N5407RLG onsemi 800 3 1.0 10 @ 800V DO-201AA Not For New Designs
1N5408G Taiwan Semiconductor 1000 3 1.0 5 @ 1000V DO-201AD Active

Engineering Selection Recommendations

Direct Parametric Equivalent: The GP30M-E3/73 from Vishay is a direct parametric equivalent with identical electrical specifications and the same DO-201AD package. This part is preferred for applications requiring guaranteed compatibility with existing board layouts and thermal management designs.

Full Voltage Rating Match (1000 V): The 1N5408G from Taiwan Semiconductor provides equivalent 1000 V reverse voltage rating and 3 A current capacity in the DO-201AD package. This part is Active status and suitable for new designs. Forward voltage is 1.0 V at 3 A, representing a 0.1 V improvement over the primary part, resulting in reduced power dissipation.

Lower Voltage Alternatives: Parts rated at 200 V (1N5402G), 400 V (1N5404G-T), 600 V (1N5406G), and 800 V (1N5407G, 1N5407-G, 1N5407G-T) are suitable only for applications where the circuit design permits lower reverse voltage ratings. These alternatives reduce component cost and may improve thermal performance due to lower forward voltage characteristics.

Active Status Preference: Parts designated as Active status (GP30M-E3/73, 1N5408G, 1N5404G-T, 1N5406G, 1N5407-G, 1N5407G, 1N5407G-T) are recommended for new designs and long-term supply chain stability. Parts marked "Not For New Designs" (1N5404G, 1N5407RLG) should be used only for legacy system maintenance or replacement applications.

Package Consistency: All listed substitutes maintain through-hole axial mounting. Parts in DO-201AD package (standard form factor) are preferred over DO-201AA or DO-27 variants to ensure direct board layout compatibility without modification.

Compliance Verification: All substitute parts maintain ROHS3 compliance and REACH unaffected status, meeting regulatory requirements equivalent to the primary part.

Frequently Asked Questions (FAQ)

Q: Can I use a lower voltage-rated diode (such as 1N5406G at 600 V) in place of the GP30M-E3/54 (1000 V)?

A: A lower voltage-rated diode can be used only if the circuit design ensures that the reverse voltage across the diode never exceeds the substitute part's rating. If the application requires 1000 V reverse voltage isolation, a lower-rated part will fail. Verify the maximum reverse voltage in your specific circuit before substitution.

Q: What is the difference between the GP30M-E3/54 and GP30M-E3/73?

A: Both parts are manufactured by Vishay and share identical electrical specifications: 1000 V reverse voltage, 3 A current rating, 1.1 V forward voltage at 3 A, and DO-201AD package. The difference is in the tape reel configuration (E3/54 vs. E3/73), which affects packaging and ordering but not electrical performance. They are direct parametric equivalents.

Q: Why do some substitute parts show "Not For New Designs" status?

A: Parts marked "Not For New Designs" (such as 1N5404G from onsemi and 1N5407RLG from onsemi) are legacy components that manufacturers are phasing out. While they remain functionally equivalent, they are not recommended for new circuit designs due to uncertain long-term availability. Use Active status parts for new designs to ensure supply chain continuity.

Q: Are DO-201AA and DO-27 packages mechanically compatible with DO-201AD?

A: DO-201AA, DO-27, and DO-201AD are all axial through-hole packages with similar lead spacing and diameter. They are mechanically compatible for board insertion. However, verify that your PCB hole spacing and component placement accommodate the specific package variant, as minor dimensional differences may exist.

Q: How does forward voltage (Vf) affect my circuit design?

A: Forward voltage drop determines power dissipation in the diode during conduction. The GP30M-E3/54 has Vf = 1.1 V at 3 A, while some substitutes (such as 1N5408G) have Vf = 1.0 V at 3 A. The 0.1 V difference results in lower heat generation with the substitute. In high-current or high-frequency applications, this difference may affect thermal management and overall circuit efficiency.

Q: Can I substitute a diode with a faster recovery time (lower trr)?

A: Yes. The GP30M-E3/54 has trr = 5 µs. Substitutes with faster recovery times (such as 1N5404G-T or 1N5407G-T with trr = 2 µs) will improve switching performance and reduce reverse recovery losses. This is a beneficial substitution for high-frequency rectification applications.

Q: What does "Standard Recovery >500ns, >200mA (Io)" mean?

A: This specification indicates that all listed parts use standard recovery diode technology with recovery time greater than 500 nanoseconds at currents exceeding 200 mA. This is typical for general-purpose rectification and distinguishes these parts from fast-recovery or ultrafast-recovery diodes used in switching power supplies.

Q: Is the 1N5408G a direct replacement for the GP30M-E3/54?

A: The 1N5408G is a functional equivalent with matching 1000 V reverse voltage and 3 A current rating in the same DO-201AD package. The primary difference is manufacturer (Taiwan Semiconductor vs. Vishay) and slightly lower forward voltage (1.0 V vs. 1.1 V). It is suitable for direct substitution in applications where manufacturer source is not a design constraint.

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