Equivalent & Substitute Parts Reference for GP2D005A170B

Part Overview

being the GP2D005A170B is a Silicon Carbide (SiC) Schottky rectifier diode from SemiQ, categorized under diodes and rectifiers. This component offers a maximum DC reverse voltage of 1700 V, an average rectified current of 5 A, and is housed in a TO-247-2 package for through-hole mounting. It features a very fast performance with zero reverse recovery time, low leakage, and high thermal stability, compliant with ROHS3 environmental requirements.

This model is classified as Discontinued at Digi-Key, making it necessary for engineers to identify suitable equivalent or substitute devices to ensure continuity of design, manufacturing, or maintenance within existing assemblies and inventory planning.

Substiute Parts

GP2D005A170B
SemiQIn Stock: 1236GP2D005A170B Datasheet
GP2D005A170B
Current Part
GP3D005A170B
SemiQIn Stock: 2396GP3D005A170B Datasheet
GP3D005A170B
Direct

Key Parameters

Parameter GP2D005A170B
Manufacturer SemiQ
Category Diodes, Rectifiers
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V
Current - Average Rectified (Io) 5A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 5 A
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Package / Case TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
RoHS Status ROHS3 Compliant
REACH Status REACH Affected
ECCN EAR99

Substitute Part Grouping Explanation

Substitute selection for the GP2D005A170B is determined strictly by the following parameters: identical manufacturer category (Diodes, Rectifiers), SiC Schottky technology, equal or greater voltage rating (1700 V), package and mounting consistency (TO-247-2, through-hole), and matching or higher operating temperature range. Compliance with RoHS3 and REACH, and same ECCN code are also required. Substitutes must maintain or improve on current-handling capabilities, forward voltage characteristics at equivalent test conditions, and reverse recovery performance.

Parameter Comparison

Parameter GP2D005A170B GP3D005A170B
Manufacturer SemiQ SemiQ
Category Diodes, Rectifiers Diodes, Rectifiers
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V 1700 V
Current - Average Rectified (Io) 5A 21A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 5 A 1.65 V @ 5 A
Reverse Recovery Time (trr) 0 ns 0 ns
Mounting Type Through Hole Through Hole
Package / Case TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Affected REACH Affected
ECCN EAR99 EAR99

Engineering Selection Recommendations

Selection of GP3D005A170B as a substitute for GP2D005A170B is based on identical or enhanced key technical parameters, regulatory product compliance (ROHS3), and the same REACH and ECCN classification. The GP3D005A170B is in active production, ensuring supply continuity for designs originally utilizing the discontinued GP2D005A170B.

Frequently Asked Questions (FAQ)

Q1: What parameters must match for substituting GP2D005A170B?
A1: Substitute parts must have matching or superior voltage rating (1700 V), technology (SiC Schottky), identical package and mounting (TO-247-2, through-hole), equivalent or greater current rating, and comply with the same environmental and export classifications.

Q2: Does the package type affect direct substitution?
A2: Yes, both parts utilize the TO-247-2 case for through-hole applications, ensuring mechanical compatibility in PCB layouts and heat sinking.

Q3: Are RoHS3 and REACH statuses important for substitution?
A3: Yes, ROHS3 compliance and REACH status alignment are necessary for regulatory and production acceptance.

Q4: Does higher average rectified current in a substitute impact compatibility?
A4: If all other parameters are matched or exceeded, a higher current rating is permitted as per the specified comparison.

Q5: Is there any impact on thermal or speed performance in this substitution?
A5: Reverse recovery time and operating temperature are identical for both models, maintaining functional equivalence in high-speed and high-temperature applications.

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