GP1602HC0G Diode Array Equivalent & Substitute Parts

Part Overview

The GP1602HC0G is a general-purpose diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode rectifier with 100 V reverse voltage rating and 16 A average rectified current per diode. The device is housed in a TO-220-3 through-hole package and is qualified to AEC-Q101 automotive standards. This part is currently in active production status with 784 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package configuration and functional application. Alternative models may be required due to supply chain considerations, inventory availability, or specific performance characteristics needed for particular circuit implementations.

Substiute Parts

GP1602HC0G
Taiwan Semiconductor CorporationIn Stock: 811GP1602HC0G Datasheet
GP1602HC0G
Current Part
BYV32-100-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1424BYV32-100-E3/45 Datasheet
BYV32-100-E3/45
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FEP16BT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1563FEP16BT-E3/45 Datasheet
FEP16BT-E3/45
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SBR10U100CT
Diodes IncorporatedIn Stock: 27979SBR10U100CT Datasheet
SBR10U100CT
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SBR20E100CT
Diodes IncorporatedIn Stock: 4510SBR20E100CT Datasheet
SBR20E100CT
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SBR20U100CT
Diodes IncorporatedIn Stock: 25864SBR20U100CT Datasheet
SBR20U100CT
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SBR30100CT
Diodes IncorporatedIn Stock: 2334SBR30100CT Datasheet
SBR30100CT
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SBR30A100CT
Diodes IncorporatedIn Stock: 2311SBR30A100CT Datasheet
SBR30A100CT
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SBR40100CT
Diodes IncorporatedIn Stock: 1696SBR40100CT Datasheet
SBR40100CT
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SBR60A100CT
Diodes IncorporatedIn Stock: 15980SBR60A100CT Datasheet
SBR60A100CT
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Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 16 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Operating Temperature - Junction -55 to 150 °C
Package / Case TO-220-3
Mounting Type Through Hole
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the GP1602HC0G is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Diode Configuration: 1 Pair Common Cathode
  • Package / Case: TO-220-3
  • Mounting Type: Through Hole
  • Voltage - DC Reverse (Vr) (Max): 100 V minimum

Performance Compatibility Criteria:

  • Current - Average Rectified (Io) (per Diode): 16 A or greater
  • Voltage - Forward (Vf) (Max): Equal to or lower than 1.1 V at rated current
  • Current - Reverse Leakage @ Vr: 10 µA or lower at 100 V
  • Operating Temperature - Junction: Must encompass -55°C minimum and 150°C maximum

Substitute parts are grouped into three categories based on current rating and recovery speed characteristics:

Group 1 - Direct Current Rating Match (16 A): Parts with identical 16 A current rating and standard or fast recovery characteristics.

Group 2 - Higher Current Rating (18 A to 20 A): Parts with current ratings exceeding 16 A, providing design margin and thermal headroom.

Group 3 - Lower Current Rating (5 A to 15 A): Parts with current ratings below 16 A, suitable only for applications with reduced current requirements.

Parameter Comparison

Part Number Manufacturer Io (A) Vf (Max) Vr (Max) Ir @ Vr Tj (°C) Recovery Speed Product Status
GP1602HC0G Taiwan Semiconductor 16 1.1 V @ 8 A 100 V 10 µA @ 100 V -55 to 150 Standard >500ns Active
BYV32-100-E3/45 Vishay General Semiconductor 18 1.15 V @ 20 A 100 V 10 µA @ 100 V -65 to 150 Fast ≤500ns Active
FEP16BT-E3/45 Vishay General Semiconductor 16 950 mV @ 8 A 100 V 10 µA @ 100 V -55 to 150 Fast ≤500ns Active
SBR10U100CT Diodes Incorporated 5 670 mV @ 5 A 100 V 200 µA @ 100 V -65 to 175 Fast ≤500ns Active
SBR20E100CT Diodes Incorporated 10 790 mV @ 10 A 100 V 90 µA @ 100 V -65 to 175 Standard >500ns Active
SBR20U100CT Diodes Incorporated 10 700 mV @ 10 A 100 V 500 µA @ 100 V -65 to 175 Fast ≤500ns Active
SBR30100CT Diodes Incorporated 15 850 mV @ 15 A 100 V 100 µA @ 100 V -65 to 175 Standard >500ns Obsolete
SBR30A100CT Diodes Incorporated 15 800 mV @ 15 A 100 V 100 µA @ 100 V -65 to 175 Fast ≤500ns Active
SBR40100CT Diodes Incorporated 20 820 mV @ 20 A 100 V 100 µA @ 100 V -65 to 175 Fast ≤500ns Active
SBR60A100CT Diodes Incorporated 30 840 mV @ 30 A 100 V 500 µA @ 100 V -55 to 175 Fast ≤500ns Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

FEP16BT-E3/45 (Vishay General Semiconductor) is the closest functional equivalent to GP1602HC0G. Both devices share identical current rating (16 A), reverse voltage (100 V), and operating temperature range (-55°C to 150°C). FEP16BT-E3/45 offers improved forward voltage characteristics (950 mV versus 1.1 V at 8 A) and fast recovery speed (≤500ns), providing superior thermal performance. Product status is Active with 1500 units in stock.

BYV32-100-E3/45 (Vishay General Semiconductor) provides higher current capacity (18 A versus 16 A) while maintaining 100 V reverse voltage rating. This part offers design margin for applications approaching maximum current limits. Operating temperature range extends to -65°C minimum. Product status is Active with 1379 units in stock.

Secondary Substitutes (Application-Dependent Selection):

SBR40100CT (Diodes Incorporated) is suitable for applications requiring higher current capacity (20 A). This part maintains 100 V reverse voltage and provides fast recovery characteristics. Operating temperature range is -65°C to 175°C. Product status is Active with 1655 units in stock.

SBR60A100CT (Diodes Incorporated) accommodates applications with significantly higher current requirements (30 A). This part maintains 100 V reverse voltage and fast recovery speed. Operating temperature range is -55°C to 175°C, matching the lower temperature limit of GP1602HC0G. Product status is Active with 15890 units in stock.

Not Recommended for Direct Substitution:

SBR30A100CT, SBR20E100CT, SBR20U100CT, and SBR10U100CT have current ratings below 16 A and are not suitable for applications requiring the full 16 A capacity of GP1602HC0G. These parts are appropriate only for circuits designed for reduced current operation.

SBR30100CT is marked as Obsolete and should not be selected for new designs or long-term production applications.

All recommended substitute parts maintain ROHS3 compliance and are qualified to automotive or industrial standards. Package configuration (TO-220-3) and mounting type (Through Hole) are identical across all substitute options.

Frequently Asked Questions (FAQ)

Q: Can FEP16BT-E3/45 be used as a direct replacement for GP1602HC0G in existing designs?

A: Yes. FEP16BT-E3/45 is functionally equivalent with matching current rating (16 A), reverse voltage (100 V), and operating temperature range (-55°C to 150°C). The identical TO-220-3 package and through-hole mounting allow direct PCB substitution. Forward voltage is lower (950 mV versus 1.1 V), which reduces power dissipation and improves thermal performance.

Q: What is the difference between standard recovery and fast recovery diodes in this product category?

A: Recovery speed refers to the time required for reverse current to cease after the diode transitions from forward to reverse bias. Standard recovery (>500ns) is suitable for general-purpose rectification applications. Fast recovery (≤500ns) reduces switching losses and is preferred in high-frequency switching applications. Both recovery types are compatible with the GP1602HC0G application space.

Q: Why do some substitute parts have higher reverse leakage current specifications?

A: Reverse leakage current (Ir) varies by semiconductor technology and manufacturing process. Parts with higher leakage (e.g., 500 µA versus 10 µA) typically employ Super Barrier technology for improved forward voltage characteristics. Higher leakage does not affect rectification performance in most applications but may impact circuits with extremely high impedance or precision analog requirements.

Q: Is BYV32-100-E3/45 suitable for applications where GP1602HC0G is currently used?

A: Yes, with design margin consideration. BYV32-100-E3/45 provides 18 A current capacity versus 16 A for GP1602HC0G. This 12.5% additional capacity provides thermal headroom and reduces stress on the component. The part is suitable for all applications currently using GP1602HC0G and for designs approaching the 16 A limit.

Q: Can SBR40100CT or SBR60A100CT be used in place of GP1602HC0G?

A: Yes, both parts are electrically compatible. SBR40100CT (20 A) and SBR60A100CT (30 A) provide higher current capacity than required by GP1602HC0G specifications. These parts are appropriate for applications with higher current demands or where design margin is critical. No circuit modification is required; the higher-rated device will operate within its safe operating area at lower current levels.

Q: What is the significance of the TO-220-3 package specification?

A: TO-220-3 is a three-lead through-hole package with standardized pin spacing and thermal characteristics. All substitute parts listed maintain this identical package configuration, ensuring mechanical and thermal compatibility with existing PCB layouts. No board redesign or component repositioning is required when substituting between parts with TO-220-3 packaging.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance status, meeting environmental and regulatory requirements equivalent to GP1602HC0G.

Q: Which substitute part offers the lowest forward voltage drop?

A: FEP16BT-E3/45 offers the lowest forward voltage specification at 950 mV @ 8 A, compared to 1.1 V @ 8 A for GP1602HC0G. Lower forward voltage reduces power dissipation and heat generation, improving overall circuit efficiency.

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