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GP10D-M3/73 Equivalent & Substitute Parts
Part Overview
The GP10D-M3/73 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) through-hole axial package. This part is classified as obsolete, which necessitates identification of active equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within defined parameter tolerances suitable for the same application circuit.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 | V @ 1 A |
| Reverse Recovery Time (trr) | 3 | µs |
| Current - Reverse Leakage @ Vr | 5 | µA @ 200 V |
| Capacitance @ Vr, F | 8 | pF @ 4V, 1MHz |
| Mounting Type | Through Hole | - |
| Package / Case | DO-204AL, DO-41, Axial | - |
| Operating Temperature - Junction | -65 to 175 | °C |
| Technology | Standard | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the GP10D-M3/73 is determined by the following critical parameters:
Electrical Specifications:
- Voltage - DC Reverse (Vr) (Max): 200 V minimum
- Current - Average Rectified (Io): 1 A minimum
- Voltage - Forward (Vf) (Max) @ If: 1.1 V maximum at 1 A
- Reverse Recovery Time (trr): Standard recovery classification (>500 ns, >200 mA)
- Current - Reverse Leakage @ Vr: 5 µA maximum at 200 V
Mechanical Specifications:
- Mounting Type: Through Hole
- Package / Case: DO-204AL (DO-41) Axial configuration
- Operating Temperature Range: -65°C to 175°C minimum
Compliance Requirements:
- RoHS3 Compliant status preferred for active parts
- REACH Unaffected classification
Substitute parts are grouped into two categories: parametric equivalents (identical electrical and mechanical specifications, active product status) and manufacturer-recommended alternatives (functionally compatible within application tolerance, may have enhanced performance characteristics or different packaging options).
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) V | Io (A) | Vf (Max) V @ If | trr (µs) | Ir @ Vr (µA) | Package | Product Status | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|
| GP10D-M3/73 | Vishay | 200 | 1 | 1.1 @ 1 A | 3 | 5 @ 200 V | DO-204AL (DO-41) | Obsolete | ROHS3 Compliant |
| 1N4003GP-E3/73 | Vishay | 200 | 1 | 1.1 @ 1 A | 2 | 5 @ 200 V | DO-204AL (DO-41) | Active | ROHS3 Compliant |
| 1N4003GPE-E3/53 | Vishay | 200 | 1 | 1.1 @ 1 A | 2 | 5 @ 200 V | DO-204AL (DO-41) | Active | ROHS3 Compliant |
| GP10-4003E-E3/53 | Vishay | 200 | 1 | 1.1 @ 1 A | 3 | 5 @ 200 V | DO-204AL (DO-41) | Active | ROHS3 Compliant |
| GP10D-E3/73 | Vishay | 200 | 1 | 1.1 @ 1 A | 3 | 5 @ 200 V | DO-204AL (DO-41) | Active | ROHS3 Compliant |
| 1N3611 | Microchip Technology | 200 | 1 | 1.1 @ 1 A | - | 1 @ 200 V | A, Axial | Active | RoHS non-compliant |
| 1N4003-G | Comchip Technology | 200 | 1 | 1.1 @ 1 A | - | 5 @ 200 V | DO-204AL, DO-41 | Active | ROHS3 Compliant |
| 1N4003T-G | Comchip Technology | 200 | 1 | 1.1 @ 1 A | - | 5 @ 200 V | DO-204AL, DO-41 | Active | ROHS3 Compliant |
| 1N4942GP-TP | Micro Commercial Co | 200 | 1 | 1.3 @ 1 A | 0.15 | 5 @ 200 V | DO-204AL, DO-41 | Active | ROHS3 Compliant |
| EGP10D | Fairchild Semiconductor | 200 | 1 | 0.95 @ 1 A | 0.05 | 5 @ 200 V | DO-204AL (DO-41) | Active | - |
| MUR220RLG | onsemi | 200 | 2 | 0.95 @ 2 A | 0.035 | 2 @ 200 V | DO-204AL, DO-41, Axial | Active | ROHS3 Compliant |
Engineering Selection Recommendations
Parametric Equivalents (Preferred for Direct Replacement):
The following parts maintain identical electrical and mechanical specifications to the GP10D-M3/73 and are classified as active products:
-
1N4003GP-E3/73 (Vishay): Active status, ROHS3 compliant, identical voltage and current ratings, improved reverse recovery time (2 µs vs. 3 µs), same package configuration. Suitable for direct substitution.
-
1N4003GPE-E3/53 (Vishay): Active status, ROHS3 compliant, identical electrical specifications, improved reverse recovery time (2 µs vs. 3 µs), same package configuration. Suitable for direct substitution.
-
GP10-4003E-E3/53 (Vishay): Active status, ROHS3 compliant, identical electrical specifications including reverse recovery time (3 µs), same package configuration. Suitable for direct substitution.
-
GP10D-E3/73 (Vishay): Active status, ROHS3 compliant, identical electrical specifications including reverse recovery time (3 µs), same package configuration. Suitable for direct substitution.
Manufacturer-Recommended Alternatives:
-
1N3611 (Microchip Technology): Active status, 200 V / 1 A ratings, axial package. RoHS non-compliant status requires compliance verification for new designs. Lower reverse leakage current (1 µA vs. 5 µA) provides enhanced performance.
-
1N4003-G (Comchip Technology): Active status, ROHS3 compliant, 200 V / 1 A ratings, DO-41 package. Operating temperature range limited to -55°C to 150°C (vs. -65°C to 175°C). Suitable for applications within reduced temperature range.
-
1N4003T-G (Comchip Technology): Active status, ROHS3 compliant, 200 V / 1 A ratings, DO-41 package, tape and reel packaging. Operating temperature range limited to -55°C to 150°C. Suitable for applications within reduced temperature range.
-
1N4942GP-TP (Micro Commercial Co): Active status, ROHS3 compliant, 200 V / 1 A ratings, fast recovery technology (150 ns trr). Forward voltage increased to 1.3 V at 1 A. Suitable for applications requiring faster switching characteristics.
-
EGP10D (Fairchild Semiconductor): Active status, 200 V / 1 A ratings, fast recovery technology (50 ns trr), improved forward voltage (950 mV at 1 A). Operating temperature range limited to -65°C to 150°C. Suitable for applications requiring enhanced switching performance.
-
MUR220RLG (onsemi): Active status, ROHS3 compliant, 200 V rating with doubled current rating (2 A vs. 1 A), fast recovery technology (35 ns trr), improved forward voltage (950 mV at 2 A). Suitable for applications requiring higher current capacity or faster switching.
Frequently Asked Questions (FAQ)
Q: Can I use 1N4003GP-E3/73 as a direct replacement for GP10D-M3/73?
A: Yes. The 1N4003GP-E3/73 maintains identical voltage (200 V), current (1 A), forward voltage (1.1 V @ 1 A), and package specifications (DO-204AL DO-41). The part is active and ROHS3 compliant. The improved reverse recovery time (2 µs vs. 3 µs) represents enhanced performance without circuit impact.
Q: What is the difference between parametric equivalents and manufacturer-recommended alternatives?
A: Parametric equivalents (1N4003GP-E3/73, 1N4003GPE-E3/53, GP10-4003E-E3/53, GP10D-E3/73) maintain all electrical and mechanical specifications identical to the GP10D-M3/73. Manufacturer-recommended alternatives (1N3611, 1N4003-G, 1N4003T-G, 1N4942GP-TP, EGP10D, MUR220RLG) provide functional compatibility but may have different performance characteristics, current ratings, or temperature ranges.
Q: Why is the 1N3611 listed as RoHS non-compliant?
A: The 1N3611 is manufactured by Microchip Technology and carries RoHS non-compliant status. For applications requiring RoHS3 compliance, select from the Vishay parametric equivalents or other ROHS3-compliant alternatives such as 1N4003-G, 1N4003T-G, 1N4942GP-TP, or MUR220RLG.
Q: Can I use MUR220RLG as a substitute for GP10D-M3/73?
A: The MUR220RLG is functionally compatible with identical 200 V reverse voltage rating and same package type (DO-204AL DO-41 Axial). However, the MUR220RLG is rated for 2 A average rectified current (vs. 1 A for GP10D-M3/73) and features fast recovery technology (35 ns trr vs. 3 µs standard recovery). This part is suitable for applications where higher current capacity or faster switching is beneficial or neutral to circuit operation.
Q: What is the operating temperature range difference between GP10D-M3/73 and 1N4003-G?
A: The GP10D-M3/73 operates from -65°C to 175°C junction temperature. The 1N4003-G (Comchip Technology) operates from -55°C to 150°C. For applications requiring the full -65°C to 175°C range, use Vishay parametric equivalents (1N4003GP-E3/73, 1N4003GPE-E3/53, GP10-4003E-E3/53, GP10D-E3/73) or EGP10D.
Q: Are all substitute parts available in the same packaging format?
A: All listed substitute parts are available in through-hole axial configuration (DO-204AL DO-41 package). Packaging options vary by manufacturer: Vishay parts are available in cut tape or bulk; Comchip parts are available in tape and box or tape and reel; Microchip 1N3611 is available in bulk; onsemi MUR220RLG is available in cut tape. Verify specific packaging availability with your supplier for procurement requirements.
Q: What is the significance of reverse recovery time (trr) differences?
A: Reverse recovery time indicates the speed at which the diode transitions from forward conduction to reverse blocking. The GP10D-M3/73 has standard recovery (3 µs trr). Parametric equivalents from Vishay show improved recovery times (2 µs). Fast recovery alternatives (1N4942GP-TP at 150 ns, EGP10D at 50 ns, MUR220RLG at 35 ns) are suitable for higher-frequency switching applications. Standard recovery parts are appropriate for line-frequency rectification and general-purpose applications.
Q: Is the forward voltage difference between GP10D-M3/73 (1.1 V) and EGP10D (0.95 V) significant?
A: The 150 mV forward voltage reduction in EGP10D results in lower power dissipation and improved efficiency. For 1 A continuous current, this represents approximately 150 mW lower dissipation. This difference is significant in power-sensitive applications but may be neutral in general-purpose rectification circuits. Verify thermal design compatibility before substitution.
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