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GP10DE-M3/73 Equivalent & Substitute Parts
Part Overview
The GP10DE-M3/73 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This component is rated for 200 V DC reverse voltage with 1 A average rectified current in a DO-204AL (DO-41) axial through-hole package. The part is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing production and design continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional compatibility within the same application category.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 | V @ 1 A |
| Reverse Recovery Time (trr) | 3 | µs |
| Current - Reverse Leakage @ Vr | 5 | µA @ 200 V |
| Capacitance @ Vr, F | 8 | pF @ 4V, 1MHz |
| Package / Case | DO-204AL, DO-41, Axial | — |
| Mounting Type | Through Hole | — |
| Operating Temperature - Junction | -65 to 175 | °C |
| Technology | Standard | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the GP10DE-M3/73 is determined by strict equivalence across the following critical parameters:
Mandatory Equivalence Criteria:
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Package / Case: DO-204AL, DO-41, Axial
- Mounting Type: Through Hole
- Technology: Standard
- RoHS Status: ROHS3 Compliant
Acceptable Variation Parameters:
- Reverse Recovery Time (trr): 2–3 µs (minor performance variation acceptable)
- Current - Reverse Leakage @ Vr: 5–10 µA @ 200 V (within standard tolerance)
- Capacitance @ Vr, F: 8–15 pF @ 4V, 1MHz (minor parasitic variation acceptable)
- Operating Temperature - Junction: -55°C to 175°C (functional overlap with original -65°C to 175°C)
Substitute parts are grouped into two categories: Vishay General Semiconductor - Diodes Division active equivalents (SUPERECTIFIER® series) and manufacturer-recommended alternatives from Comchip Technology, Diodes Incorporated, Micro Commercial Co, Taiwan Semiconductor Corporation, and onsemi.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [V] | trr [µs] | Ir @ Vr [µA] | C @ Vr [pF] | Package | Product Status |
|---|---|---|---|---|---|---|---|---|---|
| GP10DE-M3/73 | Vishay General Semiconductor | 200 | 1 | 1.1 @ 1 A | 3 | 5 @ 200 V | 8 @ 4V, 1MHz | DO-204AL (DO-41) | Obsolete |
| 1N4003GP-E3/73 | Vishay General Semiconductor | 200 | 1 | 1.1 @ 1 A | 2 | 5 @ 200 V | 8 @ 4V, 1MHz | DO-204AL (DO-41) | Active |
| 1N4003GPE-E3/53 | Vishay General Semiconductor | 200 | 1 | 1.1 @ 1 A | 2 | 5 @ 200 V | 8 @ 4V, 1MHz | DO-204AL (DO-41) | Active |
| GP10-4003E-E3/53 | Vishay General Semiconductor | 200 | 1 | 1.1 @ 1 A | 3 | 5 @ 200 V | 8 @ 4V, 1MHz | DO-204AL (DO-41) | Active |
| GP10D-E3/73 | Vishay General Semiconductor | 200 | 1 | 1.1 @ 1 A | 3 | 5 @ 200 V | 8 @ 4V, 1MHz | DO-204AL (DO-41) | Active |
| 1N4003-G | Comchip Technology | 200 | 1 | 1.1 @ 1 A | — | 5 @ 200 V | 15 @ 4V, 1MHz | DO-41 | Active |
| 1N4003-T | Diodes Incorporated | 200 | 1 | 1.0 @ 1 A | — | 5 @ 200 V | 15 @ 4V, 1MHz | DO-41 | Last Time Buy |
| 1N4003-TP | Micro Commercial Co | 200 | 1 | 1.1 @ 1 A | 2 | 5 @ 200 V | 15 @ 4V, 1MHz | DO-41 | Not For New Designs |
| 1N4003G | Taiwan Semiconductor Corporation | 200 | 1 | 1.0 @ 1 A | — | 5 @ 200 V | 10 @ 4V, 1MHz | DO-204AL (DO-41) | Active |
| 1N4003RLG | onsemi | 200 | 1 | 1.1 @ 1 A | — | 10 @ 200 V | — | Axial | Not For New Designs |
| 1N4003T-G | Comchip Technology | 200 | 1 | 1.1 @ 1 A | — | 5 @ 200 V | 15 @ 4V, 1MHz | DO-41 | Active |
Engineering Selection Recommendations
Primary Recommendation - Vishay General Semiconductor Active Equivalents:
The 1N4003GP-E3/73, 1N4003GPE-E3/53, GP10-4003E-E3/53, and GP10D-E3/73 are direct active equivalents manufactured by Vishay General Semiconductor - Diodes Division. All four parts maintain identical electrical specifications with the GP10DE-M3/73 across voltage, current, and forward voltage parameters. These parts are ROHS3 compliant and carry active product status, ensuring long-term availability and supply chain stability. The 1N4003GP-E3/73 and 1N4003GPE-E3/53 feature marginally improved reverse recovery time (2 µs versus 3 µs), representing enhanced performance characteristics. The GP10-4003E-E3/53 and GP10D-E3/73 maintain the original 3 µs recovery time specification.
Secondary Recommendation - Multi-Manufacturer Alternatives:
The 1N4003G (Taiwan Semiconductor Corporation) and 1N4003T-G (Comchip Technology) are active products meeting all mandatory electrical equivalence criteria. Both maintain 200 V reverse voltage, 1 A average rectified current, and DO-41 package compatibility. The 1N4003G is available in high inventory (27,889 pcs) with active product status. The 1N4003T-G is available in moderate inventory (934 pcs) with active product status.
Not Recommended for New Designs:
The 1N4003-T (Diodes Incorporated) carries Last Time Buy status. The 1N4003-TP (Micro Commercial Co) and 1N4003RLG (onsemi) carry Not For New Designs status, indicating end-of-life trajectories. These parts should be used only for legacy system maintenance or repair applications where no alternative exists.
Compliance Verification:
All recommended substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the original GP10DE-M3/73 regulatory classification.
Frequently Asked Questions (FAQ)
Q: Can the 1N4003GP-E3/73 directly replace the GP10DE-M3/73 in existing designs?
A: Yes. The 1N4003GP-E3/73 maintains identical electrical specifications across all critical parameters: 200 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, and DO-204AL (DO-41) axial through-hole package. The improved reverse recovery time (2 µs versus 3 µs) represents enhanced performance with no compatibility issues. Both parts are ROHS3 compliant.
Q: What is the difference between the Vishay SUPERECTIFIER® series equivalents?
A: The 1N4003GP-E3/73 and 1N4003GPE-E3/53 feature 2 µs reverse recovery time. The GP10-4003E-E3/53 and GP10D-E3/73 feature 3 µs reverse recovery time, matching the original GP10DE-M3/73 specification. All four parts are electrically equivalent across voltage, current, and forward voltage parameters. Selection between these parts depends on packaging format availability (Cut Tape versus bulk) and reverse recovery time requirements.
Q: Are there differences in capacitance specifications among substitute parts?
A: Yes. The Vishay SUPERECTIFIER® series (1N4003GP-E3/73, 1N4003GPE-E3/53, GP10-4003E-E3/53, GP10D-E3/73) maintain 8 pF capacitance at 4 V, 1 MHz. The Comchip Technology 1N4003-G and 1N4003T-G, Micro Commercial Co 1N4003-TP, and onsemi 1N4003RLG feature 15 pF capacitance. The Taiwan Semiconductor Corporation 1N4003G features 10 pF capacitance. These variations fall within acceptable parasitic tolerance for standard rectifier applications.
Q: What is the significance of reverse leakage current differences?
A: The GP10DE-M3/73 specifies 5 µA reverse leakage at 200 V. Most substitute parts maintain this specification. The onsemi 1N4003RLG specifies 10 µA reverse leakage at 200 V, which remains within standard tolerance for general-purpose rectifier applications. This parameter affects leakage power dissipation in high-impedance circuits but does not impact standard rectification performance.
Q: Can I use the 1N4003-T or 1N4003-TP for new production?
A: The 1N4003-T carries Last Time Buy status and the 1N4003-TP carries Not For New Designs status. These designations indicate manufacturer end-of-life planning. For new production designs, use active-status parts: 1N4003GP-E3/73, 1N4003GPE-E3/53, GP10-4003E-E3/53, GP10D-E3/73, 1N4003G, or 1N4003T-G.
Q: Are all substitute parts available in the same package format?
A: No. The Vishay SUPERECTIFIER® series parts are available in DO-204AL (DO-41) axial format. The Comchip Technology 1N4003-G and 1N4003T-G are available in DO-41 format. The Taiwan Semiconductor Corporation 1N4003G is available in DO-204AL (DO-41) format. The onsemi 1N4003RLG is available in axial format. All parts are through-hole mounted and mechanically compatible with the original GP10DE-M3/73 footprint.
Q: What is the operating temperature range difference between substitute parts?
A: The GP10DE-M3/73 specifies -65°C to 175°C junction temperature. Most substitute parts specify -55°C to 150°C or -55°C to 175°C. The Vishay SUPERECTIFIER® series and onsemi 1N4003RLG maintain the full -65°C to 175°C range. For applications requiring operation below -55°C, select Vishay SUPERECTIFIER® series parts or verify that the reduced lower temperature limit of alternative manufacturers is acceptable for the specific application.
Q: Which substitute part offers the best inventory availability?
A: The 1N4003-T (Diodes Incorporated) offers the highest inventory at 38,027 pcs. The 1N4003G (Taiwan Semiconductor Corporation) offers 27,889 pcs. The 1N4003GP-E3/73 (Vishay) offers 6,589 pcs. For applications requiring immediate availability, the 1N4003-T provides the largest stock position, though its Last Time Buy status should be considered for long-term supply planning.
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