GP10DE-M3/54 Equivalent & Substitute Parts

Part Overview

The GP10DE-M3/54 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) through-hole axial package. This part is classified as obsolete, which necessitates identification of active equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts satisfy the same functional requirements within the allowed parameter tolerances for this diode category.

Substiute Parts

GP10DE-M3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 856GP10DE-M3/54 Datasheet
GP10DE-M3/54
Current Part
1N4003GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 67121N4003GP-E3/54 Datasheet
1N4003GP-E3/54
Parametric Equivalent
1N4003GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 66831N4003GP-E3/73 Datasheet
1N4003GP-E3/73
Parametric Equivalent
1N4003GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 7971N4003GPE-E3/54 Datasheet
1N4003GPE-E3/54
Parametric Equivalent
GP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 911GP10D-E3/54 Datasheet
GP10D-E3/54
Parametric Equivalent
GP10DE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1134GP10DE-E3/54 Datasheet
GP10DE-E3/54
Parametric Equivalent
1N4003-G
Comchip TechnologyIn Stock: 10411N4003-G Datasheet
1N4003-G
MFR Recommended
1N4003-TP
Micro Commercial CoIn Stock: 342541N4003-TP Datasheet
1N4003-TP
MFR Recommended
1N4003G
Taiwan Semiconductor CorporationIn Stock: 279541N4003G Datasheet
1N4003G
MFR Recommended
1N4003T-G
Comchip TechnologyIn Stock: 9841N4003T-G Datasheet
1N4003T-G
MFR Recommended
1N4935-T
Diodes IncorporatedIn Stock: 54791N4935-T Datasheet
1N4935-T
MFR Recommended
1N4935G
Taiwan Semiconductor CorporationIn Stock: 8961N4935G Datasheet
1N4935G
MFR Recommended
1N4935RLG
onsemiIn Stock: 154941N4935RLG Datasheet
1N4935RLG
MFR Recommended
EGP10D
Fairchild SemiconductorIn Stock: 1448EGP10D Datasheet
EGP10D
MFR Recommended
MUR220G
onsemiIn Stock: 4166MUR220G Datasheet
MUR220G
MFR Recommended
MUR220RLG
onsemiIn Stock: 265383MUR220RLG Datasheet
MUR220RLG
MFR Recommended
MURA220T3G
onsemiIn Stock: 245411MURA220T3G Datasheet
MURA220T3G
MFR Recommended
RGP10D
Fairchild SemiconductorIn Stock: 17142RGP10D Datasheet
RGP10D
MFR Recommended
SF14GHR1G
Taiwan Semiconductor CorporationIn Stock: 823SF14GHR1G Datasheet
SF14GHR1G
MFR Recommended
UF1003-T
Diodes IncorporatedIn Stock: 1342UF1003-T Datasheet
UF1003-T
MFR Recommended
UF4003
Diotec SemiconductorIn Stock: 15291UF4003 Datasheet
UF4003
MFR Recommended
1N4003RLG
onsemiIn Stock: 16041N4003RLG Datasheet
1N4003RLG
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Reverse Recovery Time (trr) 3 µs
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Capacitance @ Vr, F 8 pF @ 4V, 1MHz
Mounting Type Through Hole -
Package / Case DO-204AL, DO-41, Axial -
Operating Temperature - Junction -65 to 175 °C
Technology Standard -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the GP10DE-M3/54 is determined by the following critical parameters:

Electrical Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V or lower at 1 A
  • Current - Reverse Leakage @ Vr: 5 µA or lower at 200 V
  • Operating Temperature - Junction: -65°C to 175°C or wider range

Mechanical Equivalence Criteria:

  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial equivalent
  • Technology: Standard recovery diode

Compliance Criteria:

  • RoHS3 Compliant
  • REACH Unaffected
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories: Parametric Equivalents (Vishay SUPERECTIFIER® series with active product status) and Manufacturer Recommended alternatives (from Comchip Technology, Micro Commercial Co, Taiwan Semiconductor Corporation, and Diodes Incorporated). All listed substitutes maintain the core electrical specifications and through-hole axial package format required for direct circuit board replacement.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [V] trr [µs] Ir @ Vr [µA] Packaging Product Status Tj Range [°C]
GP10DE-M3/54 Vishay 200 1 1.1 3 5 - Obsolete -65 to 175
1N4003GP-E3/54 Vishay 200 1 1.1 2 5 Cut Tape (CT) Active -65 to 175
1N4003GP-E3/73 Vishay 200 1 1.1 2 5 Cut Tape (CT) Active -65 to 175
1N4003GPE-E3/54 Vishay 200 1 1.1 2 5 Tape & Reel (TR) Active -65 to 175
GP10D-E3/54 Vishay 200 1 1.1 3 5 Tape & Reel (TR) Active -65 to 175
GP10DE-E3/54 Vishay 200 1 1.1 3 5 Tape & Reel (TR) Active -65 to 175
1N4003-G Comchip Technology 200 1 1.1 - 5 Tape & Box (TB) Active -55 to 150
1N4003-TP Micro Commercial Co 200 1 1.1 2 5 Cut Tape (CT) Not For New Designs -55 to 150
1N4003G Taiwan Semiconductor Corporation 200 1 1.0 - 5 - Active -55 to 150
1N4003T-G Comchip Technology 200 1 1.1 - 5 Tape & Reel (TR) Active -55 to 150
1N4935-T Diodes Incorporated 200 1 1.2 0.2 5 Cut Tape (CT) Active -65 to 150

Engineering Selection Recommendations

Primary Substitutes (Vishay SUPERECTIFIER® Series - Parametric Equivalents):

The Vishay parts 1N4003GP-E3/54, 1N4003GP-E3/73, 1N4003GPE-E3/54, GP10D-E3/54, and GP10DE-E3/54 are direct parametric equivalents with active product status. These parts maintain identical voltage, current, and temperature specifications as the obsolete GP10DE-M3/54. The primary difference is reverse recovery time (trr): the 1N4003 variants feature 2 µs recovery versus 3 µs for the GP10 variants. All Vishay substitutes are ROHS3 compliant and carry the same REACH and ECCN classifications. Selection between these parts depends on packaging requirements: Cut Tape (CT) for 1N4003GP variants, or Tape & Reel (TR) for 1N4003GPE-E3/54, GP10D-E3/54, and GP10DE-E3/54.

Secondary Substitutes (Manufacturer Recommended - Active Status):

The 1N4003G from Taiwan Semiconductor Corporation and 1N4003T-G from Comchip Technology are active alternatives with identical voltage and current ratings. These parts operate within a narrower temperature range (-55°C to 150°C versus -65°C to 175°C), which is acceptable for most industrial and commercial applications. Both are ROHS3 compliant and REACH unaffected.

Fast Recovery Alternative:

The 1N4935-T from Diodes Incorporated is a fast recovery variant with 200 ns reverse recovery time, compared to 3 µs for the original part. This part is suitable for applications requiring faster switching performance. Forward voltage is slightly higher at 1.2 V maximum. Product status is active with ROHS3 compliance.

Not Recommended for New Designs:

The 1N4003-TP from Micro Commercial Co carries a "Not For New Designs" status and should be avoided for new circuit implementations, despite its active inventory and parametric equivalence.

Frequently Asked Questions (FAQ)

Q: Can I directly replace GP10DE-M3/54 with 1N4003GP-E3/54?

A: Yes. Both parts meet the same electrical specifications: 200 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, and identical temperature range (-65°C to 175°C). The primary difference is packaging format (Cut Tape versus the original part's unspecified packaging) and reverse recovery time (2 µs versus 3 µs), which is an improvement. Both are ROHS3 compliant.

Q: What is the difference between GP10D-E3/54 and GP10DE-E3/54?

A: Both parts are Vishay SUPERECTIFIER® diodes with identical electrical specifications and active product status. The difference lies in packaging format: GP10D-E3/54 and GP10DE-E3/54 are both supplied in Tape & Reel (TR) format. Electrical performance is equivalent with 3 µs reverse recovery time and -65°C to 175°C operating range.

Q: Why does 1N4935-T have different specifications?

A: The 1N4935-T is a fast recovery diode with 200 ns reverse recovery time, compared to 3 µs for standard recovery types. This makes it suitable for higher-frequency switching applications. Forward voltage is 1.2 V maximum (versus 1.1 V), which is within acceptable tolerance for most circuits. It remains a valid substitute for the GP10DE-M3/54 in applications where faster switching is beneficial or required.

Q: Can I use 1N4003-TP as a substitute?

A: The 1N4003-TP meets all electrical and mechanical requirements for substitution. However, it carries a "Not For New Designs" product status designation. For new circuit designs, select from the active alternatives: 1N4003GP-E3/54, 1N4003GP-E3/73, 1N4003GPE-E3/54, GP10D-E3/54, or GP10DE-E3/54.

Q: What is the temperature range difference between Vishay and Comchip alternatives?

A: Vishay parts (1N4003GP, 1N4003GPE, GP10D, GP10DE) operate from -65°C to 175°C. Comchip Technology (1N4003-G, 1N4003T-G) and Taiwan Semiconductor Corporation (1N4003G) parts operate from -55°C to 150°C. The Vishay range is wider and suitable for extended temperature applications. For standard industrial applications (-40°C to 85°C), both ranges are acceptable.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status and are REACH unaffected, matching the compliance profile of the original GP10DE-M3/54.

Q: What packaging options are available for substitutes?

A: Substitute parts are available in Cut Tape (CT), Tape & Reel (TR), and Tape & Box (TB) formats. All maintain the DO-204AL (DO-41) axial through-hole package for direct circuit board compatibility. Selection depends on procurement and assembly requirements.

Q: Can I substitute based on reverse recovery time alone?

A: No. Reverse recovery time is one parameter among many. All substitutes must maintain the core specifications: 200 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage (or lower), 5 µA reverse leakage, and through-hole axial package. Reverse recovery time differences (2 µs, 3 µs, or 200 ns) do not prevent substitution but may affect circuit performance in high-frequency applications.

Request Quote (Ships tomorrow)