GP10-4002E-E3/53 Equivalent & Substitute Parts

Part Overview

The GP10-4002E-E3/53 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component operates at 100 V DC reverse voltage with 1 A average rectified current and is housed in a DO-204AL (DO-41) axial package. The device is classified as Active product status and complies with RoHS3 and REACH regulations. Substitute parts are identified to address inventory availability, packaging format preferences, or specific application requirements while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1	V @ 1 A
Reverse Recovery Time (trr)	3	µs
Current - Reverse Leakage @ Vr	5	µA @ 100 V
Capacitance @ Vr, F	8	pF @ 4V, 1MHz
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-65 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the GP10-4002E-E3/53 are qualified based on the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A (tolerance range: 1.1 to 1.2 V)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C to 175°C (minimum range)
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Parameters (Allowable Variation):

Reverse Recovery Time (trr): 200 ns to 3 µs (standard to fast recovery)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 8 to 15 pF @ 4V, 1MHz

All substitute parts maintain identical voltage and current ratings, package configuration, and regulatory compliance. Variations in recovery time and capacitance reflect different semiconductor technologies (standard versus fast recovery) while remaining functionally compatible within the application envelope.

Parameter Comparison

Parameter	GP10-4002E-E3/53	1N4002GPE-E3/73	1N4002-G	1N4934G
Manufacturer	Vishay General Semiconductor	Vishay General Semiconductor	Comchip Technology	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	100 V	100 V	100 V	100 V
Current - Average Rectified (Io)	1 A	1 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	1.1 V @ 1 A	1.1 V @ 1 A	1.2 V @ 1 A
Speed	Standard Recovery >500ns	Standard Recovery >500ns	Standard Recovery >500ns	Fast Recovery ≤500ns
Reverse Recovery Time (trr)	3 µs	2 µs	Not specified	200 ns
Current - Reverse Leakage @ Vr	5 µA @ 100 V	5 µA @ 100 V	5 µA @ 100 V	5 µA @ 100 V
Capacitance @ Vr, F	8 pF @ 4V, 1MHz	8 pF @ 4V, 1MHz	15 pF @ 4V, 1MHz	10 pF @ 4V, 1MHz
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial
Operating Temperature - Junction	-65°C to 175°C	-65°C to 175°C	-55°C to 150°C	-55°C to 150°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed maintain Active product status and full RoHS3 compliance, ensuring regulatory continuity and long-term availability support. Selection between the main part and substitutes is determined by specific application requirements and packaging availability:

1N4002GPE-E3/73 (Vishay General Semiconductor - Diodes Division): This substitute is a parametric equivalent offering identical electrical characteristics to the GP10-4002E-E3/53, with marginally improved reverse recovery time (2 µs versus 3 µs). Both parts share the same manufacturer, operating temperature range (-65°C to 175°C), and packaging format. The 1N4002GPE-E3/73 is supplied in Cut Tape (CT) packaging, providing alternative inventory and handling options.

1N4002-G (Comchip Technology): This substitute maintains all critical electrical parameters (100 V, 1 A, 1.1 V forward voltage) and package configuration. The operating temperature range is reduced to -55°C to 150°C, which is acceptable for applications not requiring the extended low-temperature performance of the primary part. Capacitance is specified at 15 pF, representing a higher value within the allowable range. This part is available in higher inventory quantities.

1N4934G (Taiwan Semiconductor Corporation): This substitute features fast recovery characteristics (200 ns trr) compared to the standard recovery of the main part (3 µs). Forward voltage is specified at 1.2 V, representing the upper tolerance limit. The operating temperature range is -55°C to 150°C. Fast recovery technology is suitable for applications requiring reduced switching losses or higher frequency operation, provided the circuit design accommodates the different recovery profile.

Frequently Asked Questions (FAQ)

Q: Can the 1N4002GPE-E3/73 be used as a direct replacement for the GP10-4002E-E3/53?

A: Yes. Both parts are manufactured by Vishay General Semiconductor - Diodes Division and share identical voltage ratings (100 V), current ratings (1 A), forward voltage characteristics (1.1 V @ 1 A), package configuration (DO-204AL/DO-41), and operating temperature range (-65°C to 175°C). The 1N4002GPE-E3/73 exhibits slightly faster reverse recovery (2 µs versus 3 µs), which is a performance improvement. The primary difference is packaging format: the 1N4002GPE-E3/73 is supplied in Cut Tape (CT) format.

Q: What is the difference between standard recovery and fast recovery diodes?

A: Recovery time refers to the interval required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. The GP10-4002E-E3/53 and 1N4002-G are standard recovery devices (>500 ns), while the 1N4934G is a fast recovery device (≤500 ns, specifically 200 ns). Fast recovery diodes exhibit lower reverse recovery charge and reduced switching losses, making them suitable for high-frequency applications. Standard recovery diodes are appropriate for line-frequency and low-frequency rectification circuits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—1N4002GPE-E3/73, 1N4002-G, and 1N4934G—are ROHS3 Compliant with Moisture Sensitivity Level (MSL) 1 (Unlimited). Regulatory compliance is maintained across all alternatives.

Q: What is the significance of the operating temperature range difference between the main part and some substitutes?

A: The GP10-4002E-E3/53 operates from -65°C to 175°C, while the 1N4002-G and 1N4934G operate from -55°C to 150°C. The main part provides extended low-temperature performance (10°C lower minimum) and extended high-temperature performance (25°C higher maximum). For applications operating within the -55°C to 150°C envelope, the substitute parts are fully compatible. Applications requiring operation below -55°C or above 150°C must use the GP10-4002E-E3/53 or the 1N4002GPE-E3/73.

Q: Can the 1N4934G be used in place of the GP10-4002E-E3/53 in all applications?

A: The 1N4934G is electrically compatible for voltage and current ratings but exhibits different recovery characteristics (fast recovery, 200 ns versus standard recovery, 3 µs). In rectification circuits operating at line frequency or low switching frequencies, this difference is negligible. In high-frequency switching applications, the faster recovery of the 1N4934G reduces switching losses and may improve efficiency. However, in circuits with tight timing constraints or specific recovery time dependencies, the different recovery profile must be evaluated. The reduced operating temperature range (-55°C to 150°C) also applies.

Q: What packaging formats are available for these substitute parts?

A: All substitute parts are housed in DO-204AL (DO-41) axial through-hole packages, maintaining mechanical and electrical compatibility with the GP10-4002E-E3/53. The 1N4002GPE-E3/73 is supplied in Cut Tape (CT) format, while packaging format information for the 1N4002-G and 1N4934G is not specified in the provided data. Verify packaging format with the supplier when ordering.

Q: How do capacitance variations affect circuit performance?

A: Capacitance values range from 8 pF (GP10-4002E-E3/53 and 1N4002GPE-E3/73) to 15 pF (1N4002-G) and 10 pF (1N4934G), all measured at 4 V and 1 MHz. In most rectification applications, diode capacitance has minimal impact on circuit performance. In high-frequency or RF applications where diode capacitance affects circuit impedance or filtering characteristics, the specific capacitance value becomes relevant. For standard power supply rectification, all listed parts are functionally equivalent.

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