GKI03039 Equivalent & Substitute Parts Reference

Part Overview

The GKI03039 is an N-Channel MOSFET manufactured by Sanken Electric USA Inc., specified for 30 V drain-to-source voltage, 18A continuous drain current, and low Rds(on) performance. This device is packaged in an 8-DFN (5x6) surface-mount form factor and is RoHS compliant. The GKI03039 is currently classified as "Obsolete." Due to its obsolete status, it is necessary to identify alternative models with matching electrical and mechanical characteristics for continued design support and replacement in applications requiring this category of transistors, FETs, MOSFETs.

Key Parameters

Parameter	Value
Manufacturer Part Number	GKI03039
Category	Transistors, FETs, MOSFETs
Packaging	Cut Tape (CT) & Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 47.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 650µA
Gate Charge (Qg) (Max) @ Vgs	38.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2460 pF @ 15 V
Power Dissipation (Max)	3.1W (Ta), 59W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (5x6)
Package / Case	8-PowerTDFN
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the GKI03039 are selected exclusively according to the following parameters: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), gate threshold voltage (Vgs(th)), gate charge (Qg), Rds(on), drive voltage, maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation (max), operating temperature, mounting type, package/case, RoHS compliance, and MSL rating. Substitution is permissible when parts match or exceed the original specifications within this set of parameters and observe the same mounting and compliance standards.

Parameter Comparison

Manufacturer Part Number	Manufacturer	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)
GKI03039	Sanken Electric USA Inc.	N-Channel	MOSFET (Metal Oxide)	30 V	18A (Ta)	4.5V, 10V	3.8mOhm @ 47.2A, 10V	2.5V @ 650µA	38.8 nC @ 10 V	±20V	2460 pF @ 15 V	3.1W (Ta), 59W (Tc)	150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerTDFN	RoHS Compliant	1 (Unlimited)
IRFHM830TRPBF	Infineon Technologies	N-Channel	MOSFET (Metal Oxide)	30 V	21A (Ta), 40A (Tc)	4.5V, 10V	3.8mOhm @ 20A, 10V	2.35V @ 50µA	31 nC @ 10 V	±20V	2155 pF @ 25 V	2.7W (Ta), 37W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN-Dual (3.3x3.3)	8-PowerVDFN	ROHS3 Compliant	1 (Unlimited)
RS1E200BNTB	Rohm Semiconductor	N-Channel	MOSFET (Metal Oxide)	30 V	20A (Ta), 68A (Tc)	4.5V, 10V	3.9mOhm @ 20A, 10V	2.5V @ 1mA	59 nC @ 10 V	±20V	3100 pF @ 15 V	3W (Ta), 25W (Tc)	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN	ROHS3 Compliant	1 (Unlimited)
TPH4R003NL,L1Q	Toshiba Semiconductor and Storage	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	4mOhm @ 20A, 10V	2.3V @ 200µA	14.8 nC @ 10 V	±20V	1400 pF @ 15 V	1.6W (Ta), 36W (Tc)	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN	RoHS Compliant	1 (Unlimited)

Engineering Selection Recommendations

All listed substitute parts conform to the RoHS requirement and exhibit an MSL of 1 (Unlimited), aligning with the compliance standards of the GKI03039. Substitute components are classified as "Active" and are available as new and original stock. The original part is "Obsolete," while the alternatives maintain continued product support. No deviations from compliance status or certifications are present among the compared parts.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for selecting a GKI03039 MOSFET substitute?
A1: The main criteria are identical or compatible FET type, technology, drain to source voltage (Vdss), current - continuous drain (Id), Rds(on), gate charge (Qg), drive voltage, maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature, RoHS compliance, MSL rating, and compatible surface-mount package.

Q2: Are all substitutes mechanically compatible for surface mount applications?
A2: All compared substitutes are surface-mount devices; however, package dimensions and types vary (8-DFN, 8-PQFN, 8-HSOP, 8-SOP Advance). Verification of footprint compatibility with the target PCB layout is necessary based solely on the package information provided.

Q3: Can these alternatives be used directly in place of the GKI03039 on a PCB?
A3: Substitution is based on matching package type and pin configuration, as well as parameter alignment. Confirm package and pad compatibility using only the provided package/case data.

Q4: What is the significance of RoHS status and MSL in selecting a substitute part?
A4: RoHS compliance ensures that the substitute part meets environmental regulations, and an MSL of 1 indicates unlimited floor life after opening, aligning with GKI03039 handling and process requirements.

Q5: Do these substitute MOSFETs maintain equivalent electrical stress ratings?
A5: All listed substitutes meet or exceed the provided GKI03039 electrical parameters for voltage, current, and maximum permissible ratings, as listed in the comparison table.

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