GI856-E3/73 Equivalent & Substitute Parts

Part Overview

The GI856-E3/73 is a general-purpose rectifier diode rated for 600 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. Manufactured by Vishay General Semiconductor - Diodes Division, this component is classified as obsolete. Due to its obsolete status and limited availability relative to active alternatives, equivalent substitute parts are necessary for new designs and ongoing production requirements. Substitute parts maintain the same electrical ratings and package form factor while offering active product status from current manufacturers.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 3 A	V
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	200	ns
Current - Reverse Leakage @ Vr	10	µA @ 600 V
Mounting Type	Through Hole	—
Package / Case	DO-201AD, Axial	—
Operating Temperature - Junction	-50 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the GI856-E3/73 are selected based on strict electrical and mechanical compatibility criteria. All substitute diodes must meet or exceed the following parameters:

Critical Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 600 V minimum
Current - Average Rectified (Io): 3 A minimum
Package / Case: DO-201AD, Axial (mechanical compatibility)
Mounting Type: Through Hole
RoHS Status: ROHS3 Compliant

Secondary Compatibility Parameters:

Voltage - Forward (Vf) (Max) @ If: Must not exceed application circuit requirements
Operating Temperature - Junction: Must encompass application operating range
Speed Classification: Fast Recovery or Standard Recovery acceptable based on circuit requirements

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching 600 V / 3 A ratings with standard recovery characteristics) and Enhanced Performance Alternatives (matching ratings with fast recovery characteristics for improved switching performance).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Product Status
GI856-E3/73	Vishay General Semiconductor	600	3	1.25 @ 3A	Fast Recovery ≤ 500ns	200	10 @ 600V	DO-201AD	Obsolete
1N5406-G	Comchip Technology	600	3	1 @ 3A	Standard Recovery >500ns	—	5 @ 600V	DO-201AD	Active
1N5406G	Taiwan Semiconductor Corporation	600	3	1 @ 3A	Standard Recovery >500ns	—	5 @ 600V	DO-201AD	Active
1N5406GP-AP	Micro Commercial Co	600	3	1.1 @ 3A	Standard Recovery >500ns	—	5 @ 600V	DO-201AD	Active
1N5406GP-TP	Micro Commercial Co	600	3	1.1 @ 3A	Standard Recovery >500ns	—	5 @ 600V	DO-201AD	Active
1N5406RLG	onsemi	600	3	1 @ 3A	Standard Recovery >500ns	—	10 @ 600V	DO-201AD	Not For New Designs
EGP30J	onsemi	600	3	1.7 @ 3A	Fast Recovery ≤ 500ns	75	5 @ 600V	DO-201AD	Not For New Designs
FR305GP-AP	Micro Commercial Co	600	3	1.3 @ 3A	Fast Recovery ≤ 500ns	250	5 @ 600V	DO-201AD	Active
FR305GP-TP	Micro Commercial Co	600	3	1.3 @ 3A	Fast Recovery ≤ 500ns	250	5 @ 600V	DO-201AD	Active
HER306G-AP	Micro Commercial Co	600	3	1.7 @ 3A	Fast Recovery ≤ 500ns	75	10 @ 600V	DO-201AD	Active

Engineering Selection Recommendations

For New Designs:

Select from parts with Active product status. The 1N5406 series (1N5406-G, 1N5406G, 1N5406GP-AP, 1N5406GP-TP) provides standard recovery characteristics with forward voltage ratings of 1.0 to 1.1 V at 3 A. These parts are suitable for applications where switching speed is not critical and lower forward voltage drop is beneficial.

For applications requiring fast recovery characteristics, FR305GP-AP and FR305GP-TP offer 250 ns reverse recovery time with 1.3 V forward voltage at 3 A. HER306G-AP provides 75 ns reverse recovery time with 1.7 V forward voltage at 3 A.

For Existing Production (Replacement of Obsolete GI856-E3/73):

The GI856-E3/73 exhibits fast recovery characteristics (200 ns trr) and 1.25 V forward voltage. Direct functional replacement requires either:

1N5406 series (standard recovery) if circuit timing is not dependent on fast recovery characteristics
FR305GP-AP or FR305GP-TP (fast recovery, 250 ns) for closest performance match
HER306G-AP (fast recovery, 75 ns) for enhanced switching performance

All recommended substitutes are ROHS3 compliant and rated for -55°C to 150°C or wider operating temperature ranges, meeting the GI856-E3/73 temperature specification of -50°C to 150°C.

Packaging Considerations:

1N5406-G: Tape & Box (TB) packaging
1N5406G: Cut Tape (CT) packaging
1N5406GP-AP: Tape & Box (TB) packaging
1N5406GP-TP: Tape & Reel (TR) packaging
FR305GP-AP: Unspecified packaging
FR305GP-TP: Cut Tape (CT) packaging
HER306G-AP: Unspecified packaging

Select packaging variant based on procurement and assembly requirements.

Frequently Asked Questions (FAQ)

Q: Can the 1N5406 series directly replace the GI856-E3/73?

A: The 1N5406 series matches the 600 V / 3 A electrical ratings and DO-201AD package. However, 1N5406 parts use standard recovery (>500 ns) while the GI856-E3/73 uses fast recovery (200 ns). In circuits where switching speed is not critical, 1N5406 parts provide direct substitution. In circuits dependent on fast recovery characteristics, FR305GP or HER306G-AP are more appropriate.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to reverse recovery time (trr), the time required for a diode to stop conducting when reverse bias is applied. Fast recovery diodes (≤500 ns) switch off more quickly, reducing switching losses and enabling higher frequency operation. Standard recovery diodes (>500 ns) are suitable for lower frequency applications and typically exhibit lower forward voltage drop.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant, matching the compliance status of the GI856-E3/73.

Q: What is the significance of product status (Active vs. Not For New Designs)?

A: Active status indicates the manufacturer continues production and supports the part for new designs. "Not For New Designs" status indicates the manufacturer no longer recommends the part for new applications, though existing inventory may be available. For new designs, select only parts with Active status.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. The GI856-E3/73 specifies 1.25 V at 3 A. Substitute parts range from 1.0 V to 1.7 V at 3 A. Lower Vf reduces power dissipation and heat generation. Higher Vf increases power dissipation. Select based on circuit power budget and thermal management requirements.

Q: Can I use the 60S6-TP (6 A rated) as a substitute for the 3 A GI856-E3/73?

A: The 60S6-TP is rated for 6 A average rectified current, exceeding the 3 A requirement. While electrically compatible at 600 V, the 6 A part is oversized for 3 A applications. Use only if circuit design specifically requires 6 A capability or if 3 A parts are unavailable.

Q: What packaging options are available for the 1N5406 base part number?

A: The 1N5406 base part is available in multiple packaging variants: 1N5406-G (Tape & Box), 1N5406G (Cut Tape), 1N5406GP-AP (Tape & Box), and 1N5406GP-TP (Tape & Reel). Select based on procurement method and assembly equipment compatibility.

Q: Are reverse leakage current differences significant?

A: The GI856-E3/73 specifies 10 µA reverse leakage at 600 V. Most substitute parts specify 5 µA, representing lower leakage. Lower leakage reduces standby current and improves circuit efficiency. Higher leakage (10 µA) is acceptable in most applications but may impact low-power standby performance.

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