GF1D Equivalent & Substitute Parts

Part Overview

The GF1D is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as Not For New Designs, indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for ongoing production support, maintenance applications, and design continuity where legacy component specifications remain applicable.

Substiute Parts

GF1D
onsemiIn Stock: 18474GF1D Datasheet
GF1D
Current Part
ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
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RS1D
Taiwan Semiconductor CorporationIn Stock: 20226RS1D Datasheet
RS1D
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S1D
YAGEOIn Stock: 6087S1D Datasheet
S1D
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CGRA4003-G
Comchip TechnologyIn Stock: 989CGRA4003-G Datasheet
CGRA4003-G
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CMR1-02M BK PBFREE
Central Semiconductor CorpIn Stock: 864CMR1-02M BK PBFREE Datasheet
CMR1-02M BK PBFREE
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CMR1-02M TR13 PBFREE
Central Semiconductor CorpIn Stock: 54016CMR1-02M TR13 PBFREE Datasheet
CMR1-02M TR13 PBFREE
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CURA103-G
Comchip TechnologyIn Stock: 28976CURA103-G Datasheet
CURA103-G
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ES1D R3G
Taiwan Semiconductor CorporationIn Stock: 860ES1D R3G Datasheet
ES1D R3G
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ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
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ES1D-LTP
Micro Commercial CoIn Stock: 335351ES1D-LTP Datasheet
ES1D-LTP
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ES1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 24818ES1DHE3_A/H Datasheet
ES1DHE3_A/H
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ESH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 9509ESH1DHE3_A/H Datasheet
ESH1DHE3_A/H
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ESH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7842ESH1DHE3_A/I Datasheet
ESH1DHE3_A/I
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FS1DE-TP
Micro Commercial CoIn Stock: 918FS1DE-TP Datasheet
FS1DE-TP
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GS1D_R1_00001
Panjit International Inc.In Stock: 2208GS1D_R1_00001 Datasheet
GS1D_R1_00001
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MURS1D-TP
Micro Commercial CoIn Stock: 1050MURS1D-TP Datasheet
MURS1D-TP
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RGF1D-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15215RGF1D-E3/5CA Datasheet
RGF1D-E3/5CA
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RS1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1137RS1D-M3/5AT Datasheet
RS1D-M3/5AT
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RS1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1450RS1D-M3/61T Datasheet
RS1D-M3/61T
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RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
RS1DHE3_A/H
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RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
RS1DHE3_A/I
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S1D-13-F
Diodes IncorporatedIn Stock: 300326S1D-13-F Datasheet
S1D-13-F
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S1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1035S1D-M3/5AT Datasheet
S1D-M3/5AT
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S1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12778S1D-M3/61T Datasheet
S1D-M3/61T
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S1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2957S1DHE3_A/H Datasheet
S1DHE3_A/H
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S1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 6250S1DHE3_A/I Datasheet
S1DHE3_A/I
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STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
STTH102A
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STTH102AY
STMicroelectronicsIn Stock: 31268STTH102AY Datasheet
STTH102AY
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STTH1R02A
STMicroelectronicsIn Stock: 1738STTH1R02A Datasheet
STTH1R02A
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STTH2R02A
STMicroelectronicsIn Stock: 116772STTH2R02A Datasheet
STTH2R02A
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U1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14293U1D-M3/5AT Datasheet
U1D-M3/5AT
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U1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188U1D-M3/61T Datasheet
U1D-M3/61T
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US1D-13-F
Diodes IncorporatedIn Stock: 155307US1D-13-F Datasheet
US1D-13-F
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US1D-TP
Micro Commercial CoIn Stock: 3497US1D-TP Datasheet
US1D-TP
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Reverse Recovery Time (trr) 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -65°C ~ 175°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the GF1D is determined by matching the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC or SMA equivalent
  • Mounting Type: Surface Mount

Acceptable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Range 920 mV to 1.3 V @ 1 A
  • Reverse Recovery Time (trr): 25 ns to 2 µs (standard to fast recovery)
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V (consistent across all candidates)
  • Operating Temperature - Junction: Minimum -55°C to -65°C; Maximum 150°C to 175°C
  • RoHS Status: ROHS3 Compliant (required)

Substitute parts must maintain electrical equivalence within these parameter windows while preserving package compatibility and regulatory compliance. Parts with active product status are preferred for new procurement; discontinued parts are listed for reference only.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [V] trr [ns] Tj Range [°C] Product Status Package
GF1D onsemi 200 1 1.0 2000 -65 ~ 175 Not For New Designs DO-214AC (SMA)
ES1D EVVO Semi 200 1 1.0 35 -55 ~ 150 Active DO-214AC (SMA)
RS1D Taiwan Semiconductor Corporation 200 1 1.3 150 -55 ~ 150 Active DO-214AC (SMA)
S1D YAGEO 200 1 1.1 Active DO-214AC (SMA)
CGRA4003-G Comchip Technology 200 1 1.1 -55 ~ 150 Active DO-214AC (SMA)
CMR1-02M BK PBFREE Central Semiconductor Corp 200 1 1.1 -65 ~ 150 Active DO-214AC (SMA)
CMR1-02M TR13 PBFREE Central Semiconductor Corp 200 1 1.1 -65 ~ 150 Active DO-214AC (SMA)
CURA103-G Comchip Technology 200 1 1.0 50 Active DO-214AC (SMA)
ES1D R3G Taiwan Semiconductor Corporation 200 1 0.95 35 -55 ~ 150 Discontinued at DiGi Electronics DO-214AC (SMA)
ES1D-13-F Diodes Incorporated 200 1 0.92 25 -55 ~ 150 Active DO-214AC (SMA)
ES1D-LTP Micro Commercial Co 200 1 0.95 35 -65 ~ 175 Active DO-214AC (SMA)

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compliance):

ES1D-LTP (Micro Commercial Co) and CMR1-02M TR13 PBFREE (Central Semiconductor Corp) are the preferred substitutes. Both maintain the full operating temperature range of the original GF1D (-65°C to 175°C or -65°C to 150°C respectively), ensuring compatibility in extended temperature applications. Both are ROHS3 compliant and carry active product status with substantial inventory availability.

ES1D-13-F (Diodes Incorporated) offers the lowest forward voltage drop (920 mV @ 1 A) and fastest recovery time (25 ns), providing improved efficiency characteristics while maintaining full electrical equivalence. This part is actively produced with high inventory levels.

Secondary Substitutes (Active Status, Reduced Temperature Range):

ES1D (EVVO Semi), RS1D (Taiwan Semiconductor Corporation), CGRA4003-G (Comchip Technology), and CURA103-G (Comchip Technology) are electrically equivalent but operate within a reduced temperature range (-55°C to 150°C). These parts are suitable for applications not requiring the extended low-temperature performance of the original GF1D.

Discontinued Reference:

ES1D R3G (Taiwan Semiconductor Corporation) is listed as discontinued at DiGi Electronics and should not be selected for new procurement despite electrical equivalence.

Packaging Considerations:

All substitute parts are available in DO-214AC (SMA) surface mount package. Packaging format variations (Cut Tape, Tape & Reel, Bulk) do not affect electrical or mechanical compatibility; selection depends on procurement and assembly requirements.

Frequently Asked Questions (FAQ)

Q: Can ES1D-LTP directly replace GF1D in all applications?

A: ES1D-LTP meets all mandatory electrical parameters (200 V, 1 A, DO-214AC package) and maintains the full operating temperature range (-65°C to 175°C). Direct substitution is valid for applications operating within these specifications.

Q: What is the difference between standard recovery and fast recovery diodes in this comparison?

A: The GF1D exhibits standard recovery characteristics with a reverse recovery time (trr) of 2 µs. Substitute parts with fast recovery (trr ≤ 500 ns) such as ES1D-13-F (25 ns) and CURA103-G (50 ns) switch faster, reducing switching losses and electromagnetic interference. Fast recovery diodes are backward compatible with standard recovery applications.

Q: Are there compatibility issues between Cut Tape and Tape & Reel packaging formats?

A: Packaging format (Cut Tape, Tape & Reel, Bulk) affects procurement and assembly logistics only. Electrical and mechanical specifications remain identical. Component selection should be based on manufacturing process requirements, not electrical performance.

Q: Why do some substitute parts have a maximum operating temperature of 150°C instead of 175°C?

A: Operating temperature range is a design specification set by each manufacturer. Parts rated to 150°C are suitable for applications with maximum junction temperatures up to 150°C. Applications requiring operation above 150°C must use parts with higher temperature ratings, such as ES1D-LTP or CMR1-02M variants.

Q: Is forward voltage drop (Vf) variation significant for substitution?

A: Forward voltage drop varies from 920 mV to 1.3 V across the substitute parts. In low-power applications, this variation has minimal impact. In high-current or thermally sensitive circuits, lower Vf values (ES1D-13-F at 920 mV) reduce power dissipation and heat generation. Circuit analysis determines whether Vf variation is acceptable.

Q: What does ROHS3 compliance mean for component selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All listed substitute parts are ROHS3 compliant, ensuring regulatory equivalence with the original GF1D.

Q: Can I use a substitute part with a lower reverse recovery time in a legacy design?

A: Yes. Faster recovery times (lower trr values) are backward compatible with designs specified for slower recovery. Fast recovery diodes reduce switching losses and are suitable for retrofit applications without circuit modification.

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