GF1B Equivalent & Substitute Parts

Part Overview

The GF1B is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary for ongoing production support, maintenance applications, and design continuity where the GF1B specification remains applicable.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 1 A
Reverse Recovery Time (trr)	2	µs
Current - Reverse Leakage @ Vr	5	µA @ 100 V
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-65 to 175	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the GF1B is determined by the following critical parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-214AC (SMA) or compatible surface mount package
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Allowable Variation Parameters:

Voltage - Forward (Vf) (Max) @ If: 0.9 V to 1.1 V @ 1 A (GF1B specifies 1 V maximum)
Reverse Recovery Time (trr): 25 ns to 2 µs (GF1B specifies 2 µs standard recovery)
Current - Reverse Leakage @ Vr: 1 µA to 5 µA @ 100 V
Operating Temperature - Junction: Minimum -55°C to -65°C; Maximum 150°C to 175°C

Substitute parts meeting these criteria are functionally equivalent for applications requiring 100 V, 1 A general-purpose rectification in surface mount form factor. Parts with faster recovery characteristics (≤500 ns) or lower forward voltage drop represent performance improvements over the GF1B's standard recovery specification.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	trr [ns/µs]	Ir @ Vr [µA]	Package	Product Status	Temp Range [°C]
GF1B	onsemi	100	1	1.0	2 µs	5	DO-214AC	Not For New Designs	-65 to 175
S1B	YAGEO	100	1.1	1.1	—	—	DO-214AC	Active	—
CGRA4002-G	Comchip Technology	100	1	1.1	≤500 ns	5	DO-214AC	Active	-55 to 150
CSFA102-G	Comchip Technology	100	1	0.95	35 ns	5	DO-214AC	Active	—
ES1B-E3/5AT	Vishay General Semiconductor - Diodes Division	100	1	0.92	25 ns	5	DO-214AC	Active	-55 to 150
ES1B-LTP	Micro Commercial Co	100	1	0.95	35 ns	5	DO-214AC	Not For New Designs	-65 to 175
ESH1B-E3/5AT	Vishay General Semiconductor - Diodes Division	100	1	0.90	25 ns	1	DO-214AC	Active	-55 to 175
ESH1B-E3/61T	Vishay General Semiconductor - Diodes Division	100	1	0.90	25 ns	1	DO-214AC	Active	-55 to 175
ESH1BHE3_A/H	Vishay General Semiconductor - Diodes Division	100	1	0.90	25 ns	1	DO-214AC	Active	-55 to 175
ESH1BHE3_A/I	Vishay General Semiconductor - Diodes Division	100	1	0.90	25 ns	1	DO-214AC	Active	-55 to 175
GF1B-E3/67A	Vishay General Semiconductor - Diodes Division	100	1	1.1	2 µs	5	DO-214BA	Not For New Designs	-65 to 175

Engineering Selection Recommendations

For Active Product Status Requirement:

If procurement specifications mandate active product status, the following parts are suitable substitutes:

ES1B-E3/5AT (Vishay): Active status, 100 V / 1 A, fast recovery (25 ns), forward voltage 0.92 V @ 1 A, operating range -55°C to 150°C
ESH1B-E3/5AT (Vishay): Active status, 100 V / 1 A, fast recovery (25 ns), forward voltage 0.90 V @ 1 A, lower reverse leakage (1 µA), operating range -55°C to 175°C
ESH1B-E3/61T (Vishay): Active status, identical electrical specifications to ESH1B-E3/5AT
ESH1BHE3_A/H (Vishay): Active status with AEC-Q101 automotive qualification, 100 V / 1 A, fast recovery (25 ns), forward voltage 0.90 V @ 1 A, operating range -55°C to 175°C
ESH1BHE3_A/I (Vishay): Active status with AEC-Q101 automotive qualification, identical specifications to ESH1BHE3_A/H
CGRA4002-G (Comchip Technology): Active status, 100 V / 1 A, fast recovery (≤500 ns), forward voltage 1.1 V @ 1 A, operating range -55°C to 150°C
CSFA102-G (Comchip Technology): Active status, 100 V / 1 A, fast recovery (35 ns), forward voltage 0.95 V @ 1 A
S1B (YAGEO): Active status, 100 V / 1.1 A, forward voltage 1.1 V @ 1 A

For Extended Temperature Range Requirement (-65°C to 175°C):

If the application requires the full temperature range of the GF1B (-65°C to 175°C), the following parts maintain this specification:

ES1B-LTP (Micro Commercial Co): Not For New Designs status, but provides -65°C to 175°C range with fast recovery (35 ns)
ESH1B-E3/5AT (Vishay): Active status, -55°C to 175°C (minimum temperature -55°C vs. GF1B -65°C)
ESH1B-E3/61T (Vishay): Active status, -55°C to 175°C
ESH1BHE3_A/H (Vishay): Active status with automotive qualification, -55°C to 175°C
ESH1BHE3_A/I (Vishay): Active status with automotive qualification, -55°C to 175°C

For Automotive Applications:

If the application requires automotive-grade components with AEC-Q101 qualification:

ESH1BHE3_A/H (Vishay): AEC-Q101 qualified, 100 V / 1 A, fast recovery (25 ns), forward voltage 0.90 V @ 1 A, operating range -55°C to 175°C
ESH1BHE3_A/I (Vishay): AEC-Q101 qualified, identical specifications to ESH1BHE3_A/H

For Performance Improvement (Lower Forward Voltage Drop):

Parts offering reduced forward voltage compared to GF1B (1.0 V):

ESH1B-E3/5AT: 0.90 V @ 1 A
ESH1B-E3/61T: 0.90 V @ 1 A
ESH1BHE3_A/H: 0.90 V @ 1 A
ESH1BHE3_A/I: 0.90 V @ 1 A
CSFA102-G: 0.95 V @ 1 A
ES1B-E3/5AT: 0.92 V @ 1 A

For Performance Improvement (Faster Recovery):

Parts offering faster reverse recovery time compared to GF1B (2 µs standard recovery):

ESH1B-E3/5AT: 25 ns
ESH1B-E3/61T: 25 ns
ESH1BHE3_A/H: 25 ns
ESH1BHE3_A/I: 25 ns
CSFA102-G: 35 ns
ES1B-E3/5AT: 25 ns
ES1B-LTP: 35 ns
CGRA4002-G: ≤500 ns

Frequently Asked Questions (FAQ)

Q: Can I directly replace GF1B with any of these substitute parts?

A: Direct replacement is possible only if the substitute part meets the mandatory parameters: 100 V reverse voltage rating, 1 A average rectified current, DO-214AC (SMA) surface mount package, ROHS3 compliance, and MSL 1 rating. All listed parts satisfy these criteria. However, verify that the application tolerates variations in forward voltage drop, reverse recovery time, and reverse leakage current within the ranges specified in the parameter comparison table.

Q: What is the difference between DO-214AC and DO-214BA packages?

A: Both are surface mount packages for single diodes, but they have different physical dimensions and pin configurations. The GF1B uses DO-214AC (SMA). The GF1B-E3/67A uses DO-214BA (GF1), which is not directly interchangeable without PCB layout modification. Ensure package compatibility before substitution.

Q: Why do some substitute parts have lower forward voltage drop than the GF1B?

A: Forward voltage drop depends on the diode's internal semiconductor structure and doping profile. Parts with lower forward voltage (0.90 V to 0.95 V vs. GF1B's 1.0 V) typically use optimized silicon junctions or different manufacturing processes. Lower forward voltage reduces power dissipation and heat generation, which is beneficial in most applications. Verify that the application circuit does not depend on the GF1B's specific forward voltage characteristic.

Q: What does "Not For New Designs" status mean?

A: This designation indicates that the manufacturer has discontinued active development and recommends against using the part in new product designs. The GF1B and ES1B-LTP carry this status. For new designs, select from parts with "Active" status. For legacy product support or maintenance, "Not For New Designs" parts remain available if inventory exists.

Q: Are the ESH1BHE3_A/H and ESH1BHE3_A/I parts interchangeable?

A: Yes. Both parts have identical electrical specifications (100 V, 1 A, 0.90 V forward voltage, 25 ns recovery time, 1 µA reverse leakage) and operating temperature range (-55°C to 175°C). Both carry AEC-Q101 automotive qualification. The designations _A/H and _A/I likely indicate different manufacturing lots or qualification batches. Consult the manufacturer datasheet for any specific differences in qualification or traceability requirements.

Q: Can I use a substitute part with faster recovery time (25 ns) in place of the GF1B (2 µs)?

A: Yes. Faster recovery time is a performance improvement that reduces switching losses and electromagnetic interference. The application will function correctly with faster recovery diodes. However, in circuits with specific timing dependencies or where the slower recovery characteristic is intentional, verify that the faster recovery does not introduce unwanted high-frequency oscillations or noise.

Q: What is the significance of reverse leakage current (Ir)?

A: Reverse leakage current is the small current that flows through the diode when reverse-biased. The GF1B specifies 5 µA @ 100 V. Some substitutes (ESH1B series) specify 1 µA, which is lower and represents better reverse blocking performance. In most applications, this difference is negligible. In high-impedance circuits or precision analog applications, lower reverse leakage may be advantageous.

Q: Why is the operating temperature range important for substitution?

A: The operating temperature range defines the junction temperature limits within which the diode maintains its electrical specifications. The GF1B operates from -65°C to 175°C. Some substitutes (ES1B-E3/5AT, CGRA4002-G) operate from -55°C to 150°C, which is narrower. If the application requires operation at -65°C or above 150°C, select a substitute with a matching or wider temperature range.

Q: What does RoHS3 compliance mean?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the component does not contain restricted substances such as lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers above specified thresholds. All listed substitute parts are RoHS3 compliant, ensuring environmental and regulatory compliance.

Q: Can I use the S1B (YAGEO) as a substitute if my application requires exactly 1 A?

A: The S1B is rated for 1.1 A average rectified current, which exceeds the GF1B's 1 A rating. This is acceptable for applications requiring 1 A, as the part has higher current capacity. However, verify that the forward voltage specification (1.1 V @ 1 A for S1B vs. 1.0 V for GF1B) does not affect circuit performance, particularly in voltage-sensitive applications.

Q: Are there any compliance or certification differences between the substitute parts?

A: Yes. The ESH1BHE3_A/H and ESH1BHE3_A/I parts carry AEC-Q101 automotive qualification, making them suitable for automotive applications. The GF1B and most other substitutes do not list automotive qualification. If the application is automotive, select ESH1BHE3_A/H or ESH1BHE3_A/I. All listed parts are ROHS3 compliant and REACH unaffected.

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