GD25VQ80CEIGR Equivalent & Substitute Parts

Part Overview

The GD25VQ80CEIGR is a FLASH - NOR Memory IC with 8Mbit capacity, SPI - Quad I/O interface, and 104 MHz clock frequency in an 8-USON (2x3) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

GD25VQ80CEIGR

GigaDevice Semiconductor (HK) LimitedIn Stock: 820GD25VQ80CEIGR Datasheet

Current PartRFQ

GD25WD80CEIGR

GigaDevice Semiconductor (HK) LimitedIn Stock: 39252GD25WD80CEIGR Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the GD25VQ80CEIGR is determined by the following critical parameters:

• Memory Capacity & Organization: 8Mbit, 1M x 8 configuration
• Interface Protocol: SPI - Quad I/O
• Package Footprint: 8-XFDFN Exposed Pad (8-USON 2x3)
• Mounting Technology: Surface Mount
• Operating Temperature Range: -40°C ~ 85°C
• Compliance Standards: ROHS3, REACH Unaffected

The GD25WD80CEIGR meets all these criteria and is classified as a direct substitute. Voltage supply range differences do not preclude substitution when the main part's voltage specification (2.3V ~ 3.6V) falls within the substitute's range (1.65V ~ 3.6V).

Parameter Comparison

Engineering Selection Recommendations

The GD25WD80CEIGR is the designated substitute for the discontinued GD25VQ80CEIGR. Both parts are manufactured by GigaDevice Semiconductor (HK) Limited and share identical memory specifications, interface protocols, package footprints, and compliance certifications. The substitute maintains ROHS3 compliance and REACH unaffected status. The GD25WD80CEIGR is currently in active production with substantial inventory availability (39,186 Pcs), ensuring supply chain continuity. The extended voltage supply range of the substitute (1.65V ~ 3.6V) provides additional operational flexibility compared to the original part (2.3V ~ 3.6V).

Frequently Asked Questions (FAQ)

Q: Can GD25WD80CEIGR be used as a direct replacement for GD25VQ80CEIGR in existing designs?

A: Yes. Both parts share identical memory capacity (8Mbit), organization (1M x 8), interface (SPI - Quad I/O), package footprint (8-XFDFN Exposed Pad, 8-USON 2x3), and operating temperature range (-40°C ~ 85°C). Pin-to-pin compatibility and functional equivalence are confirmed.

Q: Are there differences in write cycle timing between these parts?

A: The GD25VQ80CEIGR specifies write cycle times (Word: 50µs, Page: 3ms). The GD25WD80CEIGR does not provide this specification in the available data. Consult the respective datasheets for detailed timing parameters if critical to your application.

Q: Does the voltage supply range difference affect substitution?

A: No. The GD25VQ80CEIGR operates at 2.3V ~ 3.6V, while the GD25WD80CEIGR operates at 1.65V ~ 3.6V. The original part's voltage specification is fully contained within the substitute's range, ensuring compatibility in all existing supply configurations.

Q: Are both parts RoHS compliant?

A: Yes. Both GD25VQ80CEIGR and GD25WD80CEIGR are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the packaging difference between these parts?

A: The GD25VQ80CEIGR is supplied in bulk packaging, while the GD25WD80CEIGR is supplied in Tape & Reel (TR) format. Both use identical 8-USON (2x3) surface mount packages with 8-XFDFN Exposed Pad configuration. Tape & Reel packaging is standard for automated assembly processes.