G630J MOSFET N-Channel 200V 9A TO-251 Equivalent & Substitute Parts

Part Overview

The G630J is an N-Channel MOSFET manufactured by Goford Semiconductor, designed for applications requiring 200V drain-to-source voltage capability with 9A continuous drain current. This device operates in the TrenchFET® series and is housed in a TO-251 through-hole package. The part is currently in active production status with 622 units available in new original stock. Substitute parts are identified when electrical parameters, mechanical packaging, and operational characteristics align within specified tolerances, enabling direct replacement in circuit designs without functional degradation.

Substiute Parts

G630J

Goford SemiconductorIn Stock: 672G630J Datasheet

Current PartRFQ

G630J

Goford SemiconductorIn Stock: 1829G630J Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the G630J is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): 200V minimum
• Continuous Drain Current (Id) @ 25°C: 9A minimum
• On-State Resistance (Rds On Max): 280mOhm maximum @ specified gate drive conditions
• Gate-Source Threshold Voltage (Vgs(th)): 3V maximum @ 250µA
• Maximum Gate-Source Voltage (Vgs): ±20V minimum
• Power Dissipation Capability: 83W (Tc) minimum
• Operating Temperature Range: -55°C to 150°C (TJ) minimum

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Functional Equivalence Criteria:

• Series Classification: TrenchFET®
• FET Feature: Standard

Parts meeting all electrical, mechanical, and functional criteria are classified as parametric equivalents and direct substitutes.

Parameter Comparison

Engineering Selection Recommendations

The G630J substitute part (also designated G630J from Goford Semiconductor) provides complete electrical and mechanical equivalence to the main part specification. Both parts are classified as Active products with identical core performance parameters across voltage, current, thermal, and switching characteristics.

Compliance Considerations:

The substitute part offers improved regulatory compliance status. The main part carries RoHS non-compliant designation with vendor-undefined REACH status. The substitute part is ROHS3 Compliant and carries REACH Unaffected status, making it suitable for applications subject to environmental and regulatory requirements in jurisdictions enforcing these standards.

Availability and Packaging:

The substitute part is available in higher quantity (1796 units versus 622 units) and is specified in Tube packaging format, which may provide advantages for automated assembly processes or bulk procurement scenarios.

Functional Compatibility:

Both parts operate identically within the specified electrical envelope. The substitute part provides additional parametric data (Gate Charge and Input Capacitance) that may be useful for detailed circuit simulation and design optimization, though this information is supplementary to the core substitution criteria.

Selection Basis:

Selection between the main part and substitute should be based on:

1. Regulatory compliance requirements of the end application
2. Inventory availability and procurement lead time
3. Packaging format compatibility with assembly processes
4. ECCN classification requirements (both parts: EAR99)

Frequently Asked Questions (FAQ)

Q: Can the G630J substitute part be used as a direct replacement for the main G630J part?

A: Yes. Both parts are identical in all critical electrical parameters (Vdss, Id, Rds On, Vgs(th), power dissipation, and operating temperature range) and share the same mechanical package (TO-251-3 Short Leads, IPak, TO-251AA). Direct pin-for-pin substitution is supported without circuit modification.

Q: What are the key electrical parameters that define substitution eligibility for this MOSFET?

A: Substitution is determined by equivalence in: Drain-to-Source Voltage (200V), Continuous Drain Current (9A @ 25°C), On-State Resistance (280mOhm maximum @ 4.5A, 10V), Gate-Source Threshold Voltage (3V maximum @ 250µA), Maximum Gate-Source Voltage (±20V), Power Dissipation (83W Tc), and Operating Temperature Range (-55°C to 150°C TJ).

Q: Are there mechanical package differences between the main part and substitute?

A: No. Both parts use the TO-251-3 Short Leads package (also designated IPak or TO-251AA) with through-hole mounting. The substitute specifies Tube packaging format for distribution, which does not affect the component package itself.

Q: What is the difference in RoHS compliance between the main part and substitute?

A: The main part is designated RoHS non-compliant with vendor-undefined REACH status. The substitute part is ROHS3 Compliant and carries REACH Unaffected status. Applications subject to RoHS or REACH regulations should use the substitute part.

Q: Does the substitute part provide additional technical data?

A: Yes. The substitute part includes Gate Charge (Qg) specification of 11.8 nC @ 10V and Input Capacitance (Ciss) specification of 509 pF @ 25V. These parameters are not specified for the main part but are useful for detailed circuit analysis and switching behavior characterization.

Q: What inventory considerations apply to these parts?

A: The main part has 622 units in stock. The substitute part has 1796 units in stock, providing greater availability for high-volume procurement or extended lead-time applications.

Q: Are both parts classified as Active products?

A: Yes. Both the main part and substitute are Active products from Goford Semiconductor, indicating ongoing production support and availability.

Q: What is the ECCN classification for these parts?

A: Both parts carry ECCN classification EAR99, indicating standard commercial electronic components with no specific export control restrictions.