G2003A Equivalent & Substitute Parts Reference

Part Overview

The Goford Semiconductor G2003A is an N-Channel MOSFET in the TrenchFET® series, featuring a maximum drain-source voltage of 190V and a continuous drain current of 3A (Tc). Packaged in a SOT-23-3L outline, it is intended for surface mount assembly. The part remains Active but does not comply with RoHS directives. Engineers may require equivalent or substitute MOSFETs to address compliance requirements, maintain inventory, or ensure supply chain continuity.

Key Parameters

Manufacturer Part Number	Manufacturer	Category	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Product Status
G2003A	Goford Semiconductor	Transistors, FETs, MOSFETs	190V	3A (Tc)	4.5V, 10V	540mOhm @ 2A, 10V	3V @ 250µA	±20V	Standard	1.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3	RoHS non-compliant	Active

Substitute Part Grouping Explanation

MOSFET substitute selection in this category requires precise matching of the following parameters: Drain to Source Voltage (Vdss), Continuous Drain Current (Id), Drive Voltage (gate threshold and on-state drive), Maximum Rds On at rated current and voltage, Gate Threshold Voltage (Vgs(th)), Maximum Gate-Source Voltage (Vgs Max), FET Feature, Power Dissipation, Operating Temperature Range, Mounting Type, Package outline, and RoHS Status. Only devices strictly matching these criteria are included as substitutes.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Category	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	Product Status
G2003A	Goford Semiconductor	Transistors, FETs, MOSFETs	190V	3A (Tc)	4.5V, 10V	540mOhm @ 2A, 10V	3V @ 250µA	±20V	Standard	1.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3	RoHS non-compliant	Active
G2003A	Goford Semiconductor	Transistors, FETs, MOSFETs	190V	3A (Tc)	4.5V, 10V	540mOhm @ 2A, 10V	3V @ 250µA	±20V	Standard	1.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	Active

Engineering Selection Recommendations

When selecting between G2003A product variants, determine RoHS and REACH compliance requirements for the target application. Both main and substitute G2003A devices are in Active status and provide the same electrical and package configurations. If RoHS compliance is mandated, the G2003A (ROHS3 Compliant) is suitable.

Frequently Asked Questions (FAQ)

Q: What are the primary criteria for substituting MOSFET parts in this category?
A: Key substitution criteria include Drain to Source Voltage, Continuous Drain Current at 25°C, Rds On, Gate Threshold Voltage, Maximum Gate-Source Voltage, Power Dissipation, Mounting Type, Package, and compliance status.

Q: Are the G2003A alternatives mechanically compatible?
A: Both parts use the SOT-23-3 (TO-236-3, SC-59, SOT-23-3) surface mount package.

Q: What is the difference between RoHS non-compliant and ROHS3 Compliant variants of G2003A?
A: RoHS non-compliant variants contain restricted substances above allowable limits, whereas ROHS3 Compliant variants conform to RoHS directive requirements.

Q: Does the supplier device package affect direct substitution?
A: Both main and substitute versions are supplied in SOT-23-3, ensuring mechanical equivalence.

Q: Are there any performance differences between main and substitute G2003A parts?
A: All key electrical and mechanical parameters provided are identical between the listed main and substitute G2003A parts.

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