Equivalent & Substitute Parts for G1K1P06LL

Part Overview

G1K1P06LL is a P-Channel TrenchFET® MOSFET from Goford Semiconductor, designed for use in surface-mount applications requiring up to 3A continuous drain current at a maximum drain-source voltage of 60V. The device features a maximum Rds(on) of 110mOhm at 2A, 10V, and accommodates a range of drive voltages and gate threshold values. The product status is Active. Sourcing equivalent or substitute models is essential for design flexibility, inventory management, and compliance requirements, particularly when packaging format (Tape & Reel) or RoHS status is critical.

Substiute Parts

G1K1P06LL
Goford SemiconductorIn Stock: 860G1K1P06LL Datasheet
G1K1P06LL
Current Part
G1K1P06LL
Goford SemiconductorIn Stock: 3119G1K1P06LL Datasheet
G1K1P06LL
Parametric Equivalent

Key Parameters

ParameterMain Part (G1K1P06LL)
CategoryTransistors, FETs, MOSFETs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs110mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
FET FeatureStandard
Power Dissipation (Max)1.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6L
Package / CaseSOT-23-6
RoHS StatusRoHS non-compliant
Product StatusActive

Substitute Part Grouping Explanation

Substitution logic relies exclusively on matching these key electrical and mechanical parameters: device category, FET type, technology, drain-source voltage rating, continuous drain current, drive voltage, Rds(on) at specified conditions, gate threshold voltage, maximum gate-source voltage, FET feature, power dissipation rating, operating temperature range, mounting type, package format, and product status. RoHS status and packaging (Tape & Reel availability) are included as selection criteria for compliance and supply chain requirements.

Parameter Comparison

Parameter Main Part (G1K1P06LL) Parametric Equivalent (G1K1P06LL Tape & Reel)
ManufacturerGoford SemiconductorGoford Semiconductor
CategoryTransistors, FETs, MOSFETsTransistors, FETs, MOSFETs
SeriesTrenchFET®TrenchFET®
Product StatusActiveActive
FET TypeP-ChannelP-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V60 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs110mOhm @ 2A, 10V110mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA
Vgs (Max)±20V±20V
FET FeatureStandardStandard
Power Dissipation (Max)1.5W (Tc)1.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface Mount
Supplier Device PackageSOT-23-6LSOT-23-6L
Package / CaseSOT-23-6SOT-23-6
RoHS StatusRoHS non-compliantRoHS Compliant

Engineering Selection Recommendations

Selection between the main part (G1K1P06LL) and its parametric equivalent (G1K1P06LL Tape & Reel) can be based strictly on RoHS compliance and packaging preferences. Both parts are active, match all electrical and mechanical parameters, and are suitable for surface mount applications in the SOT-23-6L package. RoHS compliant inventory is available in Tape & Reel format, which is appropriate for automated assembly processes and regulatory requirements.

Frequently Asked Questions (FAQ)

Q1: What criteria determine if G1K1P06LL Tape & Reel is a valid substitute for G1K1P06LL?
Substitution is valid when all key electrical parameters (Vdss, Id, Rds(on), Vgs(th), power dissipation), device type, technology, mounting type, and package are identical.

Q2: Is package compatibility ensured between G1K1P06LL and its parametric equivalents?
Yes. Both utilize the SOT-23-6L surface mount package, supporting direct interchangeability in PCB layouts.

Q3: Can RoHS compliance affect selection between these parts?
Yes. RoHS compliance is a critical factor for markets requiring environmental regulatory adherence. G1K1P06LL Tape & Reel is RoHS compliant; the main G1K1P06LL is not.

Q4: Does product status influence substitute selection?
Only active parts are considered valid substitutes. Both listed components are active per provided data.

Q5: Is parametric equivalence based on additional features or specifications?
No. Only explicitly provided parameters are used to define equivalency and substitution suitability within the MOSFET category.

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