Equivalent & Substitute Parts for G13P04S

Part Overview

The G13P04S is a P-Channel 40V MOSFET manufactured by Goford Semiconductor, designed for surface mount applications in the 8-SOP package. This device operates as a TrenchFET® series component with a maximum continuous drain current of 13A at 25°C and a power dissipation rating of 3W. The part is currently in active production status with ROHS3 compliance and REACH unaffected classification. Substitute parts are identified when equivalent electrical and mechanical parameters are required for design flexibility, inventory management, or supply chain continuity.

Substiute Parts

G13P04S

Goford SemiconductorIn Stock: 4786G13P04S Datasheet

Current PartRFQ

G13P04S

Goford SemiconductorIn Stock: 4786G13P04S Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the G13P04S MOSFET are identified based on strict parametric equivalence across the following critical electrical and mechanical criteria:

Electrical Parameters:

• FET Type: P-Channel configuration
• Drain to Source Voltage (Vdss): 40V rating
• Continuous Drain Current (Id): 13A at 25°C
• On-State Resistance (Rds On): 15 mOhm maximum at specified conditions
• Gate Threshold Voltage (Vgs(th)): 2.5V maximum
• Gate Charge (Qg): 40 nC maximum
• Power Dissipation: 3W maximum
• Operating Temperature Range: -55°C to 150°C

Mechanical Parameters:

• Package Type: 8-SOIC surface mount
• Mounting Configuration: Surface Mount
• Supplier Device Package: 8-SOP

Compliance Parameters:

• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected

Substitution is valid only when all electrical parameters remain within the specified tolerances and the mechanical package configuration matches the 8-SOIC form factor.

Parameter Comparison

Engineering Selection Recommendations

The G13P04S P-Channel MOSFET is suitable for applications requiring 40V drain-source voltage capability with 13A continuous current handling in a compact 8-SOIC surface mount package. Selection of equivalent parts should be based on the following engineering criteria:

Product Status Consideration: Both the main part and identified substitutes maintain Active production status, ensuring long-term availability and supply chain stability.

Compliance Verification: All equivalent parts carry ROHS3 compliance certification and REACH unaffected status, meeting regulatory requirements for electronic component deployment in regulated markets.

Parametric Equivalence: Substitute parts must maintain identical electrical specifications across all critical parameters: 40V Vdss rating, 13A continuous drain current, 15 mOhm on-state resistance, and 3W power dissipation. Deviations in any parameter invalidate substitution eligibility.

Package Compatibility: The 8-SOIC (0.154", 3.90mm Width) surface mount package is a fixed requirement. Pin-to-pin compatibility and PCB footprint alignment are guaranteed only when the package designation remains unchanged.

Temperature Performance: The -55°C to 150°C operating temperature range is maintained across all equivalent parts, supporting applications across industrial, automotive, and consumer temperature specifications.

Frequently Asked Questions (FAQ)

Q: What defines a valid substitute for the G13P04S MOSFET?

A: A valid substitute must match all electrical parameters (Vdss, Id, Rds On, Vgs(th), Qg, power dissipation), maintain the same P-Channel FET type, operate across the identical temperature range (-55°C to 150°C), and use the 8-SOIC surface mount package. Compliance certifications (ROHS3, REACH) must also align.

Q: Can the G13P04S be replaced with a different package type?

A: No. The 8-SOIC (0.154", 3.90mm Width) surface mount package is a fixed mechanical requirement. Substitution with alternative package types (such as 8-DIP, 6-SOP, or other configurations) is not valid, as PCB footprint compatibility and thermal characteristics would be compromised.

Q: Are there any electrical parameter tolerances for substitution?

A: Substitution requires exact parametric matching within the specified tolerances provided in the datasheet. The Rds On maximum of 15 mOhm, Vgs(th) maximum of 2.5V, and all other electrical specifications must be met without deviation. Parts exceeding these limits are not acceptable substitutes.

Q: Does the G13P04S substitute maintain the same gate charge characteristics?

A: Yes. The gate charge (Qg) specification of 40 nC maximum at 10V is maintained across all equivalent parts. This parameter directly affects switching speed and driver circuit design, making consistency essential for circuit performance.

Q: What is the significance of the TrenchFET® series designation?

A: TrenchFET® is a Goford Semiconductor technology series identifier indicating the internal FET structure and performance characteristics. Equivalent parts within this series maintain consistent switching behavior, thermal performance, and reliability metrics.

Q: Is the G13P04S suitable for high-temperature applications?

A: Yes. The operating temperature range of -55°C to 150°C (TJ) supports deployment in high-temperature industrial and automotive environments. Thermal management through adequate PCB copper area and heat sinking is required to maintain junction temperature within this range under maximum power dissipation conditions.

Q: How does the 3W power dissipation rating affect circuit design?

A: The 3W maximum power dissipation rating determines the maximum continuous power the device can safely dissipate without exceeding the 150°C junction temperature limit. Circuit designers must calculate actual power dissipation (P = I²Rds On) and ensure adequate thermal management to remain below this limit during normal operation.

Q: Are there any supply chain considerations when selecting substitutes?

A: Both the main part and identified substitutes are in active production with confirmed inventory availability. Selection should prioritize parts with established supply chain presence and consistent lead times to minimize procurement delays.