FZT792ATC Equivalent & Substitute Parts

Part Overview

The FZT792ATC is a PNP bipolar junction transistor manufactured by Diodes Incorporated, rated for 70 V collector-emitter breakdown voltage and 2 A maximum collector current in a surface mount SOT-223-3 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with modified performance parameters within acceptable application ranges.

Substiute Parts

FZT792ATC
Diodes IncorporatedIn Stock: 993FZT792ATC Datasheet
FZT792ATC
Current Part
FZT792ATA
Diodes IncorporatedIn Stock: 48317FZT792ATA Datasheet
FZT792ATA
Parametric Equivalent
BCP52,135
Nexperia USA Inc.In Stock: 12349BCP52,135 Datasheet
BCP52,135
MFR Recommended
BCP52-10,135
Nexperia USA Inc.In Stock: 5749BCP52-10,135 Datasheet
BCP52-10,135
MFR Recommended
BCP52-16,115
Nexperia USA Inc.In Stock: 2192BCP52-16,115 Datasheet
BCP52-16,115
MFR Recommended
BSP31,115
NXP USA Inc.In Stock: 4954BSP31,115 Datasheet
BSP31,115
MFR Recommended
NSS60600MZ4T1G
onsemiIn Stock: 25222NSS60600MZ4T1G Datasheet
NSS60600MZ4T1G
MFR Recommended
NZT660
Fairchild SemiconductorIn Stock: 69153NZT660 Datasheet
NZT660
MFR Recommended
NZT660A
onsemiIn Stock: 20192NZT660A Datasheet
NZT660A
MFR Recommended
NZT751
Fairchild SemiconductorIn Stock: 6548NZT751 Datasheet
NZT751
MFR Recommended
PZT2907A,115
Nexperia USA Inc.In Stock: 6534PZT2907A,115 Datasheet
PZT2907A,115
MFR Recommended
PZT2907A,135
Nexperia USA Inc.In Stock: 8298PZT2907A,135 Datasheet
PZT2907A,135
MFR Recommended
PZT2907AT1G
onsemiIn Stock: 125246PZT2907AT1G Datasheet
PZT2907AT1G
MFR Recommended
PZT2907AT3G
onsemiIn Stock: 24200PZT2907AT3G Datasheet
PZT2907AT3G
MFR Recommended
STN951
STMicroelectronicsIn Stock: 10255STN951 Datasheet
STN951
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 2 A
Collector-Emitter Breakdown Voltage (Max) 70 V
Vce Saturation (Max) 500 mV @ 200mA, 2A
DC Current Gain (hFE Min) 300 @ 10mA, 2V
Power Dissipation (Max) 2 W
Transition Frequency 160 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package SOT-223-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FZT792ATC is determined by the following critical parameters: transistor type (PNP), collector-emitter breakdown voltage, maximum collector current, power dissipation capability, transition frequency, and surface mount package compatibility. Equivalent parts must match all electrical specifications and maintain the same package footprint. Substitute parts may operate at reduced voltage or current ratings, provided the application requirements do not exceed the substitute device specifications. All substitute candidates maintain PNP polarity, SOT-223 package family compatibility, and surface mount mounting type. Compliance certifications (RoHS3, REACH status) and operating temperature range are secondary selection criteria based on application environment and regulatory requirements.

Parameter Comparison

Part Number Manufacturer Ic (Max) A Vce(br) V Power W fT MHz hFE (Min) Package Status
FZT792ATC Diodes Incorporated 2 70 2 160 300 SOT-223-3 Obsolete
FZT792ATA Diodes Incorporated 2 70 2 160 300 SOT-223-3 Active
NZT660A onsemi 3 60 2 75 250 SOT-223-4 Active
NZT660 Fairchild Semiconductor 3 60 2 75 100 SOT-223-4 Active
NZT751 Fairchild Semiconductor 4 60 1.2 75 40 SOT-223-4 Active
BCP52,135 Nexperia USA Inc. 1 60 1 145 63 SOT-223 Active
BCP52-10,135 Nexperia USA Inc. 1 60 1.3 145 63 SOT-223 Active
BCP52-16,115 Nexperia USA Inc. 1 60 1 145 100 SOT-223 Active
BSP31,115 NXP USA Inc. 1 60 1.3 100 100 SOT-223 Active
NSS60600MZ4T1G onsemi 6 60 0.8 100 120 SOT-223 Active
PZT2907A,115 Nexperia USA Inc. 0.6 60 1.15 200 100 SOT-223 Active

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Replacement)

FZT792ATA is the direct parametric equivalent to FZT792ATC, manufactured by Diodes Incorporated with identical electrical specifications (2 A, 70 V, 2 W, 160 MHz, hFE 300). This part is active in production with ROHS3 compliance and unlimited moisture sensitivity rating. Selection of FZT792ATA eliminates design re-qualification requirements and maintains full backward compatibility.

Functional Substitutes (Reduced Voltage Rating)

NZT660A and NZT660 operate at 60 V collector-emitter breakdown voltage (10 V reduction from FZT792ATC) with 3 A maximum collector current and 2 W power dissipation. Both devices maintain surface mount SOT-223 package compatibility and -55°C to 150°C operating temperature range. NZT660A is manufactured by onsemi with active product status and ROHS3 compliance. NZT660 is manufactured by Fairchild Semiconductor with active status. These substitutes are suitable for applications where 60 V voltage rating is acceptable.

Functional Substitutes (Reduced Current Rating)

BCP52 series devices (BCP52,135, BCP52-10,135, BCP52-16,115) and BSP31,115 operate at 1 A maximum collector current with 60 V breakdown voltage. These parts are manufactured by Nexperia USA Inc. and NXP USA Inc., respectively, with active product status and automotive-grade qualifications (AEC-Q100). These substitutes are suitable for applications requiring reduced current handling with maintained voltage rating.

Functional Substitutes (Increased Current Rating)

NSS60600MZ4T1G is manufactured by onsemi with 6 A maximum collector current, 60 V breakdown voltage, and 800 mW power dissipation. This device provides increased current capability at reduced voltage rating and is suitable for high-current, lower-voltage applications.

Functional Substitutes (Reduced Current Rating, Higher Frequency)

PZT2907A,115 is manufactured by Nexperia USA Inc. with 600 mA maximum collector current, 60 V breakdown voltage, and 200 MHz transition frequency. This device provides higher frequency performance at significantly reduced current rating and is suitable for high-frequency, low-current signal applications.

Frequently Asked Questions (FAQ)

Q: Can FZT792ATA directly replace FZT792ATC without circuit modification?

A: Yes. FZT792ATA is a direct parametric equivalent with identical electrical specifications and package footprint. No circuit modification is required.

Q: What is the primary limitation when substituting with NZT660A or NZT660?

A: The collector-emitter breakdown voltage is reduced from 70 V to 60 V. Substitution is valid only if the application maximum supply voltage does not exceed 60 V.

Q: Can BCP52 series devices replace FZT792ATC in all applications?

A: No. BCP52 series devices are limited to 1 A maximum collector current, compared to 2 A for FZT792ATC. Substitution is valid only if the application current requirement does not exceed 1 A.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant. Compliance status is provided in the detailed specifications for each device.

Q: What is the difference between SOT-223-3 and SOT-223-4 packages?

A: SOT-223-3 contains three leads (Base, Collector, Emitter), while SOT-223-4 contains four leads with an additional tab for thermal management. Both packages are mechanically compatible with standard SOT-223 footprints, though SOT-223-4 provides improved thermal performance.

Q: Which substitute offers the best frequency performance?

A: PZT2907A,115 provides 200 MHz transition frequency, exceeding the FZT792ATC specification of 160 MHz. However, this device is limited to 600 mA collector current.

Q: Are automotive-grade qualifications available for substitutes?

A: Yes. BCP52 series devices (BCP52,135, BCP52-10,135, BCP52-16,115) and BSP31,115 carry AEC-Q100 automotive qualification. These devices are suitable for automotive applications requiring grade certification.

Q: What is the operating temperature range for all listed parts?

A: FZT792ATC and most substitutes operate from -55°C to 150°C. PZT2907A,115, BCP52 series, and BSP31,115 specify maximum junction temperature of 150°C without explicit minimum temperature statement in provided data.

Q: Can NSS60600MZ4T1G be used in applications requiring 2 A at 70 V?

A: No. NSS60600MZ4T1G is limited to 60 V breakdown voltage and 800 mW power dissipation. At 2 A collector current, this device would exceed power dissipation limits.

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